Abstract: A method for making an electronic device may include forming first and second integrated circuits including respective first and second active optical devices establishing an optical communications link therebetween. The first active optical device may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: A method for making an integrated circuit may include forming at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: An electronic device may include first and second integrated circuits including respective first and second active optical devices establishing an optical communications link therebetween. The first active optical device may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Also, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Abstract: An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The integrated circuit may further include a waveguide coupled to the at least one active optical device.

Abstract: A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Accordingly, the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise be present.

Abstract: An infra-red light-modulating device comprises a semiconductor substrate, a layer of light-modulating material such as liquid crystal on a first part of the substrate, and electrodes for addressing the light-modulating layer, the electrode in one side can be a common ITO layer, and the pixel electrodes are formed by diffusions in the silicon. The drive circuitry for addressing the light-modulating layer via the electrodes is provided in a second part of the semiconductor substrate to the side of the pixels. In this way a transmissive modulator is formed, since the electrodes are made of a material (silicon) transparent to the wavelength of the light used. The modulating effect is preferably doubled by reflecting the light back through the modulator with a mirror.