Abstract: A gallium nitride (GaN) transistor is provided having a voltage threshold at which the transistor turns ON. The transistor has one or more control electrodes and a gate electrode disposed on a GaN material layer. A bias is applied to the control electrode(s) to prevent shifting of the transistor voltage threshold.

Abstract: This invention pertains to the design of a novel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with multiple metal contacts to a single contiguous p-GaN island. The invention encompasses various embodiments which introduce innovative mechanisms for threshold voltage (Vth) control through hole injection and removal.

Abstract: An enhancement mode gallium nitride (GaN) transistor configured to eliminate holes in the gate material under the gate metal. The transistor has four electrodes, namely a drain electrode, a source electrode, a gate electrode and a hole collector electrode. In a preferred embodiment, a negative voltage is applied to the hole collector electrode, attracting holes in the gate material under the gate metal. The attracted holes recombine with electrons supplied by the negative voltage, thereby substantially eliminating the holes.

Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: A fitting assembly for connection to a flexible duct includes a fitting and a ferrule extending from the fitting. The ferrule includes a first end configured for insertion into an open end of the flexible duct, a second end adjacent to the fitting, and a sidewall extending between the first end and the second end. The sidewall defines a minor diameter adjacent the first end and a major diameter spaced apart from the minor diameter. The ferrule further includes a ferrule thread extending radially outward from the sidewall. The minor diameter is less than or equal to an inner diameter of the flexible duct with the flexible duct fully elongated, and the major diameter is greater than the inner diameter of the flexible duct with the flexible duct fully elongated.

Abstract: A gallium nitride (GaN) transistor which includes a multi-layer/multi-thickness barrier layer formed of segments of progressively increasing thickness between the gate and drain to progressively increase the 2DEG density in the channel from gate to drain. The GaN gate can be formed on the base barrier layer to produce an enhancement mode device with a positive threshold voltage. By forming the gate over a thicker segment of the barrier layer, a GaN transistor with a less positive threshold voltage, or a depletion mode transistor with a negative threshold voltage, can be produced.

Abstract: An enhancement mode gallium nitride (GaN) transistor with a p-type gate configured to eliminate holes accumulating under the gate metal. The gate has two electrodes, a gate electrode and a hole collector electrode. In a preferred embodiment, a negative voltage is applied to the hole collector electrode, attracting holes accumulating under the gate metal. The attracted holes recombine with electrons supplied by the negative voltage, thereby substantially eliminating the holes.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: A bidirectional GaN FET with a single gate formed by integrating a single-gate bidirectional GaN FET in parallel with a bidirectional device formed of two back-to-back GaN FETs with a common source. The single-gate bidirectional GaN FET occupies most of the integrated circuit die, such that the integrated device has a low channel resistance, while also capturing the advantages of a back-to-back bidirectional GaN FET device.

Abstract: A fitting assembly for connection to a flexible duct includes a ferrule configured for insertion into an open end of the flexible duct a fitting removably connected to the ferrule. The ferrule includes a sidewall defining a minor diameter and a major diameter spaced apart from the minor diameter, and a ferrule thread extending radially outward from the sidewall. One of the fitting and the ferrule defines a recess. Another of the fitting and the ferrule comprises a tab configured to extend into the recess. One of the recess and the tab comprises an edge. Another of the recess and the tab comprises a ramped surface extending in a circumferential direction of the ferrule, such that rotation of the ferrule relative to the fitting causes the ramped surface to engage the edge, thereby radially deflecting the tab and disengaging the tab from the recess.

Abstract: A fitting assembly for connection to a flexible duct includes a fitting and a ferrule extending from the fitting. The ferrule includes a first end configured for insertion into an open end of the flexible duct, a second end adjacent to the fitting, and a sidewall extending between the first end and the second end. The sidewall defines a minor diameter adjacent the first end and a major diameter spaced apart from the minor diameter. The ferrule further includes a ferrule thread extending radially outward from the sidewall. The minor diameter is less than or equal to an inner diameter of the flexible duct with the flexible duct fully elongated, and the major diameter is greater than the inner diameter of the flexible duct with the flexible duct fully elongated.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: An indoor environmental control and air distribution system for a building includes: an air handling unit; a manifold connected to the air handling unit having a chamber formed by a plurality of walls and a plurality of orifices formed through at least one of the walls; air distribution conduits each independently having a first end connected to the orifices of the manifold and a second end extending out from the manifold into different zones throughout the building; and an airflow modulating device having one or more airflow regulating dampers independently configured to move into at least two positions in which each position provides a different percentage of total air volume to each air distribution conduit. A method of using the indoor environmental control and air distribution system is also included.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: A cascaded bootstrapping gate driver configured to provide quick turn-on of a high side power FET and low static current consumption. The cascaded bootstrapping gate driver includes an initial bootstrapping stage with a resistor to decrease static current consumption during transistor turn-off. A secondary bootstrapping stage is driven by the initial bootstrapping stage and includes a GaN FET transistor with a low on resistance in place of the resistor. The source terminal of the GaN FET transistor provides a gate driving voltage to the high side power switch FET. The low on-resistance of the GaN FET transistor provides quick turn-on of the high side power FET. Transistors in the cascaded bootstrapping gate driver are preferably enhancement mode GaN FETs and may be integrated into a single semiconductor die.