Abstract: A semiconductor die is described. This semiconductor die includes a driver, and a spatial alignment transducer that is electrically coupled to the driver and which is proximate to a surface of the semiconductor die. The driver establishes a spatially varying electric charge distribution in at least one direction in the spatial alignment transducer, thereby facilitating determination of a spatial alignment in more than one direction between the semiconductor die and another semiconductor die. In particular, a spatial alignment sensor proximate to the surface of the other semiconductor die may detect an electrical field (or an associated electrostatic potential) associated with the spatially varying electric charge distribution. This detected electric field may allow the vertical spacing between the surfaces of the semiconductor dies and/or an angular alignment of the semiconductor dies to be determined.

Abstract: The disclosed embodiments provide a synchronizer latch circuit that facilitates resolving metastability issues. This synchronizer latch circuit includes a set of lightly loaded, cross-coupled transistors that form a metastable resolving and state-holding element that is coupled to two outputs. An incoming synchronization signal creates a voltage difference between the two outputs, but does not directly force a state change for the outputs. Instead, the data and clock inputs control transistors that allow neighboring power sources and/or ground network connections to weakly influence the outputs. The cross-coupled transistors then amplify the resulting voltage difference to generate valid output voltages, even when the data input and clock signal are received at roughly the same time. Thus, the synchronizer latch circuit facilitates rapidly resolving metastability and improving synchronizer performance.

Abstract: A memory device with increased communication bandwidth is described. In this memory device, control logic routes data signals from a memory array using inactive bitlines in response to a read command. These data signals are then placed on an adjacent unused input/output (I/O) line or routing channel, as opposed to a proximate I/O line that is in use. For example, unused bitlines located on the top and bottom of the memory array may be used to route data signals to adjacent local I/O lines. In particular, the data signals can be placed on unused local I/O lines which are associated with adjacent bitline sense amplifiers. The resulting increased communication bandwidth can overcome the constraints imposed by the limited number of local I/O lines in the memory device without appreciably increasing the chip size, power consumption, or cost.

Abstract: An assembly component and a technique for assembling a chip package using the assembly component are described. This chip package includes a set of semiconductor dies that are arranged in a stack in a vertical direction, which are offset from each other in a horizontal direction to define a stepped terraced at one side of the vertical stack. Moreover, the chip package may be assembled using the assembly component. In particular, the assembly component may include a housing having another stepped terrace. This other stepped terrace may include a sequence of steps in the vertical direction, which are offset from each other in the horizontal direction. Furthermore, the housing may be configured to mate with the set of semiconductor dies such that the set of semiconductor dies are arranged in the stack in the vertical direction. For example, the other stepped terrace may approximately be a mirror image of the stepped terrace.

Abstract: One embodiment of the present invention provides a system that facilitates proximity communication. This system includes a circuit containing a bootstrap transistor and a pass-gate transistor, where the drain of the bootstrap transistor is coupled to the gate of the pass-gate transistor. Note that a first coupling capacitance exists between the source of the pass-gate transistor and the drain of the bootstrap transistor and a second coupling capacitance exists between the drain of the pass-gate transistor and the drain of the bootstrap transistor. During operation, the gate and the source of the bootstrap transistor are coupled to a high voltage, thereby causing an intermediate voltage at the drain of the bootstrap transistor.

Abstract: A capacitively and conductively coupled multiplexer (C3mux) circuit is described. This C3mux circuit includes a set of nonlinear coupling capacitors, such as metal-oxide-semiconductor (MOS) transistors, that can multiplex multiple input signals while minimizing the parasitic capacitance penalty associated with the ‘off’ paths. In particular, the capacitance of a given MOS transistor depends on whether its channel is present or absent. Furthermore, this channel is formed based on whether the gate-to-source and drain voltages for the MOS transistor are greater than the MOS transistor's threshold voltage. Note that the capacitance of the MOS transistors in the C3mux circuit is low for the unselected inputs. Consequently, the parasitic loading and the delay increase slowly as a function of the number of inputs. Moreover, the conductive feedback can be used to maintain a DC level of the input signals.

