Abstract: The present invention belongs to the pharmaceutical field, and relates to an application of a cilostazol and d-borneol composition in preparing a drug for treating cerebrovascular disease, in particular ischemic cerebrovascular disease. The present invention specifically relates to a composition containing cilostazol or a pharmaceutically acceptable salt thereof and d-borneol, and an application of the composition in preparing a drug for treating cerebrovascular disease, in particular ischemic cerebrovascular disease.

Abstract: The present application provides a fractional domain noise reduction method for a power signal, including: S1: estimating an optimal fractional Fourier transform angle {circumflex over (?)}0 of an original signal x(t); S2: calculating fractional Fourier transform of the original signal under the optimal fractional Fourier transform angle to obtain X{circumflex over (?)}0 (u); S3: performing band-pass filtering in an optimal fractional Fourier transform domain to obtain X{circumflex over (?)}0 (u)H(u); S4: calculating fractional Fourier transform of X{circumflex over (?)}0 (u)H(u) at an angle of ?X{circumflex over (?)}0 and S5: judging whether {circumflex over (?)}0 is equal to ?/2, if yes, ending the noise reduction, and if no, eliminating a recovered signal component x(t)=x(t)?X{circumflex over (?)}0(u)H(u), and then repeating the steps S1 to S5 again until the estimated optimal FRFT rotation angle is equal to ?/2.

Abstract: An optical fiber network device includes a fiber and a photonic integrated circuit. Fiber receives a first optical signal and transmits a second optical signal. A first wavelength of first optical signal is different from a second wavelength of second optical signal. Photonic integrated circuit includes a laser chip, a photodetector, a wavelength division multiplexing coupler, a first optical modulation element and a second optical modulation element. Laser chip is disposed on photonic integrated circuit, and is configured to generate first optical signal. Photodetector detects second optical signal. Wavelength division multiplexing coupler is configured to couple first optical signal to fiber, and receives second optical signal. First optical modulation element is coupled to wavelength division multiplexing coupler and laser chip, and is configured to modulate first optical signal.

Abstract: An optical fiber transmission device includes a substrate, a photonic integrated circuit, and an optical fiber assembly. The photonic integrated circuit is disposed on an area of the substrate. The substrate has a protruding structure at an interface with an edge of the photonic integrated circuit. The optical fiber assembly includes an optical fiber and a ferrule that sleeves the optical fiber. The protruding structure of the substrate is configured to abut against the ferrule to limit the position of the optical fiber assembly in a vertical direction of the substrate, such that the protruding structure is a stopper for the optical fiber assembly in the vertical direction.

Abstract: A system may include a first acoustic event detection (AED) component configured to detect a predetermined set of acoustic events, and include a second AED component configured to detect custom acoustic events that a user configures a device to detect. The first and second AED components are configured to perform task-specific processing, and may receive as input the same acoustic feature data corresponding to audio data that potentially represents occurrence of one or more events. Based on processing by the first and second AED components, a device may output data indicating that one or more acoustic events occurred, where the acoustic events may be a predetermined acoustic event and/or a custom acoustic event.

Abstract: An object detection method, for detecting a target object, comprising: capturing at least two detection portions with a first aspect ratio from an input image with a second aspect ratio; confirming whether any object is detected in each of the detection portions and obtaining corresponding boundary boxes for detected objects; and wherein the first aspect ratio is different to the second aspect ratio.

Abstract: A method for bicycle fitting includes receiving evaluation factors based on one or more scenario parameters; positioning at least one of a saddle and a handlebar to one or more positions when a user is pedaling; determining values for the evaluation factors according to data received from one or more sensors at the one or more positions; and processing the values to identify one or more recommended positions for the saddle or the handlebar.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: Various embodiments relate to determining a lithium-plating state of a battery. Various embodiments include a method including: observing a first characteristic of a battery, observing a second characteristic of the battery, and determining, based on the first characteristic and the second characteristic, a lithium-plating state of the battery. In some embodiments, the first characteristic and the second characteristic may each be one of: a rate of change of the capacity per cycle over a number of cycles, end-of-charge rest voltage over a number of cycles, and a coulombic efficiency over a number of cycles. Related devices are also disclosed.

Abstract: A backup power system and method of use is provided for powering at least one load wherein the at least one load is normally connected to grid power at a grid frequency. The system and method include providing a generator powered by a fuel in gas phase, such as natural gas; detecting loss of grid power to the at least one load; driving the generator to an operating frequency equal to a predetermined driven frequency that is greater than the grid frequency; and selectively coupling the at least one load to the generator via a load controller while the generator is at the predetermined driven frequency.

Abstract: A method of managing a computer network in a production environment is described. The method comprises: identifying the endpoints to be used on the computer network during a time period; and at least a predetermined time prior to the commencement of the time period, the method comprises: running a flow routing algorithm for the computer network having the identified endpoints.

Abstract: A display panel and a display apparatus are provided. The display panel includes a display area. The display area includes color pixels and pixel groups. The color pixels include a first pixel, a second pixel and a third pixel that have different colors from one another, each of the pixel groups includes one first pixel, one second pixel, one third pixel and at least one color-changing pixel. An operating state of the at least one color-changing pixel includes a transparent state and a black state. The display panel provided by the present disclosure can achieve a transparent display effect, and can also display black pixel information in an image by using a black state of the color-changing pixel, which solves the technical problem in the related art in which transparent display is difficult to display black pixel information in the image.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: Disclosed are a shield tunnel segment structure and a construction method thereof. The shield tunnel segment structure includes segment blocks sequentially spliced in a circumferential direction. Each segment block forms a closed annular segment structure, and outer diameters of adjacent annular segment structures gradually increase in an axial direction. At least two adjacent segment blocks of the same annular segment structure form an annular inner groove, and at least one segment block of the adjacent annular segment structures is provided with an inner bump which matches the annular inner groove. At least two adjacent segment blocks of the same annular segment structure form an annular outer groove, and at least one segment block of the adjacent annular segment structures is provided with an outer bump which matches the annular outer groove. The annular outer grooves and the annular inner grooves are staggered in the circumferential direction.

Abstract: An anti-loosening fastener includes a bolt including a head and a screw tail, a first washer configured to fit around the screw tail of the bolt, a first nut configured to screw onto the screw tail of the bolt, a second nut configured to screw onto the screw tail of the bolt, a first cutting surface located on the screw tail of the bolt. A first surface of the first washer includes one or more wedge-shaped helical teeth, and a first surface of the first nut includes one or more wedge-shaped helical teeth. The bolt, the first washer, the first nut, the second nut, and the cutting surface are capable of affixing a component. The anti-loosening fastener may also include a second cutting surface located on the screw tail of the bolt.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: A self-seeded optical parametric amplifier (OPA) system includes a cavity mirror, a wavelength conversion unit, and a dichroic filter. The cavity mirror is configured to allow high transmission for an input laser beam and high reflection for a feedback beam. The wavelength conversion unit is configured to convert the input laser beam into a signal laser beam and an idler laser beam. The dichroic filter is configured to allow one of the signal laser beam and the idler laser beam to pass through the dichroic filter and reflect the other one onto a feedback path.