Abstract: Light-emitting diode (LED) chips and, more particularly, LED chips with light extraction films and related methods are disclosed. Light extraction films include antireflective structures that are integrated within LED chip structures. Antireflective structures include one or more antireflective layers positioned to reduce internal reflections at various internal interfaces of LED chips. Certain LED chip structures include antireflective structures positioned between epitaxially grown active LED structures and carrier substrates on which the active LED structures are supported. Wafer level bonding sequences with one or more bonding layers are disclosed that facilitate integration of antireflective structures within LED chip structures.

Abstract: Semiconductor devices and more particularly multiple junction light-emitting diode (LED) chips and related methods are disclosed. LED chips include multiple active LED structures that are bonded together. The active LED structures may be vertically bonded within the LED chip. Bonding layers are provided between active LED structures with sufficient thicknesses to maintain mechanical integrity within the LED chip. Bonding layers may be formed of electrically insulating materials with electrically conductive vias formed therethrough to provide electrically conductive paths between active LED structures. Active LED structures may be connected in series for high voltage applications. Emissions from the active LED structures may have same emission colors, multiple distinct emission colors, and/or variations in peak wavelengths within a same color range.

Abstract: Semiconductor devices and more particularly mounting structures for edge-emitting semiconductor devices are disclosed. Exemplary edge-emitting semiconductor devices include light-emitting diode (LED) edge emitters. Mounting structures include submounts with recesses configured to receive edge-emitting semiconductor devices such that emitting edges are positioned toward desired emission directions. Submount recesses are disclosed that include corresponding electrical connections for edge-emitting semiconductor devices. Multiple edge-emitting semiconductor devices are mechanically supported and electrically connected within a single recess or with multiple recesses. Corresponding devices are disclosed that include arrays of edge-emitting semiconductor devices in one or more recesses.

Abstract: The present disclosure describes a network switch design that includes a vertical switch circuit board that is mounted parallel to the front panel of the network switch. The vertical circuit board supports switch chip(s) to process and forward packets and pluggable module connectors to receive pluggable optics modules that provide connections to other network switches. The pluggable module connectors are horizontally oriented to facilitate routing of electrical signal traces. The arrangement of the circuit board, switch chip(s) and pluggable module connectors achieves reduced lengths for the electrical signal traces that connect the switch chip(s) to the pluggable module connectors. The design improves cooling by providing separate airflow regions between the switch chip heatsink(s) and the optics modules.

Abstract: Semiconductor devices and more particularly edge-emitting semiconductor devices and related methods are disclosed. Exemplary edge-emitting semiconductor devices include LED edge emitters. Electrical connections for edge-emitting devices may be provided along certain device edges with opposing edges forming light-emitting edges. LED edge emitters may be vertically arranged and assembled together to form LED arrays with reduced pitch. Related methods include bonding multiple wafer-level structures, such as LED wafers, together, followed by separation techniques that result in individual edge emitters or groupings of edge emitters in the form of LED arrays.

Abstract: Embodiments of a light-emitting diode (LED) device are disclosed. In some embodiments, the LED device includes a first LED device and one or more other LED devices mounted to the first LED device. By mounting the other LED devices to the first LED device, the LED devices are arranged in a stacked configuration. This allows for better light mixing of the light emitted by the various LED devices since the LED devices are at least partially aligned with one another. Different manners of stacking the LED devices are disclosed. The scope of the disclosure includes the specific embodiments disclosed as well as other combinations depending on the color mixing profile that is desired.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: Solid-state lighting devices, and more particularly, cover structures for beamshaping for multi-chip light emitting diode (LED) components are disclosed. The cover structure can reduce the far field emission pattern variation due to having different light emission sources on a multi-chip LED component. The cover structure can include channels, or tunnels, within an otherwise light-transmissive material that perform beamshaping of at least a portion of the light emitted from the multiple LED chips. The beamshaping can be a result of a predetermined orientation and/or distribution pattern of the channels that redirect the light. The cover structure can also include textured surfaces or light-altering materials that can further diffuse the light emitted from the multi-chip LED component.

