Abstract: This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.

Abstract: Disposable article that include fibers formed from compositions comprising thermoplastic polymers and waxes are disclosed, where the wax is dispersed throughout the thermoplastic polymer.

Abstract: The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: Methods of depositing compound semiconductor materials on one or more substrates include metering and controlling a flow rate of a precursor liquid from a precursor liquid source into a vaporizer. The precursor liquid may comprise at least one of GaCl3, InCl3, and AlCl3 in a liquid state. The precursor liquid may be vaporized within the vaporizer to form a first precursor vapor. The first precursor vapor and a second precursor vapor may be caused to flow into a reaction chamber, and a compound semiconductor material may be deposited on a surface of a substrate within the reaction chamber from the precursor vapors. Deposition systems for performing such methods include devices for metering and/or controlling a flow of a precursor liquid from a liquid source to a vaporizer, while the precursor liquid remains in the liquid state.

Abstract: Deposition systems include a reaction chamber, a substrate support structure disposed within the chamber for supporting a substrate within the reaction chamber, and a gas input system for injecting one or more precursor gases into the reaction chamber. The gas input system includes at least one precursor gas furnace disposed at least partially within the reaction chamber. Methods of depositing materials include separately flowing a first precursor gas and a second precursor gas into a reaction chamber, flowing the first precursor gas through at least one precursor gas flow path extending through at least one precursor gas furnace disposed within the reaction chamber, and, after heating the first precursor gas within the at least one precursor gas furnace, mixing the first and second precursor gases within the reaction chamber over a substrate.

Abstract: Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

Abstract: An exemplary embodiment of the present invention relates to an electrostatic discharge/electromagnetic interference (ESD/EMI) protection circuit for an integrated circuit. The ESD/EMI protection circuit comprises an input that is adapted to receive a communication signal, a Zener diode pair connected between the input and a ground that is shared with the input, a resistor coupled to the input, and a capacitor coupled in series with the resistor between the input and the integrated circuit.

Abstract: One embodiment of such a method of assisting a driver of a vehicle comprises receiving a command from the driver attesting that the driver has performed one of a plurality of driving requisites; in response to receipt of the command, presenting an audible cue commending the driver for performing one of the plurality of driving requisites; tracking an amount of time that elapses before the command attesting to performance of a respective driving requisite is received; and in response to the amount of time exceeding a threshold for the respective driving requisite, presenting an audible cue intending to remind the driver about the respective driving requisite being tracked that has exceeded the respective threshold.

Abstract: This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: A wide variety of pharmaceutically and commercially acceptable dosage forms of ketoprofen are prepared by dissolving ketoprofen in pharmaceutically acceptable solvents.

Abstract: An apparatus and method for mapping a water pathway. A group of sensors can be employed for detecting one or more features associated with the water pathway in a direction of flow through the water pathway. A buoyant vessel maintains the sensors, and the sensors assist in compiling data indicative of the detected features. The velocity in the direction of flow through the water pathway can be then determined based on data indicative of the detected feature(s). A mapping of the water pathway can be thereafter generated utilizing the velocity with respect to the features detected by the sensors.

Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

Abstract: Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation.

Abstract: The present invention provides improved gas injectors for use with chemical vapour deposition (CVD) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

Abstract: A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.

Abstract: A metal matrix composites is used to laser clad a surface, such as a base metal machine element, and provide high wear and corrosion resistance, particularly useful for protecting surfaces in a salt water environment. The composites may comprise up to 25 wt % Mo and up to 20 wt % WC particles in a Nickel Alloy matrix; a nickel Alloy containing 5-30% Chromium, 0-20% Molybdenum, and 0-10% Tungsten or Niobium, with the balance being Nickel.

Abstract: There is provided a system and/or method of monitoring media content. More specifically, in one embodiment, there is provided a method of monitoring operation of an electronic device having a plurality of signal inputs, the method comprising periodically collecting images from each of the plurality of signal inputs, storing the collected images for later evaluation if an image storage option is enabled, and sending the collected images for direct viewing if the image storage option is not enabled.

Abstract: One embodiment of such a method of assisting a driver of a vehicle comprises receiving a command from the driver attesting that the driver has performed one of a plurality of driving requisites; in response to receipt of the command, presenting an audible cue commending the driver for performing one of the plurality of driving requisites; tracking an amount of time that elapses before the command attesting to performance of a respective driving requisite is received; and in response to the amount of time exceeding a threshold for the respective driving requisite, presenting an audible cue intending to remind the driver about the respective driving requisite being tracked that has exceeded the respective threshold.