Abstract: A ramp-stack chip package is described. This chip package includes a vertical stack of semiconductor dies or chips that are offset from each other in a horizontal direction, thereby defining a stepped terrace. A high-bandwidth ramp component, which is positioned approximately parallel to the stepped terrace, is mechanically coupled to the semiconductor dies. Furthermore, the ramp component includes an optical waveguide that conveys the optical signal, and an optical coupling component that optically couples the optical signal to one of the semiconductor dies, thereby facilitating high-bandwidth communication of the optical signal between the semiconductor die and the ramp component.

Abstract: A ramp-stack chip package is described. This chip package includes a vertical stack of semiconductor dies or chips that are offset from each other in a horizontal direction, thereby defining a terrace with exposed pads. A high-bandwidth ramp component, which is positioned approximately parallel to the terrace, is electrically and mechanically coupled to the exposed pads. For example, the ramp component may be coupled to the semiconductor dies using: solder, microsprings and/or an anisotropic conducting film. Furthermore, each of the semiconductor dies includes a static bend so that an end segment of each of the semiconductor dies is parallel to the direction and is mechanically coupled to the ramp component. These end segments may facilitate high-bandwidth communication of signals between the chips and the ramp component, for example, via proximity communication.

Abstract: A semiconductor die is described. This semiconductor die includes an electro-static discharge (ESD) device with a metal component coupled to an input-output (I/O) pad, and coupled to a ground voltage via a signal line. Moreover, adjacent edges of the metal component and the I/O pad are separated by a spacing that defines an ESD gap. When a field-emission or ionization current flows across the ESD gap, the metal component provides a discharge path to the ground voltage for transient ESD signals. Furthermore, the ESD gap is at least partially enclosed so that there is gas in the ESD gap.

Abstract: Some embodiments of the present invention provide techniques and systems for high-bandwidth on-chip communication. During operation, the system receives an input voltage signal which is to be transmitted over a wire in a chip. The system then generates one or more modified voltage signals from the input voltage signal. Next, the system drives each of the voltage signals (i.e., the input voltage signal and the one or more modified voltage signals) through a respective capacitor. The system then combines the output signals from the capacitors to obtain a combined voltage signal. Next, the system transmits the combined voltage signal over the wire. The transmitted signals can then be received by a hysteresis receiver which is coupled to the wire through a coupling capacitor.

Abstract: The disclosed embodiments provide a first-in, first-out (FIFO) circuit that operates asynchronously. The FIFO circuit includes a data path that contains data latches sequentially connected through data-wire segments. The FIFO circuit also includes a control circuit that generates control signals for the data latches so that the data path behaves like a FIFO. The control circuit includes control components sequentially connected to each other through control-wire segments and repeaters located within the control-wire segments. The control components are configured to asynchronously generate the control signals for the data latches, and the repeaters are configured to repeat asynchronous signals communicated between the asynchronous control components.

Abstract: In a proximity communication system, transmit elements on one chip are aligned with receive elements on a second chip juxtaposed with the first chip. However, if the elements are misaligned, either statically or dynamically, the coupling between chips is degraded. The misalignment may be compensated by controllably degrading performance of the system. For example, the transmit signal strength may be increased. The bit period or the time period for biasing each bit may be increased, thereby decreasing the bandwidth. Multiple coupling elements, such as capacitors, may be ganged together, thereby decreasing the number of channels. The granularity of symbols, such as images, may be increased by decreasing the number of bits per symbol. Multiple coupling elements, such as capacitors, may be ganged together, thereby decreasing the number of channels.

Abstract: The disclosed embodiments provide a first-in, first-out (FIFO) circuit that operates asynchronously. The FIFO circuit includes a data path that contains data latches sequentially connected through data-wire segments. The FIFO circuit also includes a control circuit that generates control signals for the data latches so that the data path behaves like a FIFO. The control circuit includes control components sequentially connected to each other through control-wire segments and repeaters located within the control-wire segments. The control components are configured to asynchronously generate the control signals for the data latches, and the repeaters are configured to repeat asynchronous signals communicated between the asynchronous control components.

