Abstract: A method of managing a computer network in a production environment is described. The method comprises: identifying the endpoints to be used on the computer network during a time period; and at least a predetermined time prior to the commencement of the time period, the method comprises: running a flow routing algorithm for the computer network having the identified endpoints.

Abstract: A method of managing a computer network is described. The method comprising: identifying a characteristic of data traffic being sent over the computer network; and applying a policy to at least part of the network, the policy defining the operation of at least part of the network in event of a failure within the network and being defined on the basis of the characteristic of the data traffic.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A GIS mechanical fault diagnosis method and the device are disclosed. The method includes: collecting vibration signals to be measured of various excitation sources of GIS in mechanical operation; performing wavelet packet-feature entropy vector extraction on the vibration signals to be measured, when it is determined that the vibration signals to be measured are abnormal according to standard vibration signals in the normal state; inputting the extracted wavelet packet-feature entropy vectors into the pre-trained BP neural network for GIS mechanical fault identification, and outputting the corresponding fault. The disclosure integrates the vibration signals under the action of various excitation sources, extracts the feature entropy vectors according to the entropy theory, and constructs and trains a BP neural network that can classify and recognize various GIS mechanical faults, so as to perform comprehensive and effective GIS mechanical faults diagnose.

Abstract: A method for synchronous control of a gantry mechanism with online inertia matching is applicable to a machine tool equipped with a gantry mechanism. The gantry mechanism includes two rails, a crossbeam and a saddle, in which the saddle is disposed on the crossbeam, and the crossbeam is disposed by crossing the two rails. Each of the two rails is furnished with a driving apparatus for synchronously driving the crossbeam, and the driving apparatus includes a drive motor and a lead screw. This method includes the steps of: obtaining gantry-mechanism information; detecting position information of the saddle on the crossbeam; evaluating the position information and the gantry-mechanism information to derive load-inertia variety information; and, evaluating the load-inertia variety information to adjust torque-output information of the drive motor corresponding to the respective driving apparatus.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.

Abstract: An electrolyzed copper foil and a current collector of an energy storage device are provided. The electrolyzed copper foil includes a transition layer and a nano-twin copper layer formed on the transition layer. The transition layer has an equiaxial grain of a (111) plane having a volume ratio of 20-40%, a (200) plane having a volume ratio of 20-40%, and a (220) plane having a volume ratio of 20-40%. A thickness of the transition layer is 0.2 ?m to 1.5 ?m. The nano-twin copper layer has a columnar grain of the (111) plane having a volume ratio of more than 85%, and a thickness of the nano-twin copper layer is 3 ?m to 30 ?m.

Abstract: A touch module includes a touch panel unit, a conductive adhesive layer and a circuit board. The touch panel unit includes a substrate, a touch sensing structure disposed on the substrate, a signal transmitting structure disposed on the substrate and electrically connected to the touch sensing structure, and a protection layer covering a part of a surface of the signal transmitting structure. The protection layer and the substrate are disposed at two opposite sides of the signal transmitting structure. The conductive adhesive layer has a main portion which covers a region of the signal transmitting structure on which the protection layer is not disposed, and a cover portion which extends from the main portion and covers the protection layer. The circuit board is disposed on the conductive adhesive layer, and the circuit board and the signal transmitting structure are disposed at two opposite sides of the conductive adhesive layer.

Abstract: A control unit for controlling a deflector in an imaging apparatus. The imaging apparatus includes an electron gun arranged to provide electron beam to scan a specimen, and the deflector. The deflector is arranged to move the electron beam in a first scanning direction and a second scanning direction that are in the same plane for scanning the specimen. The control unit is configured to determine the first scanning direction and the second scanning direction, and process the determined first scanning direction and the determined second scanning direction based on predetermined equations. The control unit is further configured to provide, based on the processing, a control signal to the deflector to adjust one or both of the first scanning direction and the second scanning direction such that they become substantially orthogonal.