Abstract: The present disclosure describes a network switch design that includes a vertical switch circuit board that is mounted parallel to the front panel of the network switch. The vertical circuit board supports switch chip(s) to process and forward packets and pluggable module connectors to receive pluggable optics modules that provide connections to other network switches. The pluggable module connectors are horizontally oriented to facilitate routing of electrical signal traces. The arrangement of the circuit board, switch chip(s) and pluggable module connectors achieves reduced lengths for the electrical signal traces that connect the switch chip(s) to the pluggable module connectors. The design improves cooling by providing separate airflow regions between the switch chip heatsink(s) and the optics modules.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages for environmental indication are disclosed. LED packages include one or more LED chips and reactive materials that preferentially react with environmental ingress. After sufficient reactant exposure, the reactive materials may degrade and exhibit reduced electrical conductivity. Reactive material arrangements relative to electrical connections are provided so that the one or more LED chips either turn on, turn off, or lose brightness to provide visual indication of environmental reactants. Reactive materials may form electrical shorting paths that bypass one or more LED chips until sufficient reactant exposure when the shorting paths fail and the one or more LED chips are electrically activated.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages with materials for reducing effects of environmental ingress are disclosed. Reactive materials are provided within LED packages that preferentially absorb environmental ingress away from other package elements, thereby extending operating lifetimes. Such reactive materials may be configured with redox potentials that are lower than the other package elements to more readily attract and react with environmental ingress that may enter LED packages under various operating environments. Arrangements of reactive materials are described relative to LED chips and corresponding electrical connections. Reactive materials may be formed as coatings, layers, pre-formed structures, and/or distributions of particles within LED packages.

Abstract: Solid-state lighting devices, and more particularly, a multiple-layered cover structure for beamshaping for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include the cover structures that have more than one layer, each with different index of refractions and/or shapes in order to provide more finely tuned beamshaping than would be possible with a cover structure formed from a single layer of silicone. The cover structure can cover a side and a top of an LED chip and include an inner layer with a first refractive index that covers at least a top of the LED chip, and an outer layer with second refractive index. The cover structure also includes lumiphoric material, either in one of the inner or outer layer, or in a separate layer. The inner and outer layers can be of different shapes to result in an emission with desired characteristics.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: A contact force sensing device may be configured to mate with a port connector having a plurality of conductive contact structures. The contact force sensing device may include a base and a force sensor on the base. The force sensor may be configured to measure a force applied by a first conductive contact structure in the plurality of conductive contact structures using a sensor probe that contacts the first conductive contact structure when the sensor probe is inserted into the port connector. The contact force sensing device may include a mating connector surrogate structure that flanks the sensor probe and is configured to contact at least a second conductive contact structure in the plurality of conductive contact structures when the sensor probe contacts the first conductive contact structure.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly material arrangements in cover structures for LEDs that tailor light emissions are disclosed. Material arrangements include light-filtering particles or ionic species that are integrated within materials of covers structures that cover LED chips within LED packages. Light-filtering materials may be configured to selectively filter one or more portions of light provided by LED chips and/or lumiphoric materials within LED packages. Dispersing light-filtering materials within covers structures provides protection and mechanical support for the light-filtering materials. Additionally, arrangements and concentrations of light-filtering materials within cover structures may be varied horizontally and/or vertically to tailor emission patterns of corresponding LED packages. Material arrangements include light-filtering species incorporated at an atomic level within cover structures.

Abstract: Lighting-emitting devices and more particularly light-emitting diode (LED) chips with multiple wavelength emissions and related methods are disclosed. LED chips include separately formed active LED structures that are bonded together to form a single LED chip capable of emitting multiple wavelengths. Each active LED structure may be separately patterned into a number of individual light-emitting junctions such that after bonding, a single LED chip includes multiple light-emitting junctions from multiple active LED structures. Patterns of individual light-emitting junctions may be selected so that when bonded together, emissions from different active LED structures may pass through LED chips with reduced interactions with one another. Certain aspects include vertical and horizontal offset positions for light-emitting junctions formed from different active LED structures.

Abstract: Solid-state lighting devices, and more particularly to laser etching light-emitting diode (LED) devices and related methods are disclosed. LED devices that use sapphire substrates are difficult to etch using conventional techniques, but laser etching and ablation of sapphire substrates overcomes these challenges. Laser etching a surface of the sapphire substrate can form light-extraction features that include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. In some embodiments, laser ablation of the sapphire substrate can also be used to form trenches between active layer portions of an LED matrix to form pixels that reduce interference between the active layer portions.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric particle structures in wavelength conversion elements for LEDs and related methods are disclosed. Lumiphoric particle structures include coatings that provide improved optical, mechanical, and/or thermal characteristics when distributed within host materials of wavelength conversion elements. Coatings are pre-formed on lumiphoric particles before the lumiphoric particles are integrated with wavelength conversion elements. Heat treatments associated with firing wavelength conversion elements may diffuse coating materials within wavelength conversion elements to form graded material structures for further improvements to optical, mechanical, and/or thermal characteristics.