Abstract: The plate body of a hydrodynamic depressor is composed of a flat central panel flanked along its opposite longitudinal edges by side panels disposed at dihedral angles to the central panel. The central panel carries a guide rod extending fore and aft along which a ring connected to a fishing line slides, and ribs are engageable by the guide rod to deter displacement of the connecting ring from a rearward position to a forward position or vice versa. A housing carried by the forward portion of the body has a cylindrical crossbore receiving a cylindrical weight that can be shifted transversely of the fishing line guide rod to trim the depressor for traveling along a course offset to port or starboard from the course of the leading end of the fishing line. The upper and lower surfaces of the side panels are crinkled or rippled to form light-reflecting surfaces producing a glitter for attracting fish.

Abstract: A method for producing varistors having high energy absorption. The high energy absorption is achieved by combining predetermined quantities of Bi.sub.2 O.sub.3, BaO, SiO.sub.2 and Sb.sub.2 O.sub.3 with ZnO to produce a mixture which is sintered to produce a varistor disc having high energy absorption.

Abstract: A varistor utilizing a disc of mainly ZnO in combination with preselected combinations of Bi.sub.2 O.sub.3, Sb.sub.2 O.sub.3, SiO.sub.2, MgO and CaO.

Abstract: A method for making a varistor disc with increased high temperature stability. The method includes the steps of formulating a mixture for the varistor disc, compacting the mixture to form a disc, sintering the disc at a first preselected temperature and cooling the disc at a predetermined linear rate. The predetermined linear rate and preselected temperature are selected to reduce nonequilibrium conditions which become "frozen-in" as said disc is cooled.

Abstract: An apparatus including a playing board defined by a generally circular configuration, including a planar top surface with four equally spaced recessed triangulated player sections, wherein each player section includes a predetermined number of numbered recesses therewithin to correspond with four different colored sets of correspondingly numbered spheres. The spheres are positionable within a rotating tumbler and are permitted to be removed from the tumbler in a one-at-a-time sequence for selective association with one of said recesses. A further series of white spheres and a further series of black spheres are provided to direct respectively a free turn for the player and "wild" spheres for the black spheres for use with any number or coloration. Each player must utilize a corresponding coloration for a corresponding player position. Additionally, a plurality of dice are utilized to direct play in sequence about the board game.

Abstract: A method to preserve and sterilize biological tissues by exposing the tissue to microwave irradiation, thereby limiting tissue exposure to standard organic preservatives and retaining tissue pliability and other qualities that characterize natural, unpreserved tissue.

Abstract: A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.

Abstract: The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

Abstract: A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

Abstract: A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

Abstract: An improved connector pad stack structure for use in microstructure devices having a silicon nitride surface in which the sensor metal such as platinum or Ni-Fe is eliminated from the pad bonding site and only adhesion promoting metals are used on the Si.sub.3 N.sub.4 to provide a stronger, more durable and reliable pad stack.

Abstract: An integrated semiconductor device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surface of the body. A layer of thin film material covers at least a portion of the first surface and includes an electric, thermal-to-electric, or electric-to-thermal element. The diaphragm apparatus forms a slotted diaphragm substantially covering the depression. The slotted diaphragm includes one or more slots sized and oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot or slots will completely undercut the diaphragm and form the depression. The electric, thermal-to-electric, or electric-to-thermal element is substantially supported by the diaphragm and, therefore, is substantially thermally and physically isolated from the semiconductor body.

Abstract: An integrated semiconductor device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surface of the body. A layer of thin film material covers at least a portion of the first surface and includes an electric, thermal-to-electric, or electric-to-thermal element. The diaphragm apparatus forms a slotted diaphragm substantially covering the depression. The slotted diaphragm includes one or more slots sized and oriented so that, in the fabrication of the device, an anisotropic etch placed on the slot or slots will completely undercut the diaphragm and form the depression. The electric, thermal-to-electric, or electric-to-thermal element is substantially supported by the diaphragm and, therefore, is substantially thermally and physically isolated from the semiconductor body.

Abstract: The sensors and heater of a microbridge flow sensor are each compensated for non-linear curvature of the resistance versus temperature curve by the use of a section of permalloy in series with a section of platinum thin film resistor. The platinum exhibits non-linearity in one direction and the permalloy exhibits non-linearity in the opposite direction.

Abstract: Disclosed is a heating system having a combustion air blower, a fuel valve for providing fuel to a burner, and an exhaust stack for exhausting combustion products. Also disclosed is flow sensor apparatus operatively associated with the stack for providing control signals to a furnace control, the control signals being related to flow conditions in the stack.

Abstract: A gaseous composition sensor which is a microstructure device comprising a heated planar thin film diaphragm sensor member suspended over a shallow flat bottomed etched pit in a single crystal silicon substrate.

Abstract: An composite semiconductor device and a method of making is described. The device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body and a layer of thin film material covering at least a portion of the first surface. A depression formed in the first surface of the body with the layer of thin film material defines one or more members which have a predetermined configuration bridging the depression. First and second openings in the thin film layer flank each member such that an anisotropic etch placed on the openings undercuts the member to form the depression in a manner which substantially prevents undercutting of the semiconductor body below the thin film material at the boundaries of the predetermined configuration.

Abstract: A microscopic size absolute pressure sensor for air or gas of the thermal conductivity type, a silicon nitride covered silicon microchip has an elongated V-groove anisotropically etched in the silicon with a heated silicon nitride bridge element extending over the surface of the V-groove.

Abstract: A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater. Also disclosed is a semiconductor device comprising a thin film member which comprises an electrical element. The device further comprises a semiconductor body supporting the thin film member out of contact with the body and apparatus for electrically pulsing the electrical element. Such devices are the basis for many types of apparatus, including flow sensors.

Abstract: A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises a member comprising a thermal-to-electric transducer or static electric element or electrical-to-thermal element, the member having a predetermined configuration suspended over the depression. The member is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.