Abstract: A nonwoven web material including fibers formed of a polyolefin and a polyester is disclosed. The fibers may include fine fibers produced by, for example, a meltblowing process. The polyolefin may be polypropylene and the polyester may be polylactic acid. The polylactic acid may be obtained and included by recycling scrap nonwoven material containing a polylactic acid component, hydrolyzing the polylactic acid component to reduce its viscosity, blending the hydrolyzed polylactic acid with a polyolefin resin, and melt-spinning the blended material to form fibers. A related process is disclosed.

Abstract: A device (10,110) for lifting a structure (59) having an aperture (62) therein, the device (10,110) including a body (12, 112) adapted to locate the device (10,110) relative to the aperture (62) of the structure (59) and a pin (18, 118) moveably receivable by a bore (16, 116) of the body (12, 112), the pin (18, 118) including a foot (22, 122) which is arranged to pass through the aperture (62) of the structure (59) in a first orientation and be rotated to a second orientation such that the foot (22, 122) is engagable with the aperture (62) of the structure (59).

Abstract: A nonwoven web material including fibers formed of a polyolefin and a polyester is disclosed. The fibers may include fine fibers produced by, for example, a meltblowing process. The polyolefin may be polypropylene and the polyester may be polylactic acid. The polylactic acid may be obtained and included by recycling scrap nonwoven material containing a polylactic acid component, hydrolyzing the polylactic acid component to reduce its viscosity, blending the hydrolyzed polylactic acid with a polyolefin resin, and melt-spinning the blended material to form fibers. A related process is disclosed.

Abstract: Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.

Abstract: Visor injectors include a gas injector port, internal sidewalls, and at least two ridges for directing gas flow through the visor injectors. Each of the ridges extends from a location proximate a hole in the gas injector port toward a gas outlet of the visor injector and is positioned between the internal sidewalls. Deposition systems include a base with divergently extending internal sidewalls, a gas injection port, a lid, and at least two divergently extending ridges for directing gas flow through a central region of a space at least partially defined by the internal sidewalls of the base and a bottom surface of the lid. Methods of forming a material on a substrate include flowing a precursor through such a visor injector and directing a portion of the precursor to flow through a central region of the visor injector with at least two ridges.

Abstract: Processes for making fibrous structures and more particularly processes for making fibrous structures comprising filaments are provided.

Abstract: A fuel monitoring device for a vehicle having one or more fuel tank sensors, the fuel monitoring device comprising a control module in communication with the or each fuel tank sensor, wherein the control module is operable to receive data from the or each fuel tank sensor and operable to output fuel level related data to a mobile communications system transmitter for transmission to an end user. The fuel monitoring device may be installed covertly within a vehicle and communicate with the vehicle's fuel tank sensor and, optionally, further sensors. The fuel monitoring device facilitates the transmission of information to an end user allowing the end user to identify occurrences of fuel theft from a remote location and/or the fuel monitoring device is operable to generate an alarm condition in or in the proximity of the vehicle.

Abstract: A micro-fluidic system comprising means for optically trapping a particle and a Raman excitation source for causing Raman scatter from the particle while it is in the optical trap.

Abstract: Processes for making fibrous structures and more particularly processes for making fibrous structures comprising filaments are provided.

Abstract: Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semiconductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising III-nitride semiconductor material are formed by such methods.

Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: The present invention relates to materials and methods for protecting man-made structures made with non-wood materials from termite damage through the application of borates to the surface of non-wood materials. In an embodiment the invention regards a method for preventing termite tunneling and tubing on non-wood and/or non-cellulosic materials by treating non-wood building components comprising the steps of applying a composition to the surfaces of a non-wood building component, wherein the composition comprises a borate component. In another embodiment the invention regards a method for preventing termite damage to man-made structures comprising the steps of mixing borates with a solvent to form a borate solution, obtaining a non-wood building component, coating the non-wood building component with the borate solution, and incorporating the coated non-wood building component into a man-made structure.

Abstract: Disposable article that include fibers formed from compositions comprising thermoplastic polymers and waxes are disclosed, where the wax is dispersed throughout the thermoplastic polymer.

Abstract: A video apparatus such as a television signal receiver enables a video display that readily indicates the detected degree of a video attribute such as motion and/or other video attribute present in the video display. According to an exemplary embodiment, the video apparatus includes first circuitry operative to receive video data. Second circuitry is operative to enable a video display corresponding to the video data. The video display includes first and second video attributes. The first video attribute varies in proportion to a detected degree of the second video attribute.

Abstract: This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g.

Abstract: Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

Abstract: Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.

Abstract: Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.

Abstract: Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

Abstract: Processes and systems are used to reduce undesired deposits within a reaction chamber associated with a semiconductor deposition system. A cleaning gas may be caused to flow through at least one gas flow path extending through at least one gas furnace, and the heated cleaning gas may be introduced into a reaction chamber to remove at least a portion of undesired deposits from within the reaction chamber.