Patents by Inventor Rong Chen

Rong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12291306
    Abstract: A clipless pedal device is provided, including a pedal body; an engagement portion; a retaining portion, disposed on the pedal body and being movable between a lock position and a release position; a push portion, driven by the retaining portion to move along a pushing path; wherein when a cleat is engaged between the engagement portion and the retaining portion, the cleat is located on the pushing path; while the retaining portion is moved from the lock position to the release position, the push portion is moved along the pushing path to push the cleat.
    Type: Grant
    Filed: December 11, 2023
    Date of Patent: May 6, 2025
    Assignee: WELLGO PEDAL'S CORP.
    Inventor: Chun-Rong Chen
  • Publication number: 20250134983
    Abstract: A viral vector delivery system for both respiratory and digestive tracts of pigs and an application thereof are provided. The viral vector delivery system includes a backbone plasmid and a helper plasmid. The backbone plasmid is produced by inserting a full-length cDNA of porcine enterovirus B (PEVB) into a pUC57 plasmid. The helper plasmid is produced by inserting a green fluorescent protein-coding gene into a plasmid pCAG-T7-polymerase. The viral vector delivery system can be constructed with high efficiency, can quickly cause a cytopathic effect (CPE) after infecting cells, has a viral titer up to 107.75 TCID50/mL, and can maintain high stability. A pathogenic epitope for the respiratory and digestive tracts of pigs is inserted into the backbone plasmid to produce a vaccine antigen, which is non-pathogenic, has high stability and a high viral titer, and allows a prominent immunization effect after being inoculated in pigs.
    Type: Application
    Filed: January 8, 2025
    Publication date: May 1, 2025
    Applicants: JIANGSU ACADEMY OF AGRICULTURAL SCIENCES, SNU R&DB FOUNDATION, GUOTAI (TAIZHOU) CENTER OF TECHNOLOGY INNOVATION FOR VETERINARY BIOLOGICALS, TAIZHOU
    Inventors: Xing XIE, Zhixin FENG, Daesub SONG, Rong CHEN, Fei HAO, Lulu XU, Minjoo YEOM, Jongwoo LIM, Lei ZHANG, Yuan GAN, Long ZHAO, Wenliang LI, Qiyan XIONG, Yongjie LIU, Beibei LIU, Yanfei YU, Yun BAI, Guoqing SHAO
  • Patent number: 12282074
    Abstract: The present invention relates to the technical field of maglev transportation, specifically revealing a method and apparatus for measuring magnetic field intensity in high-temperature superconducting maglev transportation systems.
    Type: Grant
    Filed: April 25, 2024
    Date of Patent: April 22, 2025
    Assignee: Southwest Jiaotong University
    Inventors: Rong Chen, Ping Wang, Tao Lv, Jingmang Xu, Zhou Xu, Kai Liu, Min Xue
  • Patent number: 12265066
    Abstract: Provided are an imaging method and system for residual stress of a basin insulator and a method for preparing a test block. The imaging method includes cutting and preparing a standard industrial sample of a basin insulator and testing the acoustoelastic coefficient of the standard industrial sample; then obtaining the residual stress data of the basin insulator and obtaining the spatial point sound velocity distribution of the basin insulator; finally, obtaining a stress distribution cloud map of the basin insulator by calculation of the attribute value and the coordinate data of a to-be-measured location, and performing reliability verification based on the residual stress data.
    Type: Grant
    Filed: October 8, 2023
    Date of Patent: April 1, 2025
    Assignees: ELECTRIC POWER SCIENCE &RESEARCH INSTITUTE OF STATE GRID TIANJIN ELECTRIC POWER COMPANY, STATE GRID TIANJIN ELECTRIC POWER COMPANY, STATE GRID CORPORATION OF CHINA
    Inventors: Jin He, Chun He, Songyuan Li, Qinghua Tang, Chi Zhang, Rong Chen, Qi Zhao, Jin Li, Xiaobo Song, Yue Han, Meng Cao, Lin Li, Suya Li, Yanwei Dong, Zhengzheng Meng
  • Publication number: 20250072095
    Abstract: A terminal structure with optimized reliability for a power semiconductor device, a preparation method therefor, application thereof, a power device and a preparation method therefor are provided. The terminal structure includes a phosphorus-doped silicon oxide layer, a silicon nitride layer, a silicon-rich silicon nitride semi-insulating layer, an undoped silicon dioxide layer, and an organic medium layer. The silicon-rich silicon nitride semi-insulating layer is of an alternating superposition structure of a silicon-rich silicon nitride layer and an ultra-thin silicon nitride barrier layer. The terminal structure effectively prevents external moisture from invading the power device, which improves the robustness of the power device under a moisture condition. The multi-layer silicon-rich silicon nitride is used as a semi-insulating layer, which makes an electric field on a surface of the power device evenly distributed in gradient, prevents the electric field from being gathered at a device terminal.
