Abstract: A method and apparatus for processing two substrates is provided. The apparatus comprises a chamber having an upper opening, a lower process volume adapted to retain a process solution, and an upper process volume, wherein the chamber is proportioned to vertically process two substrates. The apparatus further comprises a substrate transfer assembly adapted to transfer two substrates in and out of the chamber through the upper opening and one or more megasonic transducers disposed in the chamber, wherein the one or more megasonic transducers are configured to direct megasonic energy towards the process solution retained in the chamber.

Abstract: A polishing method usable in an apparatus including a rotatable member rotatable about a first axis, at least one substrate head assembly supported on said rotatable member, and at least two polishing surfaces arranged below said rotatable member at respective angular positions about said first axis is described. In one implementation, a substrate can be mounted onto a first one of said at least one substrate head assembly. The rotatable member can be rotated to a position so that the substrate overlies a selected one of the polishing surfaces. The substrate can be engaged with said selected polishing surface and relative linear movement imparted between the selected polishing surface and the first substrate head assembly, while the substrate is engaged with the selected polishing surface.

Abstract: Methods and apparatus for chemical mechanical polishing are described. In one embodiment, an apparatus includes a table top and a transfer station and multiple polishing stations are mounted on the table top. The apparatus further includes multiple washing stations, where each washing station is located between either two polishing stations or between a polishing station and a transfer station. Multiple carrier heads are supported by a support member that is rotatable about an axis. The transfer station and the multiple polishing stations are arranged at approximately equal angular intervals about the axis.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: In a first aspect, a first apparatus is provided. The first apparatus includes (1) a tank adapted to contain fluid; (2) at least one support component mounted in the tank and adapted to support a substrate in a supported position at least partially submerged in the fluid; (3) a transducer adapted to output sonic energy into the fluid; and (4) a reflector positioned at a side of the substrate and adapted to reflect the sonic energy toward an edge of the substrate so as to provide a 100% duty cycle. The reflector is positioned such that the reflector does not obstruct a path employed to load the substrate into the supported position and to unload the substrate from the supported position. Numerous other aspects are provided.

Abstract: An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes polishing surfaces located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, thus providing relative linear motion between the wafer and the polishing station. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing.

Abstract: A retaining ring is made of two generally annual portions. One portion has depressions and the other portion has projections that extend into the depressions when the two portions are brought together. The projections can have a cross section with two outwardly sloped sides.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: A retaining ring is made of two generally annual portions. One portion has depressions and the other portion has projections that extend into the depressions when the two portions are brought together. The projections can have a cross section with two outwardly sloped sides.

Abstract: A method for selectively altering a polishing pad adhesive layer includes providing a mask having transparent regions and opaque regions and directing radiation toward the mask so that the radiation passes through the transparent regions and impinges onto the adhesive layer on the polishing pad. The area of the adhesive layer corresponding to the transparent regions of the mask is cured to be less adhesive. The area of the adhesive layer corresponding to the opaque regions remain adhesive.

Abstract: A method for selectively altering a polishing pad adhesive layer includes providing a mask having transparent regions and opaque regions and directing radiation toward the mask so that the radiation passes through the transparent regions and impinges onto the adhesive layer on the polishing pad. The area of the adhesive layer corresponding to the transparent regions of the mask is cured to be less adhesive. The area of the adhesive layer corresponding to the opaque regions remain adhesive.

Abstract: A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: A polishing material for chemical mechanical polishing has a mesh of fibers and a binder material holding the fibers in the mesh. The binder material coalesced among the fibers to leave pores in the interstices between the fibers of the mesh. The fibers and binder material provide the polishing material with a brittle texture. The fibers can be cellulose, and the binder material can be a phenolic resin.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: A material with a mesh of fibers and a binder material holding the fibers in the mesh can be used on a carrier head or a polishing pad. A polishing apparatus can include a pad cleaner with nozzles to direct jets of cleaning fluid onto the polishing pad and a brush to agitate a surface of the polishing pad.

Abstract: A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.

Abstract: The polishing pad for a chemical mechanical polishing apparatus and method of making the same has a polishing pad with a bottom layer, a polishing surface on a top layer and a transparent sheet of material interposed between the two layers. Slurry from the chemical mechanical polishing process is prevented from penetrating the impermeable transparent sheet to the bottom layer of the polishing pad.

Abstract: A polishing pad for use in a chemical mechanical polishing system is provided. The pad is mounted to a rotatable platen and comprises a polishing surface and a deflection surface which provides a desired degree of rigidity and compliance to the pad when brought into contact with a substrate. The deflection surface may comprise one or more passageways extending through the pad which vent to atmosphere. In one embodiment, the deflection area defines a raised area and a recessed area. The raised area provides a mounting surface for the platen while the recessed area allows for compliance of the pad. In another embodiment, the deflection area comprises a plurality of channels defining a plurality of slanted protrusions. The channels may be non-intersecting such that the slanted protrusions are elongated portions disposed on the pad. Alternatively, the channels may be intersecting such that the slanted protrusions are isolated from one another and are disposed on the pad in spaced relation.