Abstract: A device for providing electrons and its method of making. The device includes an optical fiber with a tip and a metallic arrangement arranged at the tip. The metallic arrangement is arranged to be excited by an energy source to emit electrons or electron beams.

Abstract: Provided are a plant EPSPS mutant containing mutations L195P and S247G and an encoding gene and the use thereof, related to the field of genetic engineering technology. Comparing the plant EPSPS mutant with E. coli EPSPS, the amino acid sequence of the plant EPSPS mutant has the mutation L195P at position 195 corresponding to E. coli EPSPS and/or the mutation S247G at position 247 corresponding to E. coli EPSPS. The mutation of either of the two sites or the simultaneous mutation of the two sites can confer or improve the resistance of the plant EPSPS mutant to glyphosate. Plants or recombinant bacteria for transforming the plant EPSPS mutant can grow normally in the presence of glyphosate.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: The present invention discloses a detection and analysis method for urine-modified nucleoside based on a surface-enhanced resonance Raman spectroscopy technology. In the method, a tumor marker modified nucleoside in the urine of a normal person and a cancer patient is extracted through the specificity of borophenylic acid gel; Au colloid is taken as an enhancing substrate to detect SERRS signals; and statistical analysis is conducted by using PLS-DA algorithms to establish a diagnosis and identification model for the SERRS of the urine-modified nucleoside. The model is used to discriminate that the to-be-detected urine-modified nucleoside belongs to the normal person or the cancer patient. After PLS-DA, the surface-enhanced resonance Raman spectroscopy data of the urine-modified nucleoside of the present invention has specificity of 96.9%, sensitivity of 98.2% and accuracy of 97.6%.

Abstract: An edge-lit plate-form lamp includes a plate-form bottom casing, a plate-form top casing, an illuminating component and a plug. The plate-form bottom casing has a cavity disposed within. The plate-form top casing detachably engages with the bottom casing. The plate-form top casing includes a window. The illuminating component is disposed within the cavity. The window allows light emission from the illuminating component within an emission area defined by the window. The plug extends across the plate-form bottom casing. Also, the plug is electrically coupled to the illuminating component. In addition, the plug relays power to the illuminating component while being electrically coupled to an external power source.

Abstract: A paddy rice EPSPS mutant, and an encoding gene and use thereof, relating to the technical field of genetic engineering. The paddy rice EPSPS mutant has an amino acid sequence shown as SEQ ID NO. 1. The paddy rice EPSPS mutant has glyphosate resistance and can resist glyphosate having a concentration of 100 mM. The paddy rice EPSPS mutant has very wide use prospect in the field of cultivating glyphosate-resistant plants.

Abstract: A nanoparticle continuous-coating device based on spatial atomic layer deposition. A first-stage pipeline unit, a second-stage pipeline unit, a third-stage pipeline unit and a fourth-stage pipeline unit which are connected sequentially. The first-stage pipeline unit is used for providing a first precursor and enabling the first precursor to be adsorbed on surfaces of nanoparticles. The third-stage pipeline unit is used for providing a second precursor and enabling the second precursor to react with the first precursor on the surfaces of the nanoparticles, so that a monomolecular thin film layer is generated on the surfaces of the nanoparticles. The second-stage and fourth-stage pipeline units are used for cleaning the nanoparticles and discharging the redundant first precursor, the redundant second precursor or reaction by-products.

Abstract: An electron gun and an apparatus incorporating the electron gun. The electron gun includes an electron emission element, an electrode, a control element, and a control circuit. The electron emission element is arranged to be activated to emit electron beam. The electrode is arranged to be electrically connected with a power supply to accelerate the emitted electron beam. The control element may be arranged between the electron emission element and the electrode. The control element is arranged to be electrically connected with the power supply to provide an electric field to control emission of electron beams from the electron emission element. The control circuit is electrically connected with the control element for changing the electric field provided by the control element.