Patents by Inventor Robert D. Horning

Robert D. Horning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6912902
    Abstract: A low cost, pendulous, capacitive-sensing Micro Electro-Mechanical Systems (MEMS) accelerometer is provided. The accelerometer includes a pendulous proof mass, one or more securing pads, and one or more flexures coupled with the pendulous proof mass and the one or more securing pads. The flexures flex linearly with respect to motion of the pendulous proof mass. First and second capacitor plates are positioned relative to the pendulous proof mass for detecting motion of the proof mass according to a sensed difference in capacitance. One or more strain isolation beams are connected between the one or more flexures and the pendulous proof mass or the securing pads. The strain isolation beams protect the flexures from mechanical strain.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: July 5, 2005
    Assignee: Honeywell International Inc.
    Inventors: David L. Malametz, Stephen F. Becka, Robert D. Horning
  • Patent number: 6888233
    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
    Type: Grant
    Filed: March 10, 2003
    Date of Patent: May 3, 2005
    Assignee: Honeywell International Inc.
    Inventors: Robert D. Horning, Jeffrey A. Ridley
  • Patent number: 6858541
    Abstract: A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.
    Type: Grant
    Filed: August 5, 2002
    Date of Patent: February 22, 2005
    Assignee: Honeywell International, Inc.
    Inventor: Robert D. Horning
  • Publication number: 20040244484
    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
    Type: Application
    Filed: July 14, 2004
    Publication date: December 9, 2004
    Inventors: Robert D. Horning, Jeffrey A. Ridley
  • Patent number: 6816636
    Abstract: A tunable filter having a top mirror, a bottom mirror, and one or more intervening layers. The one or more intervening layers preferably have a refractive index that changes with temperature. By heating the one or more intervening layers, the wavelength that is selected by the optical filter can be controlled. The one or more intervening layers are preferably heated by passing current through the one or more intervening layers, or by passing current through a separate resistive layer that is thermally coupled to the one or more intervening layers. Such a filter can provide a high degree of wavelength selectivity in a robust and stable manner.
    Type: Grant
    Filed: September 12, 2001
    Date of Patent: November 9, 2004
    Assignee: Honeywell International Inc.
    Inventors: Barrett E. Cole, Subash Krishnankutty, Robert D. Horning
  • Publication number: 20040187578
    Abstract: A low cost, pendulous, capacitive-sensing Micro Electro-Mechanical Systems (MEMS) accelerometer is provided. The accelerometer includes a pendulous proof mass, one or more securing pads, and one or more flexures coupled with the pendulous proof mass and the one or more securing pads. The flexures flex linearly with respect to motion of the pendulous proof mass. First and second capacitor plates are positioned relative to the pendulous proof mass for detecting motion of the proof mass according to a sensed difference in capacitance. One or more strain isolation beams are connected between the one or more flexures and the pendulous proof mass or the securing pads. The strain isolation beams protect the flexures from mechanical strain.
    Type: Application
    Filed: March 26, 2003
    Publication date: September 30, 2004
    Inventors: David L. Malametz, Stephen F. Becka, Robert D. Horning
  • Publication number: 20040180464
    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
    Type: Application
    Filed: March 10, 2003
    Publication date: September 16, 2004
    Inventors: Robert D. Horning, Jeffrey A. Ridley
  • Patent number: 6770504
    Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-baron layer onto the undoped layer.
    Type: Grant
    Filed: January 6, 2003
    Date of Patent: August 3, 2004
    Assignee: Honeywell International Inc.
    Inventors: Robert D. Horning, McDonald Robinson, Timothy Louis Scullard
  • Publication number: 20040132227
    Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-boron layer onto the undoped layer.
    Type: Application
    Filed: January 6, 2003
    Publication date: July 8, 2004
    Inventors: Robert D. Horning, McDonald Robinson, Timothy Louis Scullard
  • Publication number: 20040023424
    Abstract: A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.
    Type: Application
    Filed: August 5, 2002
    Publication date: February 5, 2004
    Applicant: Honeywell International Inc.
    Inventor: Robert D. Horning
  • Publication number: 20030138588
    Abstract: Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.
    Type: Application
    Filed: December 30, 2002
    Publication date: July 24, 2003
    Inventors: Cleopatra Cabuz, Max C. Glenn, Francis M. Erdmann, Robert D. Horning
  • Publication number: 20030129845
    Abstract: Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 10, 2003
    Inventors: Cleopatra Cabuz, Max C. Glenn, Francis M. Erdmann, Robert D. Horning
  • Patent number: 6544655
    Abstract: Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.
    Type: Grant
    Filed: August 8, 2000
    Date of Patent: April 8, 2003
    Assignee: Honeywell International Inc.
    Inventors: Cleopatra Cabuz, Max C. Glenn, Francis M. Erdmann, Robert D. Horning
  • Publication number: 20030048970
    Abstract: A tunable filter having a top mirror, a bottom mirror, and one or more intervening layers. The one or more intervening layers preferably have a refractive index that changes with temperature. By heating the one or more intervening layers, the wavelength that is selected by the optical filter can be controlled. The one or more intervening layers are preferably heated by passing current through the one or more intervening layers, or by passing current through a separate resistive layer that is thermally coupled to the one or more intervening layers. Such a filter can provide a high degree of wavelength selectivity in a robust and stable manner.
