Patents by Inventor Robert J. Steger
Robert J. Steger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8921740Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.Type: GrantFiled: August 13, 2013Date of Patent: December 30, 2014Assignee: Lam Research CorporationInventors: Neil Benjamin, Robert J. Steger
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Patent number: 8747559Abstract: A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer member includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.Type: GrantFiled: June 24, 2011Date of Patent: June 10, 2014Assignee: Lam Research CorporationInventor: Robert J. Steger
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Publication number: 20140034608Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.Type: ApplicationFiled: August 13, 2013Publication date: February 6, 2014Applicant: Lam Research CorporationInventors: Neil Benjamin, Robert J. Steger
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Publication number: 20110262315Abstract: A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer member includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.Type: ApplicationFiled: June 24, 2011Publication date: October 27, 2011Applicant: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 7993460Abstract: A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer member includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.Type: GrantFiled: June 30, 2003Date of Patent: August 9, 2011Assignee: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 7718932Abstract: An electrostatic chuck (“chuck”) is provided for controlling a radial temperature profile across a substrate when exposed to a plasma. The chuck includes a number of independently controllable gas volumes that are each defined in a radial configuration relative to a top surface of the chuck upon which the substrate is to be supported. The chuck includes a support member and a base plate. The base plate positioned beneath and in a spaced apart relationship from the support member. The gas volumes are defined between the base plate and the support member, with separation provided by annularly-shaped thermally insulating dividers. Each gas volume can include a heat generation source. A gas pressure and heat generation within each gas volume can be controlled to influence thermal conduction through the chuck such that a prescribed radial temperature profile is achieved across the substrate.Type: GrantFiled: November 22, 2006Date of Patent: May 18, 2010Assignee: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 7648582Abstract: A method of cleaning an ESC comprises immersing a ceramic surface of the ESC in dielectric fluid; spacing the ceramic surface of the ESC apart from a conductive surface such that the dielectric fluid fills a gap between the ceramic surface of the ESC and the conductive surface; and subjecting the dielectric fluid to ultrasonic agitation while simultaneously applying voltage to the ESC.Type: GrantFiled: December 23, 2005Date of Patent: January 19, 2010Assignee: Lam Research CorporationInventor: Robert J. Steger
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Publication number: 20090120583Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.Type: ApplicationFiled: January 7, 2009Publication date: May 14, 2009Applicant: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 7480974Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.Type: GrantFiled: February 15, 2005Date of Patent: January 27, 2009Assignee: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 7282454Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.Type: GrantFiled: August 15, 2003Date of Patent: October 16, 2007Assignee: Lam Research CorporationInventors: Richard A. Gottscho, Robert J. Steger
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Patent number: 7223321Abstract: An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.Type: GrantFiled: August 30, 2002Date of Patent: May 29, 2007Assignee: Lam Research CorporationInventors: Keith Comendant, Robert J. Steger
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Patent number: 7176403Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.Type: GrantFiled: October 22, 2004Date of Patent: February 13, 2007Assignee: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 7161121Abstract: An electrostatic chuck (“chuck”) is provided for controlling a radial temperature profile across a substrate when exposed to a plasma. The chuck includes a number of independently controllable gas volumes that are each defined in a radial configuration relative to a top surface of the chuck upon which the substrate is to be supported. The chuck includes a support member and a base plate. The base plate positioned beneath and in a spaced apart relationship from the support member. The gas volumes are defined between the base plate and the support member, with separation provided by annularly-shaped thermally insulating dividers. Each gas volume can include a heat generation source. A gas pressure and heat generation within each gas volume can be controlled to influence thermal conduction through the chuck such that a prescribed radial temperature profile is achieved across the substrate.Type: GrantFiled: October 6, 2005Date of Patent: January 9, 2007Assignee: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 6976782Abstract: In a plasma processing system, a method of determining the temperature of a substrate is disclosed. The method includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck. The method further includes creating a temperature calibration curve for the substrate, the temperature calibration curve being created by measuring at least a first substrate temperature with an electromagnetic measuring device, and measuring a first chuck temperature with a physical measuring device during a first isothermal state. The method also includes employing a measurement from the electromagnetic measurement device and the temperature calibration curve to determine a temperature of the substrate during plasma processing.Type: GrantFiled: November 24, 2003Date of Patent: December 20, 2005Assignee: Lam Research CorporationInventor: Robert J. Steger
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Patent number: 6896765Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.Type: GrantFiled: September 18, 2002Date of Patent: May 24, 2005Assignee: Lam Research CorporationInventor: Robert J. Steger
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Publication number: 20040261721Abstract: A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer member includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.Type: ApplicationFiled: June 30, 2003Publication date: December 30, 2004Inventor: Robert J. Steger
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Publication number: 20040224128Abstract: Components for use in plasma processing chambers having plasma exposed surfaces with surface roughness characteristics that promote polymer adhesion. The roughened surfaces are formed by plasma spraying a coating material such as a ceramic or high temperature polymer onto the surface of the component. The plasma sprayed components of the present invention can be used for plasma reactor components having surfaces exposed to the plasma during processing. Suitable components include chamber walls, chamber liners, baffle rings, gas distribution plates, plasma confinement rings, and liner supports. By improving polymer adhesion, the plasma sprayed component surfaces can reduce the levels of particle contamination in the process chamber thereby improving yields and reducing down-time required for cleaning and/or replacing chamber components.Type: ApplicationFiled: June 18, 2004Publication date: November 11, 2004Applicant: Lam Research CorporationInventors: Christopher C. Chang, Robert J. Steger
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Patent number: 6805952Abstract: Components for use in plasma processing chambers having plasma exposed surfaces with surface roughness characteristics that promote polymer adhesion. The roughened surfaces are formed by plasma spraying a coating material such as a ceramic or high temperature polymer onto the surface of the component. The plasma sprayed components of the present invention can be used for plasma reactor components having surfaces exposed to the plasma during processing. Suitable components include chamber walls, chamber liners, baffle rings, gas distribution plates, plasma confinement rings, and liner supports. By improving polymer adhesion, the plasma sprayed component surfaces can reduce the levels of particle contamination in the process chamber thereby improving yields and reducing down-time required for cleaning and/or replacing chamber components.Type: GrantFiled: December 29, 2000Date of Patent: October 19, 2004Assignee: Lam Research CorporationInventors: Christopher C. Chang, Robert J. Steger
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Publication number: 20040190215Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.Type: ApplicationFiled: January 28, 2004Publication date: September 30, 2004Applicant: Applied Materials, Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Critical dimension variation compensation across a wafer by means of local wafer temperature control
Patent number: 6770852Abstract: A wafer etching system has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a number of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a number of heating elements disposed within the chuck. Each heating element is positioned adjacent to one of the preset locations on the wafer. The controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The controller is also coupled to control the heating elements. The controller adjusts the temperature of each heating elements during a process to reduce so as the variation of critical dimensions measured at the preset locations.Type: GrantFiled: February 27, 2003Date of Patent: August 3, 2004Assignee: Lam Research CorporationInventor: Robert J. Steger