Abstract: Disclosed is an integrated circuit (IC) comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising at least one sensor electrode portion (20) and a bond pad portion (22), at least the at least one sensor electrode portion of said patterned upper metallization layer being covered by a moisture barrier film (23); a passivation stack (24, 26, 28) covering the metallization stack, said passivation stack comprising a first trench (32) exposing the at least one sensor electrode portion and a second trench (34) exposing the bond pad portion; said first trench being filled with a sensor active material (36). A method of manufacturing such an IC is also disclosed.

Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.

Abstract: Disclosed is an integrated circuit comprising an electrode arrangement for detecting the presence of a liquid, said electrode arrangement comprising a first electrode and a second electrode, wherein, prior to exposure of the electrode arrangement to said liquid, a surface of at least one of the first electrode and second electrode is at least partially covered by a compound that is soluble in the liquid; the electrical properties of the electrode arrangement being dependent on the amount of the compound covering said surface. An package and electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.

Abstract: A sensor comprising a silicon substrate having a first and a second surface, integrated circuitry provided on the first surface of the silicon substrate, and a sensor structure provided on the second surface of the silicon substrate. The sensor structure and the integrated circuitry are electrically coupled to each other.

Abstract: One example discloses a breach sensor, comprising: a substrate including an integrated circuit; a passivation layer coupled to the substrate; a breach sensing element coupled to the circuit; wherein the breach sensing element is on a first side of the passivation layer and the substrate is on a second side of the passivation layer; a barrier configured to separate the breach sensing element from an ambient environment; wherein the breach sensing element is responsive to barrier damage.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes an electrical impedance based gas sensor located on the substrate. The sensor includes first and second electrically conductive sensor electrodes. Each sensor electrode is enclosed in an electrically conductive corrosion protection material. The sensor also includes a gas sensitive material located between the sensor electrodes. The impedance of the gas sensitive material is sensitive to a gas to be sensed.

Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.

Abstract: One example discloses an chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height.

Abstract: In one example, a thermal conductivity gas sensor is disclosed. The sensor includes a sensing element and an amplification material coupled to the sensing element. The amplification material has a target gas dependent thermal diffusivity. The sensing element measures the thermal diffusivity of the amplification material to determine a target gas concentration.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a directional light sensor. The directional light sensor includes a plurality of photodetectors located on the major surface. The directional light sensor also includes one or more barriers, wherein each barrier is positioned to shade one or more of the photodetectors from light incident upon the integrated circuit from a respective direction. The directional light sensor is operable to determine a direction of light incident upon the integrated circuit by comparing an output signal of at least two of the photodetectors.

Abstract: Disclosed is an integrated circuit comprising a substrate carrying a plurality of circuit elements; a metallization stack interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion; a passivation stack covering the metallization stack; and a sensor including a sensing material on the passivation stack, said sensor being coupled to the first metal portion by a via extending through the passivation stack. A method of manufacturing such an IC is also disclosed.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes a relative humidity sensor on the substrate. The relative humidity sensor includes a first sensor electrode, a second sensor electrode, and a humidity sensitive layer covering the first and second electrodes. The integrated circuit further includes a thermal conductivity based gas sensor on the substrate. The thermal conductivity based gas sensor has an electrically resistive sensor element located above the humidity sensitive layer.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20); a passivation stack (24, 26, 28) covering the metallization stack; and a sensor including a sensing material (40) on the passivation stack, said sensor being coupled to the first metal portion by a via (34) extending through the passivation stack. A method of manufacturing such an IC is also disclosed.

Abstract: A biocompatible electrode is manufactured by depositing filling metal 36 and etching back the filling metal to the surface of the surrounding insulator 30. Then, a further etch forms a recess 38 at the top of the via 32. An electrode metal 40 is then deposited and etched back to fill the recess 38 and form biocompatible electrode 42. In this way, a planar biocompatible electrode is achieved. The step of etching to form the recess may be carried out in the same CMP tool as is used to etch back the filling metal 36. A hydrogen peroxide etch may be used.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.

Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12?) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.

Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12?) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.

Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

Abstract: In one example, a thermal conductivity gas sensor is disclosed. The sensor includes a sensing element and an amplification material coupled to the sensing element. The amplification material has a target gas dependent thermal diffusivity. The sensing element measures the thermal diffusivity of the amplification material to determine a target gas concentration.