Abstract: An image signal processing system (ISP) comprising an input interface (IN) for receiving photon counting projection data acquired by an X-ray imaging apparatus (IA) having a photon counting detector (D). A calibration data memory (CMEM) of the system holds calibration data. The calibration data encodes photon counting data versus path lengths curves for different energy thresholds of i) said detector (D) or ii) of a different detector. At least one of said curves is not one-to-one. A path length convertor (PLC) of the system converts an entry in said photon counting projection data into an associated path length based on said calibration data.

Abstract: An image signal processing system (ISP) comprising an input interface (IN) for receiving photon counting projection data acquired by an X-ray imaging apparatus (IA) having a photon counting detector (D). A calibration data memory (CMEM) of the system holds calibration data. The calibration data encodes photon counting data versus path lengths curves for different energy thresholds of i) said detector (D) or ii) of a different detector. At least one of said curves is not one-to-one. A path length convertor (PLC) of the system converts an entry in said photon counting projection data into an associated path length based on said calibration data.

Abstract: In the present invention a direct X-ray conversion layer comprises a material having a perovskite crystal structure. This is preferable since this enables constructing an X-ray detector with edge-on illuminated detector elements.

Abstract: In the present invention a direct X-ray conversion layer comprises a material having a perovskite crystal structure. This is preferable since this enables constructing an X-ray detector with edge-on illuminated detector elements.

Abstract: An apparatus includes an integrator (120) that produces a pulse having a peak amplitude indicative of the energy of a detected photon. First discharging circuitry (136) discharges the integrator (120) at a first discharging speed, and second discharging circuitry (124) discharges the integrator (120) at a second discharging speed. The first discharging speed is less than the second discharging speed.

Abstract: A radiation detector assembly (20) includes a detector array module (40) configured to convert radiation particles to electrical detection pulses, and an application specific integrated circuit (ASIC) (42) operatively connected with the detector array. The ASIC includes signal processing circuitry (60) configured to digitize an electrical detection pulse received from the detector array, and test circuitry (80) configured to inject a test electrical pulse into the signal processing circuitry. The test circuitry includes a current meter (84) configured to measure the test electrical pulse injected into the signal processing circuitry, and a charge pulse generator (82) configured to generate a test electrical pulse that is injected into the signal processing circuitry.

Abstract: It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon.

Abstract: The invention is directed at an apparatus (10), an imaging device and a method for detecting X-ray photons, in particular photons (32,34) in a computer tomograph. Photons (32,34) are converted into an electrical pulse and compared against a threshold using a discriminator (20). The electrical network (12) performing these functions comprises a switching element (28), that can modify the electrical path (22) along which the process signals travel. The trigger signal (VT) for actuating the switching element (28) is derived from an electrical state of the electrical path (22). If a pulse associated to a photon (32,34) is detected, the switching element (28) is actuated in order to avoid that the processing of the charge pulse stemming from a first photon (32) is affected by a subsequent second photon (34).

Abstract: An imaging system includes a scintillator array (202) and a digital photomultiplier array (204). A photon counting channel (212), an integrating channel (210), and a moment generating channel (214) process the output signal of the digital photomultiplier array (204). A reconstructor (122) spectrally resolves the first, the second and the third output signals. In one embodiment, a controller (232) activates the photon counting channel (212) to process the digital signal only if a radiation flux is below a predetermined threshold. An imaging system includes at least one direct conversion layer (302) and at least two scintillator layers (304) and corresponding photosensors (306). A photon counting channel (212) processes an output of the at least one direct conversion layer (302), and an integrating channel (210) and a moment generating channel (214) process respective outputs of the photosensors (306). A reconstructor (122) spectrally resolves the first, the second and the third output signals.

Abstract: The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator.

Abstract: A radiation detector assembly (20) includes a detector array module (40) configured to convert radiation particles to electrical detection pulses, and an application specific integrated circuit (ASIC) (42) operatively connected with the detector array. The ASIC includes signal processing circuitry (60) configured to digitize an electrical detection pulse received from the detector array, and test circuitry (80) configured to inject a test electrical pulse into the signal processing circuitry. The test circuitry includes a current meter (84) configured to measure the test electrical pulse injected into the signal processing circuitry, and a charge pulse generator (82) configured to generate a test electrical pulse that is injected into the signal processing circuitry.

Abstract: An imaging system includes a scintillator array (202) and a digital photomultiplier array (204). A photon counting channel (212), an integrating channel (210), and a moment generating channel (214) process the output signal of the digital photomultiplier array (204). A reconstructor (122) spectrally resolves the first, the second and the third output signals. In one embodiment, a controller (232) activates the photon counting channel (212) to process the digital signal only if a radiation flux is below a predetermined threshold. An imaging system includes at least one direct conversion layer (302) and at least two scintillator layers (304) and corresponding photosensors (306). A photon counting channel (212) processes an output of the at least one direct conversion layer (302), and an integrating channel (210) and a moment generating channel (214) process respective outputs of the photosensors (306). A reconstructor (122) spectrally resolves the first, the second and the third output signals.

Abstract: Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.

Abstract: The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology.

Abstract: The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator.

Abstract: Recently, the use of class D audio amplifiers has become more and more widespread. In contrast to the generally employed class A-B linear amplification technology, class D allows for improved efficiency. However, the class D principle is known for its poor distortion characteristics. According to the present invention, a digital amplifier is provided for converting an input signal to a power output. The digital amplifier according to the present invention comprises a supply ripple pre-compensation circuit for compensating voltage ripples on a supply voltage supplied to bridge circuits of the digital amplifier on the basis of the input signal. By this, supply ripples in the supply voltage supplied to the bridge which have been found to cause a major part of the distortions in the output signal of the digital amplifier may be compensated.

Abstract: An apparatus includes a scale factor determiner (236) that determines a count scale factor based on a measured count of a number detected photons for an energy threshold and an estimated actual count of the number of detected photons. The photons include poly-energetic photons detected by a radiation sensitive detector. The apparatus further includes a count sealer (136) that employs the count scale factor to scale measured counts of detected photons for different energy thresholds.

Abstract: An apparatus includes an integrator (120) that produces a pulse having a peak amplitude indicative of the energy of a detected photon. First discharging circuitry (136) discharges the integrator (120) at a first discharging speed, and second discharging circuitry (124) discharges the integrator (120) at a second discharging speed. The first discharging speed is less than the second discharging speed.

Abstract: Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.

Abstract: The invention relates to a radiation detector, particularly an X-ray detector (100), comprising a counting circuitry (10, 20, 30) for counting electrical pulses generated by the (sub-)pixels (2) of the detector. In the counting circuitry, the results counted by a fast counting stage (10) are at intervals transferred to a slow counting stage (20). The fast counting stage (10) may for example comprise a fast counter (111) with a low bit-depth operating as a frequency divider in front of a slow counter (121) of high bit-depth in the slow counting stage (20). The counting circuitry (10, 20, 30) can optionally be fed via a multiplexer (4) with the signals of several (sub-)pixels (2). Furthermore, the pixels (1, 2) of the radiation device may optionally deliver energy resolved pulses.