Abstract: A wafer etching system has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a number of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a number of heating elements disposed within the chuck. Each heating element is positioned adjacent to one of the preset locations on the wafer. The controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The controller is also coupled to control the heating elements. The controller adjusts the temperature of each heating elements during a process to reduce so as the variation of critical dimensions measured at the preset locations.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: Components for use in plasma processing chambers having plasma exposed surfaces with surface roughness characteristics that promote polymer adhesion. The roughened surfaces are formed by plasma spraying a coating material such as a ceramic or high temperature polymer onto the surface of the component. The plasma sprayed components of the present invention can be used for plasma reactor components having surfaces exposed to the plasma during processing. Suitable components include chamber walls, chamber liners, baffle rings, gas distribution plates, plasma confinement rings, and liner supports. By improving polymer adhesion, the plasma sprayed component surfaces can reduce the levels of particle contamination in the process chamber thereby improving yields and reducing down-time required for cleaning and/or replacing chamber components.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1.

Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

Abstract: The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

Abstract: In accordance with the present invention, a temperature-controlled ceramic liner or barrier is used adjacent to process chamber surfaces during a plasma-comprising process, with the liner or barrier temperature being set to reduce the formation of deposits upon or to aid in the removal of deposits from the liner surface during the processing of a semiconductor substrate within the process chamber. In the alternative, cleaning of the process chamber surface is carried out after the semiconductor substrate is removed from the chamber, and the liner or barrier temperature is set to assist in the removal of deposits from the liner or barrier surface. Deposits accumulate on some process chamber surfaces faster than on others. Since the rate of deposit formation or removal is temperature dependent, the temperature-controlled ceramic liner may be constructed to enable independent temperature settings at different locations within the liner.

Abstract: The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

Abstract: The basic structure facilitates the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck addresses the problem of the RF plasma environment which seeks the interface between the electrostatic chuck dielectric surface layer and its underlying conductive layer, and includes an underlying conductive layer which contains at least one gas flow passageway and at least one dielectric layer overlying said conductive layer. The dielectric layer forms the upper surface of the chuck and contains at least one opening or passageway which connects with the fluid flow passageway in the conductive layer. The distance between the upper surface of the conductive layer and the upper surface of the chuck is greater in the area adjacent to the opening to a fluid flow passageway to the upper surface of the chuck. As a result, the dielectric layer thickness is greater in the area adjacent to the opening or passageway than at other locations on the surface of the chuck.

Abstract: The present invention discloses a basic structure and a method for fabrication of the structure which facilitates the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structure addresses the problem of the rf plasma environment which seeks the interface between the electrostatic chuck dielectric surface layer and its underlying conductive layer. The basic structure includes an underlying conductive layer which contains at least one gas flow passageway and at least one dielectric layer overlying said conductive layer. The dielectric layer forms the upper surface of the dielectric chuck and contains at least one opening or passageway which connects with the fluid flow passageway in the conductive layer. The dielectric layer thickness is greater in the area of the opening or passageway than at other locations on the surface of the dielectric chuck.

Abstract: A combined wafer support and thermocouple assembly comprising a wafer support basket having a plurality of wafer support fingers, one of which includes a low mass, low heat constant support for supporting a thermocouple against the backside of a wafer positioned on the basket.

Abstract: An electrostatic chuck (113) having grooves (130, 132, 134) to uniformly distribute a heat transfer medium, e.g., a gas, and a method of fabricating such an electrostatic chuck. Specifically, a grooved layer (112) is formed upon a surface (110) of a conventional chuck body (111). Typically, a conventional chuck body contains a substrate (100) having one or more electrodes (104, 106) deposited thereupon and a first layer (108), typically formed of an insulating material, disposed over the electrodes and a surface of the substrate which supports the electrodes. A second layer (112), typically formed of an insulating material, is formed by screen printing a paste of insulating material over a surface of the first layer. The paste is applied in a pattern which includes at least one gap. After curing the paste into a hard layer, the second layer contains the gap or gaps defined by the screen pattern.

Abstract: A plasma processing apparatus including a wafer supporting pedestal which is designed to reduce particle trapping phenomena. In a region of the pedestal surface which surrounds or abuts the wafer, the pedestal has a permittivity which is substantially equal to or greater than that of the wafer surface. As a result, the sheath boundary is reshaped to reduce particle trapping.

Abstract: A combined wafer support and thermocouple assembly comprising a wafer support basket having a plurality of wafer support fingers, one of which includes a low mass, low heat constant support for supporting a thermocouple against the backside of a wafer positioned on the basket.

Abstract: A plasma reactor containing within the processing chamber pieces of magnetic material located to reduce and/or substantially eliminate systematic processing rate nonuniformities. These pieces are placed inside the chamber or attached inside of the pedestal adjacent to the top of the pedestal, where the wafer is to be located for processing. The thickness, shape and magnetic permeabilities of these magnetic pieces are selected to optimize process uniformity.