Abstract: An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.

Abstract: An improved plasma etching apparatus is disclosed which includes an etch chamber having inner metal surfaces with a conductive coating formed thereon which is capable of protecting such inner metal surfaces from chemical attack by reactant gases such as halogen-containing gases used in said chamber during plasma etching processes. In a preferred embodiment, at least about 0.2 micrometers of a carbon coating is formed on the inner metal surfaces of the etch chamber by a plasma-assisted CVD process using a gaseous source of carbon and either hydrogen or nitrogen or both.

Abstract: An improved semiconductor wafer transfer method and system incorporates a combination of wafer retractor (14) and wafer lifters (16) built into each processing chamber with a modified transport arm (12) to achieve large enhancements in wafer exchange speeds. The transport arm (12) brings a new wafer into a processing chamber (18) where an already processed wafer waits for retrieval, having been lifted into the central portion of the chamber by lifters (16). In a simultaneous action, lifters (16) lower the processed wafer onto a lower platform of the transport arm (12) while the wafer retractor (14) removes the new wafer from an upper platform of the transport arm (12). Once the transport arm (12) removes the processed wafer from the chamber (18), the retractor (14) lowers the new wafer onto the wafer lifters (16) and processing begins.

Abstract: An improved plasma etching apparatus is disclosed comprising an etch chamber having inner metal surfaces with a conductive coating formed thereon which is capable of protecting such inner metal surfaces from chemical attack by reactant gases such as halogen-containing gases used in said chamber during plasma etching processes. In a preferred embodiment, at least about 0.2 micrometers of a carbon coating is formed on the inner metal surfaces of the etch chamber by a plasma-assisted CVD process using a gaseous source of carbon and either hydrogen or nitrogen or both.