Abstract: A chronology display is generated for use with a web presentation or other form of network presentation. The chronology display may include a plurality of intervals, with each interval representative of a period of time. In an embodiment, some of the intervals may indicate a number of content items provided on the network presentation during the time period that corresponds to each particular interval. The indication may be provided by a characteristic, such as for example, a color or shading that represents the number of content items provided on the network presentation.

Abstract: A system and method for managing COTS devices based on device auto-detection and identification is provided. A network device on a managed network is identified, wherein the network device is identified as a one of a list of one or more network device types supported by the managed network and included in one or more configuration files, and wherein the one or more configuration files further include a list of one or more respective SNMP variables to be monitored for each of the network device types. The respective listing of SNMP variables to be monitored and/or configured is extracted from the one or more configuration files for the identified network device type. A request is then generated to monitor and/or configure the extracted SNMP variables to be monitored for the network device.

Abstract: A chronology display is generated for use with a web presentation or other form of network presentation. The chronology display may include a plurality of intervals, with each interval representative of a period of time. In an embodiment, some of the intervals may indicate a number of content items provided on the network presentation during the time period that corresponds to each particular interval. The indication may be provided by a characteristic, such as for example, a color or shading that represents the number of content items provided on the network presentation.

Abstract: A method of reducing moisture in a fluorine-containing gas is described. The method may include the steps of providing a purifier material that includes elemental carbon, and flowing the unpurified fluorine-containing gas having an unpurified moisture concentration over or through the carbon-based purifier material. At least a portion of the moisture is captured in the purifier material so that a purified fluorine-containing gas that emerges downstream of the purifier material has a reduced moisture concentration that is about 50% or less of the unpurified moisture concentration.

Abstract: Embodiments of the invention provide an electronic device which may include an interior compartment housing at least one electronic component that may be reactive to target impurities. The electronic component may include at least a cathode and an anode. A purifier material may be interspersed within a conducting polymer layer between the cathode and the anode. The purifier material may decrease target impurities within the interior compartment of the electronic device from a first level to a second level.

Abstract: Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: Embodiments provide for the creation of network pages or presentations that include pages on which programmatically selected/categorized content and manually-identified content from website users may be combined and displayed.

Abstract: The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: Embodiments provide for the creation of network pages or presentations that include pages on which programmatically selected/categorized content and manually-identified content from website users may be combined and displayed.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A polymerized polymeric material is provided within the vessel. The fluid is contacted with the polymerized polymeric material for take-up of the fluid by the polymerized polymeric material. The fluid is released from the polymerized polymeric material and dispensed from the vessel.

Abstract: Embodiments of the invention provide an electronic device which may include an interior compartment housing at least one electronic component that may be reactive to target impurities. The electronic component may include at least a cathode and an anode. A purifier material may be interspersed within a conducting polymer layer between the cathode and the anode. The purifier material may decrease target impurities within the interior compartment of the electronic device from a first level to a second level.

Abstract: An approach is provided for supporting retrieval of web content over a meshed communication network (111). A first server (105) receives a request from a browser application (103) for the content resident in the web server (109). The first server (105) includes a downstream proxy (401) configured to modify the request to include information specifying support of a parse and pre-fetch service within an optional header field of the request as to permit handling of the modified request by the web server (109) in absence of an upstream proxy (403) that is communicating with the web server (109). A second server (107) is configured as the upstream proxy (403) to intercept the modified request and pre-fetch the content from the web server (109). The second server (107) forwards the pre-fetched content over the communication network (111) to the first server (105). This approach has particular applicability in relatively high latency networks, such as a satellite communications system.

Abstract: Novel uses and methods of use for inorganic and macroreticulate polymer bonding to metals to control moisture and oxygen in OLED, and other like devices, are provided. Materials having color change capacity are also provided for the removal of moisture from an OLED, where the material changes color upon reaching its capacity and thereby signals the user that the OLED is no longer protected from moisture damage.

Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.

Abstract: Methods of cleaning a process chamber used to fabricate electronics components are described. The methods may include the step of providing a cleaning gas mixture to the process chamber, where the cleaning gas mixture may include a fluorine-containing precursor, and where the cleaning gas mixture removes contaminants from interior surfaces of the processing chamber that are exposed to the cleaning gas mixture. The methods may also include the steps of removing the reaction products of the cleaning gas mixture from the process chamber, and providing a substrate to the process chamber following the evacuation of the reaction products from the process chamber. The cleaning gas mixture may include one or more hydrofluoronated ethers, and the contaminants may include one or more tin-containing contaminants.

Abstract: Methods of removing gallium and gallium-containing materials from surfaces within a substrate processing chamber using a cleaning mixture are described. The cleaning mixture contains an iodine-containing compound and is introduced into the processing chamber. Iodine reacts with gallium resident within the chamber to produce thermally volatile Gal3. The Gal3 is removed using the exhaust system of the chamber by raising the temperature of the desorbing surface. Other volatile gallium-containing by-products may also be formed and removed from the exhaust system.

Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Abstract: Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an iodo-fluorocarbon precursor into a substrate processing system housing a substrate. The fluorocarbon precursor may have a F:C atomic ratio of about 2:1 or less, and the iodo-fluorocarbon may have a F:C ratio of about 1.75:1 to about 1.5:1. Exemplary precursors may include C4F6, C5F8 and C2F3I, among others. The substrate processing system may be configured to allow creation of a plasma useful for accelerating ions created in the plasma toward the substrate. The substrate may have regions of exposed silicon oxide and an overlying patterned photoresist layer which exposes narrow regions of silicon oxide. The etch process may remove the silicon oxide to a significant depth while maintaining a relatively constant width down the trench.

Abstract: Methods of cleaning a processing chamber with nitrogen trifluoride (NF3) are described. The methods involve a concurrent introduction of nitrogen trifluoride and a reactive diluent into the chamber. The NF3 may be excited in a plasma inside the chamber or in a remote plasma region upstream from the chamber. The reactive diluent may be introduced upstream or downstream of the remote plasma such that both NF3 and the reactive diluent (and any plasma-generated effluents) are present in the chamber during cleaning. The presence of the reactive diluent enhances the chamber-cleaning effectiveness of the NF3.