Abstract: A semiconductor die is described. This semiconductor die includes an electro-static discharge (ESD) device with a metal component coupled to an input-output (I/O) pad, and coupled to a ground voltage via a signal line. Moreover, adjacent edges of the metal component and the I/O pad are separated by a spacing that defines an ESD gap. When a field-emission or ionization current flows across the ESD gap, the metal component provides a discharge path to the ground voltage for transient ESD signals. Furthermore, the ESD gap is at least partially enclosed so that there is gas in the ESD gap.

Abstract: An interconnect for surfing circuits is presented. The interconnect includes at least one control signal line, at least one data signal line, and at least one variable capacitor coupled to the at least one control signal line and the at least one data signal line, wherein the capacitance of the variable capacitor is configured to be controlled by a control signal on the control signal line so that a velocity of a data signal transmitted on the at least one data signal line is determined by the value of the capacitance of the variable capacitor.

Abstract: A device includes a semiconductor die having a surface, a plurality of proximity connectors proximate to the surface, and a circuit coupled to at least one of the plurality of proximity connectors. The semiconductor die is configured to communicate voltage-mode signals through capacitive coupling using one or more of the plurality of proximity connectors. The circuit also includes a filter with a capacitive-summing junction to equalize the signals.

Abstract: One embodiment of the present invention provides a system that facilitates capacitive communication between integrated circuit chips. The system includes a substrate having an active face upon which active circuitry and signal pads reside, and a back face opposite the active face. The system additionally includes an integrated circuit chip having an active face upon which active circuitry and signal pads reside, and a back face opposite the active face. Additionally, the integrated circuit chip is pressed against the substrate such that the active face of the integrated circuit chip is parallel to and adjacent to the active face of the substrate, and capacitive signal pads on the active face of the integrated circuit chip overlap signal pads on the active face of the substrate. The arrangement of the substrate and integrated circuit chip facilitates communication between the integrated circuit chip and the substrate through capacitive coupling via the overlapping signal pads.

Abstract: One embodiment of the present invention provides a system that facilitates reducing the power needed for proximity communication. This system includes an integrated circuit with an array of transmission pads that transmit signals using proximity communication. This array is comprised of a set of macropads, where each given macropad is comprised of a set of micropads that can be configured to transmit a signal. A steering fabric routes signals to and within macropads, such that a subset of the micropads in the array can be configured to transmit the signal to a receiving component. Each macropad receives a limited number of input signals, with the steering fabric routing input signals to the micropads of the macropads. By limiting the number of input signals that are routed to the micropads of the macropads, the steering fabric eliminates redundant steering configurations for the array and reduces the power needed to transmit the signal.

Abstract: One embodiment of the present invention provides a system that performs differential signaling through parallel ports in a manner that reduces noise caused by coupling between neighboring ports. The system includes parallel ports for transmitting differential signals from a sender to a receiver, wherein the parallel ports are organized in a two-dimensional grid. Each differential signal is transmitted through a first port and a second port that carry complementary positive and negative components of the differential signal. The first and second ports of a differential pair are diagonally adjacent to each other in the two-dimensional grid. Because the first and second ports transition in opposite directions, coupling noise is cancelled on a neighboring port that is horizontally adjacent to the first port and vertically adjacent to the second port.

Abstract: One embodiment of the present invention provides an integrated circuit chip, including an active face upon which active circuitry and signal pads reside, and a back face opposite the active face. The integrated circuit chip additionally comprises an electromagnetic via that facilitates communication between signal pads on the integrated circuit chip and signal pads on a second integrated circuit chip. The electromagnetic via couples a signal pad on the active face of the integrated circuit chip to the back face of the integrated circuit chip so that the integrated circuit chip can communicate with the second integrated circuit chip while the back face of the integrated circuit chip is adjacent to the active face of the second integrated circuit chip. Moreover, the electromagnetic via operates by facilitating non-conductive signaling through the integrated circuit chip.