Abstract: A fuel monitoring device for a vehicle having one or more fuel tank sensors, the fuel monitoring device comprising a control module in communication with the or each fuel tank sensor, wherein the control module is operable to receive data from the or each fuel tank sensor and operable to output fuel level related data to a mobile communications system transmitter for transmission to an end user. The fuel monitoring device may be installed covertly within a vehicle and communicate with the vehicle's fuel tank sensor and, optionally, further sensors. The fuel monitoring device facilitates the transmission of information to an end user allowing the end user to identify occurrences of fuel theft from a remote location and/or the fuel monitoring device is operable to generate an alarm condition in or in the proximity of the vehicle.

Abstract: The invention provides an improved CVD reactor sub-system including a modular reactor enclosure and function modules. The modular reactor enclosure can accommodate a commercially available cold-wall CVD reactor chamber, and the function modules can be arranged on the reactor enclosure to provide functions necessary to perform a CVD process with the reactor chamber. Preferred function modules include modules for providing heat to a CVD reactor chamber and modules for measuring conditions internal to a CVD reactor chamber. The invention also provides methods for configuring such a CVD reactor sub-system, in particular configuring the sub-system to best perform a particular CVD process, and kits for performing such configuring. Advantageously, the invention allows a single CVD reactor sub-system to be reconfigured and rearranged so that it can best perform a number of different CVD processes.

Abstract: An apparatus and method for mapping a water pathway. A group of sensors can be employed for detecting one or more features associated with the water pathway in a direction of flow through the water pathway. A buoyant vessel maintains the sensors, and the sensors assist in compiling data indicative of the detected features. The velocity in the direction of flow through the water pathway can be then determined based on data indicative of the detected feature(s). A mapping of the water pathway can be thereafter generated utilizing the velocity with respect to the features detected by the sensors.

Abstract: This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.

Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: A dispersible fibrous structure having an in-use wet tensile strength of at least about 40 g/cm; a disposable wet tensile decay of at least about 35% and a method of making the structure. The structure has at least one property selected from a group consisting of: a wet CD maximum slope of less than about 12 kg/7.62 cm, a wet CD Elongation of greater than about 50%, a low elongation CD modulus of less than about 5.0 kg/7.62 cm, and a wet CD Bending of less than about 0.05 gf cm/cm.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and apparatus for in-situ removal of undesired deposits in the interiors of reactor chambers, for example, on chamber walls and elsewhere. The invention provides methods according to which cleaning steps are integrated and incorporated into a high-throughput growth process. Preferably, the times when growth should be suspended and cleaning commenced and when cleaning should be terminated and growth resumed are automatically determined based on sensor inputs. The invention also provides reactor chamber systems for the efficient performance of the integrated cleaning/growth methods of this invention.

Abstract: A connector assembly is provided having a cable end plug with a body adapted to be connected to a cable with a connector part, and at least one outwardly extending flange on the body. A mating receptacle receives the cable end plug. The receptacle has a body with a complementary connector part to the cable end plug connector part. A retention clip is connected to the receptacle body, and includes at least one spring arm extending outwardly therefrom with a distal entry ramp portion, a retaining shoulder portion and a flange receiving portion. A thickness of the flange is approximately equal to a depth of the flange receiving portion so that the retaining shoulder portion engages behind the flange in a connected position of the cable end plug in the mating receptacle. For release, the retaining shoulder can be set at an angle of at least 94° to the flange receiving portion to form a release ramp that allows disengagement when a sufficiently high predetermined release force is applied to the cable end plug.

Abstract: A connector assembly is provided having a cable end plug with a body adapted to be connected to a cable with a connector part, and at least one outwardly extending flange on the body. A mating receptacle receives the cable end plug. The receptacle has a body with a complementary connector part to the cable end plug connector part. A retention clip is connected to the receptacle body, and includes at least one spring arm extending outwardly therefrom with a distal entry ramp portion, a retaining shoulder portion and a flange receiving portion. A thickness of the flange is approximately equal to a depth of the flange receiving portion so that the retaining shoulder portion engages behind the flange in a connected position of the cable end plug in the mating receptacle. For release, the retaining shoulder can be set at an angle of at least 94° to the flange receiving portion to form a release ramp that allows disengagement when a sufficiently high predetermined release force is applied to the cable end plug.