    Type: Application
    Filed: September 12, 2001
    Publication date: March 13, 2003
    Inventors: Barrett E. Cole, Subash Krishnankutty, Robert D. Horning
  • Patent number: 6495865
    Abstract: A microcathode which integrates both an electron emitter, or cathode, and an extractor electrode. The electron emitter is attached to the back side of a thin film microstructure on a first surface of a substrate. Electrons are emitted from the electron emitter and into a via extending through the substrate. An electron beam is formed which is pulled through the via and out of the microcathode by an extractor electrode on a second surface of the substrate. The extractor electrode modulates the electron beam current, defines the beam profile, and accelerates the electrons toward an anode located outside of the microcathode. Microcathode of this invention are particularly suitable as electron emitting devices useful for various types of electron beam utilizing equipment such as flat cathode ray tube displays, microelectronic vacuum tube amplifiers, electron beam exposure devices and the like.
    Type: Grant
    Filed: February 1, 2001
    Date of Patent: December 17, 2002
    Assignee: Honeywell International Inc.
    Inventors: Burgess R. Johnson, Barrett E. Cole, Robert D. Horning, Ulrich Bonne
  • Publication number: 20020179563
    Abstract: A method of making a silicon micromechanical structure, from a lightly doped silicon substrate having less than <5×1019 cm−3 boron therein. A p+ layer having a boron content of greater than 7×1019 cm−3 and a germanium content of about 1×1021 cm−3 is placed on the substrate. A mask is formed on the second side, followed by etching to the p+ layer. An insulator is put on the p+ layer and an electronic component is fabricated thereon. Preferred micromechanical structures are pressure sensors, cantilevered accelerometers, and dual web biplane accelerometers. Preferred electronic components are dielectrically isolated piezoresistors and resonant microbeams. The method may include the step of forming a lightly doped layer on the p+ layer to form a buried p+ layer prior to etching.
    Type: Application
    Filed: June 4, 2001
    Publication date: December 5, 2002
    Inventors: Robert D. Horning, David W. Burns
  • Publication number: 20020102753
    Abstract: A microcathode which integrates both an electron emitter, or cathode, and an extractor electrode. The electron emitter is attached to the back side of a thin film microstructure on a first surface of a substrate. Electrons are emitted from the electron emitter and into a via extending through the substrate. An electron beam is formed which is pulled through the via and out of the microcathode by an extractor electrode on a second surface of the substrate. The extractor electrode modulates the electron beam current, defines the beam profile, and accelerates the electrons toward an anode located outside of the microcathode. Microcathode of this invention are particularly suitable as electron emitting devices useful for various types of electron beam utilizing equipment such as flat cathode ray tube displays, microelectronic vacuum tube amplifiers, electron beam exposure devices and the like.
    Type: Application
    Filed: February 1, 2001
    Publication date: August 1, 2002
    Applicant: Honeywell International Inc.
    Inventors: Burgess R. Johnson, Barrett E. Cole, Robert D. Horning, Ulrich Bonne
  • Patent number: 6411013
    Abstract: A microactuator array with an integrally formed package is disclosed. Because the package is made from the same material and at the same time as the actuator itself, no extra time or cost is associated with packaging. In addition, it is contemplated that the package may be configured to provide all the necessary interconnections and leads for addressing and distributing power to the various layers in the microactuator stack. Thus, no additional steps or cost are associated with electrical interconnection.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: June 25, 2002
    Assignee: Honeywell International Inc.
    Inventor: Robert D. Horning
  • Patent number: 6255758
    Abstract: A microactuator array device, which includes a plurality of generally parallel thin flexible polymer sheets bonded together in a predetermined pattern to form an array of unit cells on at least one layer. Thin conductive and dielectric films are deposited on the sheets to form a plurality of electrodes associated with the array of unit cells. A source of electric potential operably connects the electrodes, whereby electrostatic forces are generated most intensely proximate the point where the gap between the sheets is smallest. Inlets and outlets for each cell permit displacement of fluid during generation of the electrostatic forces. In a preferred embodiment, the plurality of sheets forms a stack of layers of arrays of unit cells. The layers are configured such that bi-directional activation is caused by pairs of actuators working opposite each other.
    Type: Grant
    Filed: July 3, 2000
    Date of Patent: July 3, 2001
    Assignee: Honeywell International Inc.
    Inventors: Cleopatra Cabuz, Robert D. Horning, William R. Herb
  • Patent number: 6184608
    Abstract: A microactuator array device, which includes a plurality of generally parallel thin flexible polymer sheets bonded together in a predetermined pattern to form an array of unit cells on at least one layer. Thin conductive and dielectric films are deposited on the sheets to form a plurality of electrodes associated with the array of unit cells. A source of electric potential operably connects the electrodes, whereby electrostatic forces are generated most intensely proximate the point where the gap between the sheets is smallest. Inlets and outlets for each cell permit displacement of fluid during generation of the electrostatic forces. In a preferred embodiment, the plurality of sheets forms a stack of layers of arrays of unit cells. The layers are configured such that bi-directional activation is caused by pairs of actuators working opposite each other.
    Type: Grant
    Filed: December 29, 1998
    Date of Patent: February 6, 2001
    Assignee: Honeywell International Inc.
    Inventors: Cleopatra Cabuz, Robert D. Horning, William R. Herb