Abstract: The disclosure provides bipolar transistor structures with a cavity below an extrinsic base, and methods to form the same. A structure of the disclosure provides a bipolar transistor structure including an extrinsic base protruding from an intrinsic base of a bipolar transistor. The extrinsic base extends over a cavity. An insulator is horizontally adjacent the cavity and below a portion of the extrinsic base. A collector extension region of the bipolar transistor structure extends laterally below the insulator and the cavity.

Abstract: Example motor assemblies for architectural coverings are described herein. An example architectural covering assembly includes an architectural covering movable between an upper limit position, a lower limit position, and a transition limit position between the upper limit position and the lower limit position. The example architectural covering assembly also includes a motor, a consumer touchpoint, and an architectural covering controller. In response to detecting a first gesture at the consumer touchpoint, the architectural covering controller is to activate the motor to move the architectural covering to the transition limit position and stop, and in response to detecting a second gesture at the consumer touchpoint, different from the first gesture, the architectural covering controller is to activate the motor to move the architectural covering through the transition limit position and to the upper limit position or the lower limit position.

Abstract: Disclosed herein are systems, methods, and apparatuses for calibrating sensors of automated vehicles using calibration targets. A bracket holds the calibration targets and attaches to the automated vehicle proximate to a sensor being calibrated. For some sensors, such as GNSS antennas or similar device for receiving location data from a GNSS, a two-target bracket is fixed at the top of the automated vehicle, nearby the GNSS antenna. For IMUs or similar sensors, a three-target bracket is fixed at location of the automated vehicle proximate to the particular IMU, such as a passenger cabin or on the chassis of the automated vehicle. The calibration targets include a retroreflective surface that reflect signals, such as infrared signals, back to a theodolite (or total station). The theodolite or computer includes preprogrammed offset values indicating the relative positions of the sensor being calibrated and each of the calibration targets of the bracket.

Abstract: An integrated circuit (IC) device is disclosed which includes a first transistor over a substrate. The first transistor includes a gate over the substrate and between a source region and a drain region. The transistor further includes a first region of vertically-graded silicon germanium (“SiGe”) adjacent a first side of a channel under the gate, and a second region of vertically-graded SiGe adjacent a second side of the channel. The channel includes substantially uniformly-graded SiGe.

Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.

Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.

Abstract: A biological fluid analysis cartridge is provided. In certain embodiments, the cartridge includes a base plate extending between a sample handling portion and an analysis chamber portion. A handling upper panel is attached to the base plate within the sample handling portion. A collection port is at least partially formed with the handling upper panel. An initial channel and a secondary channel are formed between the handling upper panel and the base plate. The collection port and initial and secondary channels are in fluid communication with one another. A chamber upper panel is attached to the base plate within the analysis chamber portion. At least one analysis chamber is formed between the chamber upper panel and the base plate. The secondary channel and the analysis chamber are in fluid communication with one another.

Abstract: An antigen targeting agent is provided. The antigen targeting agent binds to a mutated Kirsten rat sarcoma viral oncogene homolog (KRAS) protein having a missense mutation at position 12 when a peptide incorporating the missense mutation is presented by an HLA-A*02 molecule. The missense mutation at position 12 of the KRAS protein may be G12D, G12V or G12C. The antigen targeting agents can be used diagnostically or for immunotherapy.

Abstract: A transistor device formed on a semiconductor-on-insulator (SOI) substrate including a bulk semiconductor layer, a buried insulation (BOX) layer positioned on the bulk semiconductor layer, and an active semiconductor layer positioned on the BOX layer. The transistor device includes: a gate structure, a sidewall spacer, and a source/drain region; a plurality of distinct openings extending through the active semiconductor layer of the SOI substrate in the source/drain region adjacent the sidewall spacer, each opening of the plurality of openings extending to a respective recess formed in the BOX layer of the SOI substrate in the source/drain region adjacent the sidewall space, wherein each recess extends under a portion of the active semiconductor layer; and an epitaxial (epi) semiconductor material disposed in the recesses in the BOX layer, in the plurality of openings through the active semiconductor layer, and over a surface of the active semiconductor layer.

Abstract: A transistor device formed on a semiconductor-on-insulator (SOI) substrate including a bulk semiconductor layer, a buried insulation (BOX) layer positioned on the bulk semiconductor layer, and an active semiconductor layer positioned on the BOX layer. The transistor device includes: a gate structure, a sidewall spacer, and a source/drain region; a plurality of distinct openings extending through the active semiconductor layer of the SOI substrate in the source/drain region adjacent the sidewall spacer, each opening of the plurality of openings extending to a respective recess formed in the BOX layer of the SOI substrate in the source/drain region adjacent the sidewall space, wherein each recess extends under a portion of the active semiconductor layer; and an epitaxial (epi) semiconductor material disposed in the recesses in the BOX layer, in the plurality of openings through the active semiconductor layer, and over a surface of the active semiconductor layer.