Abstract: Sorbents for removal of mercury and other pollutants from gas streams, such as a flue gas stream from coal-fired utility plants, and methods for their manufacture and use are disclosed. The methods include mixing sorbent substrate particles with a sulfide salt and a metal salt to form a metal sulfide on the outer surface of the sorbent particles.

Abstract: An exemplary embodiment of the present invention relates to an electrostatic discharge/electromagnetic interference (ESD/EMI) protection circuit for an integrated circuit. The ESD/EMI protection circuit comprises an input that is adapted to receive a communication signal, a Zener diode pair connected between the input and a ground that is shared with the input, a resistor coupled to the input, and a capacitor coupled in series with the resistor between the input and the integrated circuit.

Abstract: A micro-fluidic system comprising means for optically trapping a particle and a Raman excitation source for causing Raman scatter from the particle whilst it is in the optical trap.

Abstract: The present invention relates to materials and methods for protecting man-made structures made with non-wood materials from termite damage through the application of borates to the surface of non-wood materials. In an embodiment the invention regards a method for preventing termite tunneling and tubing on non-wood and/or non-cellulosic materials by treating non-wood building components comprising the steps of applying a composition to the surfaces of a non-wood building component, wherein the composition comprises a borate component. In another embodiment the invention regards a method for preventing termite damage to man-made structures comprising the steps of mixing borates with a solvent to form a borate solution, obtaining a non-wood building component, coating the non-wood building component with the borate solution, and incorporating the coated non-wood building component into a man-made structure.

Abstract: The present invention relates to materials and methods for protecting man-made structures made with non-wood materials from termite damage through the application of borates to the surface of non-wood materials. In an embodiment the invention regards a method for preventing termite tunneling and tubing on non-wood and/or non-cellulosic materials by treating non-wood building components comprising the steps of applying a composition to the surfaces of a non-wood building component, wherein the composition comprises a borate component. In another embodiment the invention regards a method for preventing termite damage to man-made structures comprising the steps of mixing borates with a solvent to form a borate solution, obtaining a non-wood building component, coating the non-wood building component with the borate solution, and incorporating the coated non-wood building component into a man-made structure.

Abstract: The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract: Methods of manufacturing bentonite sorbents for removal of pollutants including mercury from gas streams, such as a flue gas stream from coal-fired utility plants are disclosed. The methods include mixing bentonite sorbent particles with a sulfide salt and a metal salt to form a metal sulfide on the outer surface of the bentonite sorbent particles.

Abstract: A magnetic heater is provided having a conductive member and a first magnet assembly comprising a frame and at least one magnet disposed a distance adjacent the conductive member, wherein the first magnet assembly and the first frame are adapted to rotate relative to each other about an axis so as to induce eddy currents in the conductive member when relative motion is produced between the conductive member and the first magnet assembly, the at least one magnet adapted to move relative to the frame in dependence on the change in the rate of rotation of the frame. The magnetic heater is provided with a passive relative-positioning actuator adapted to move one or more magnets in an axial direction and a radial direction relative to the frame. Such movement is exploited to control the magnetic field strength at the conductive member by controlling, among other things, the conductor/magnet spacing.

Abstract: A method and apparatus for removing contaminants from a fluid are disclosed. The fluid is introduced into a decontamination chamber such that the fluid is cooled and contaminants fall out within the decontamination chamber, producing a purified fluid. The purified fluid is then retrieved and can be used in a supercritical processing system.

Abstract: This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g.

Abstract: A dispersible fibrous structure having an in-use wet tensile strength of at least about 40 g/cm; a disposable wet tensile decay of at least about 35% and a method of making the structure. The structure has at least one property selected from a group consisting of: a wet CD maximum slope of less than about 12 kg/7.62 cm, a wet CD Elongation of greater than about 50%, a low elongation CD modulus of less than about 5.0 kg/7.62 cm, and a wet CD Bending of less than about 0.