    Type: Application
    Filed: July 2, 2024
    Publication date: February 27, 2025
    Inventors: Yimin WAN, Xiaojun WANG, Qinghai MA, Xiuzhong WANG, Rong CHEN, Haiming BAO
  • Publication number: 20250067647
    Abstract: Provided are an imaging method and system for residual stress of a basin insulator and a method for preparing a test block. The imaging method includes cutting and preparing a standard industrial sample of a basin insulator and testing the acoustoelastic coefficient of the standard industrial sample; then obtaining the residual stress data of the basin insulator and obtaining the spatial point sound velocity distribution of the basin insulator; finally, obtaining a stress distribution cloud map of the basin insulator by calculation of the attribute value and the coordinate data of a to-be-measured location, and performing reliability verification based on the residual stress data.
    Type: Application
    Filed: October 8, 2023
    Publication date: February 27, 2025
    Inventors: Jin HE, Chun HE, Songyuan LI, Qinghua TANG, Chi ZHANG, Rong CHEN, Qi ZHAO, Jin LI, Xiaobo SONG, Yue HAN, Meng CAO, Lin LI, Suya LI, Yanwei DONG, Zhengzheng MENG
  • Publication number: 20250057832
    Abstract: The present invention relates to the use of a class of 1,4-dihydro-naphthyridine derivatives in the treatment of tumors.
    Type: Application
    Filed: November 21, 2022
    Publication date: February 20, 2025
    Applicant: NEURODAWN PHARMACEUTICAL CO., LTD.
    Inventors: Zhengping ZHANG, Fulong LI, Lei WANG, Rong CHEN, Weidong YANG, Fang FANG, Wenji AN, Yao HUA, Lin FENG
  • Publication number: 20250018008
    Abstract: Disclosed is the use of a mesencephalic astrocyte-derived neurotrophic factor (Manf) in the preparation of a drug for treating herpes simplex keratitis (HSK). Manf has an anti-herpes simplex virus type I (HSV-1) effect and can inhibit corneal vascular proliferation, corneal inflammatory response, and corneal nerve regression caused by HSV-1 infection. Manf can be used to prepare drugs for treating the HSK.
    Type: Application
    Filed: November 29, 2023
    Publication date: January 16, 2025
    Applicant: Eye Institute of Shandong First Medical University
    Inventors: Lingling Yang, Zongzheng Zou, Xiaochuan Wang, Rong Chen, Jing Feng, Huifeng Wang
  • Publication number: 20250015173
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
    Type: Application
    Filed: September 17, 2024
    Publication date: January 9, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Shin-Chuan Huang, Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20250011558
    Abstract: A method for reducing surface tension of polymer material by decompression effect includes step as follows. A decompression step is performed, wherein a polymer material is placed at a low pressure environment to reduce a surface tension of the polymer material, and a pressure of the low pressure environment is lower than 105 Pa.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 9, 2025
    Inventors: Rong-Ming HO, Aum Sagar PANDA, Yi-Chien LEE, Chen-Jung HUNG, Kang-Ping LIU, Cheng-Yen CHANG, Gkreti-Maria MANESI, Apostolos AVGEROPOULOS, Fan-Gang TSENG, Fu-Rong CHEN
  • Publication number: 20240418689
    Abstract: A detection method of polyamines is used to solve the problem that the conventional method is not suitable for detecting polyamines. The detection method of polyamines includes providing a sample with polyamines. The sample and a derivatization reagent with an isothiocyanate group are dissolved in a working solution to form a mixture, while a thiocarbamoylation reaction between the polyamine in the sample and the derivatization reagent is performed to obtain a derivatization solution with a thiourea derivative. The thiourea derivative in the derivatization solution is then detected to obtain a value of polyamine. With such performance, polyamine in the sample can be effectively detected. A diagnostic method of cancers is also disclosed.
    Type: Application
    Filed: June 6, 2024
    Publication date: December 19, 2024
    Inventors: Chia-Hsien Feng, Wen-Rong Chen, Chi-Yu Lu
  • Publication number: 20240412728
    Abstract: A device is configured to detect multiple different wakewords. A device may operate a joint encoder that operates on audio data to determine encoded audio data. The device may operate multiple different decoders which process the encoded audio data to determine if a wakeword is detected. Each decoder may correspond to a different wakeword. The decoders may use fewer computing resources than the joint encoder, allowing for the device to more easily perform multiple wakeword processing. Enabling/disabling wakeword(s) may involve the reconfiguring of a wakeword detector to add/remove data for respective decoder(s). Specific decoders may be activated/deactivated depending on device context, thereby efficiently managing device resources.