Abstract: The present disclosure relates to the field of cancer biomarkers and treatments, and more particularly to methods of predicting susceptibility to cancer treatments, in particular treatments with Axl inhibitors. Also disclosed are products, such as kits, having utility in performing the disclosed methods.

Abstract: A method of forming a semiconductor device is provided, which includes providing gate structures over an active region and forming a hard mask segment on the active region positioned between a first gate structure and a second gate structure. Cavities are formed in the active region using the gate structures and the hard mask segment as masking features, wherein each cavity has a width substantially equal to a minimum gate-to-gate spacing of the semiconductor device. Epitaxial material is grown in the cavities to form substantially uniform epitaxial structures in the active region.

Abstract: A semiconductor device is provided that includes a substrate, an active region, a pair of gates, a plurality of semiconductor structures and a plurality of pillar structures. The active region is over the substrate. The pair of gates is formed over the active region, and each gate of the pair of gates includes a gate structure and a pair of spacer structures disposed on sidewalls of the gate structure. The plurality of semiconductor structures is arranged between the pair of gates in an alternating arrangement configuration having a first width and a second width. The first width is substantially equal to a width of the gate structure. The plurality of semiconductor structures is separated by the plurality of pillar structures.

Abstract: A semiconductor device is provided that includes a substrate, an active region, a pair of gates, a plurality of semiconductor structures and a plurality of pillar structures. The active region is over the substrate. The pair of gates is formed over the active region, and each gate of the pair of gates includes a gate structure and a pair of spacer structures disposed on sidewalls of the gate structure. The plurality of semiconductor structures is arranged between the pair of gates in an alternating arrangement configuration having a first width and a second width. The first width is substantially equal to a width of the gate structure. The plurality of semiconductor structures is separated by the plurality of pillar structures.

Abstract: A biological fluid sample analysis chamber and a method for analyzing a biological fluid sample is provided. The chamber includes a first chamber panel, a second chamber panel, and a plurality of beads disposed between the first chamber panel and the second chamber panel, which beads are configured to not reflect light incident to the beads in an amount that appreciably interferes with a photometric analysis of the biologic fluid.

Abstract: A method of forming a semiconductor device is provided, which includes providing gate structures over an active region and forming a hard mask segment on the active region positioned between a first gate structure and a second gate structure. Cavities are formed in the active region using the gate structures and the hard mask segment as masking features, wherein each cavity has a width substantially equal to a minimum gate-to-gate spacing of the semiconductor device. Epitaxial material is grown in the cavities to form substantially uniform epitaxial structures in the active region.

Abstract: An eyewear retention device is disclosed that includes a length of resilient braided or monofilament line, terminating at each end in a tapered, rubberized retention tubing. One or more retractable spring loaded mechanisms have a locking mechanism for easy extraction and retraction back and forth by simply pulling on said line. The combination of the resilient line and the mechanisms produces a tensioned arc such that in addition to retaining eyeglasses around wearers head when in use when not in use with a simple pull on said line, the retention device forms a suspended arc over the wear's upper torso such that the device does not contact the wear's upper torso or their vestment when donned over a wearer's eyes.

Abstract: A method and system for automatically joining a conference, in which a user is able to make use of a conference room or other shared resource site to be promptly auto-connected to an upcoming meeting event. The user can provide security credentials to log-into the system, and the system can access the user's calendar and automatically connect the user with their next scheduled meeting from a selected conference room or other shared resource site.

Abstract: The present invention is a method for determining the identity of the epitopes recognized by T-cells. The method consists of expressing an encoded library of candidate epitope sequences in a recipient reporter cell capable of providing a detectable signal upon cytotoxic attack from a single cognate T-cell followed by contacting the reporter cells with T-cells of interest. The reporter cells with a signal indicating cytotoxic attack from a T-cell are isolated and then analyzed by next-generation sequencing in order to identify the epitope sequences.

Abstract: The present invention is a method for determining the identity of the epitopes recognized by T-cells. The method consists of expressing an encoded library of candidate epitope sequences in a recipient reporter cell capable of providing a detectable signal upon cytotoxic attack from a single cognate T-cell followed by contacting the reporter cells with T-cells of interest. The reporter cells with a single indicating cytotoxic attack from a T-cell are isolated and then analyzed by next-generation sequencing in order to identify the epitope sequences. Specifically disclosed is a method in which a library of candidate epitope-encoding nucleic acids are expressed in cells which feature a membrane-bound major histocompatibility complex (MHC) protein, said library produced by transfection of plasmids featuring both a nucleotide encoding the candidate epitope and a nucleotide encoding a FRET-based fluorescent protein cleaved by granzyme.