    Type: Application
    Filed: June 12, 2023
    Publication date: December 12, 2024
    Inventors: Michael Thomas Peterson, Gengshen Fu, Aaron Challenner, Rong Chen, Cody Jacques, Stefan M Bradstreet
  • Publication number: 20240403002
    Abstract: In one general embodiment, a computer-implemented method includes analyzing document object model code for generating locators of elements of a web page. The locators are output visibly on a user interface displaying the web page. A page object code template of the web page is generated. Mappings of the elements and/or the locators to page object variables are received from a user. Representations of the mappings are output visibly on the user interface displaying the web page. Mappings from page areas of the web page to page object functions are received from the user. Representations of the mappings from the page areas of the web page to the page object functions are output visibly on the user interface displaying the web page. Code references are rendered on the user interface displaying the web page.
    Type: Application
    Filed: June 5, 2023
    Publication date: December 5, 2024
    Inventors: Jin Shi, Chao Yuan Huang, Chun-Sheng Chung, Fan Yang, Rong Chen
  • Patent number: 12157385
    Abstract: A charging state analysis method of an electric vehicle based on electrical characteristic sequence analysis is provided. The method includes following steps: step S1, obtaining voltage sampling data and current sampling data of the electric vehicle during charging; step S2, setting a time interval, so as to divide the voltage sample data and the current sampling data obtained in step S1 into multiple data sets; step S3, calculating an electrical characteristic vector of each time interval; step S4. adding the calculation results of Step S3 to a temperature sensing value T, and generate an electrical characteristic sequence of whole charging cycle; step S5, inputting the electrical characteristic sequence of the electric vehicle into a trained TRNN in sequence to obtain corresponding results; if the result is 1, it is normal; if the result is 0, it is abnormal.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: December 3, 2024
    Assignee: Guizhou Power Grid Company Limited
    Inventors: Bin Liu, Zhukui Tan, Qiuyan Zhang, Saiqiu Tang, Xia Yan, Rong Chen, Yu Shen, Hai Zhou, Peng Zeng, Canhua Wang, Chenghui Lin, Mian Wang, Jipu Gao, Meimei Xu, Zhaoting Ren, Cheng Yang, Dunhui Chen, Houyi Zhang, Xinzhuo Li, Qihui Feng, Yutao Xu, Li Zhang, Bowen Li, Jianyang Zhu, Junjie Zhang
  • Publication number: 20240362750
    Abstract: An underwater image enhancement method and image processing system using the same are provided. The method includes the following steps. An original underwater image is received. An original histogram of the original underwater image is generated. The original histogram is input into a deep learning model to generate an optimized histogram. An optimized underwater image is generated according to the optimized histogram and the original underwater image.
    Type: Application
    Filed: September 7, 2023
    Publication date: October 31, 2024
    Applicant: National Chengchi University
    Inventors: Yan-Tsung Peng, Yen-Rong Chen
  • Patent number: 12125903
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
    Type: Grant
    Filed: September 21, 2023
    Date of Patent: October 22, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shin-Chuan Huang, Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240347458
    Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a first electrical conductor, a second electrical conductor, a third electrical conductor, a plurality of metal features and a plurality of active regions. The first electrical conductor extends along a first direction and is electrically coupled to a first voltage. The second electrical conductor extends along the first direction and is electrically coupled to a second voltage. The second voltage is lower than the first voltage. The third electrical conductor extending along the first direction is electrically coupled to a third voltage and disposed between the first electrical conductor and the second electrical conductor. The metal features extend along a second direction perpendicular to the first direction and are formed above the first electrical conductor, the second electrical conductor and the third electrical conductor.
    Type: Application
    Filed: April 11, 2023
    Publication date: October 17, 2024
    Inventors: SHENG-FENG HUANG, JIANN-TYNG TZENG, SHIH-WEI PENG, YU-RONG CHEN
  • Patent number: D1048768
    Type: Grant
    Filed: January 10, 2024
    Date of Patent: October 29, 2024
    Inventor: Rong Chen
  • Patent number: D1051519
    Type: Grant
    Filed: January 10, 2024
    Date of Patent: November 12, 2024
    Inventor: Rong Chen
  • Patent number: D1073367
    Type: Grant
    Filed: January 10, 2024
    Date of Patent: May 6, 2025
    Inventor: Rong Chen