Abstract: A control unit for controlling a deflector in an imaging apparatus. The imaging apparatus includes an electron gun arranged to provide electron beam to scan a specimen, and the deflector. The deflector is arranged to move the electron beam in a first scanning direction and a second scanning direction that are in the same plane for scanning the specimen. The control unit is configured to determine the first scanning direction and the second scanning direction, and process the determined first scanning direction and the determined second scanning direction based on predetermined equations. The control unit is further configured to provide, based on the processing, a control signal to the deflector to adjust one or both of the first scanning direction and the second scanning direction such that they become substantially orthogonal.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.

Abstract: In some examples, a polar decoder for implementing polar decoding of a codeword can be configured to implement alogarithmic likelihood ratio (LLR), an even bit, and an odd bit buffer, respectively. The polar decoder can be configured to employ a list-to-buffer mapping state register for the LLR buffer for loading LLR values for each path at a given stage of a decoding graph. The polar decoder can be configured to update and store LLR values for each path at the given stage. The polar decoder can be configured to employ a list-to-buffer mapping state register for the even bit buffer for loading even bit values from the even bit buffer and loading odd bit values from the odd bit buffer, and updating even or odd bit values for each path at the given stage of the decoding graph.

Abstract: A control method for a viscous semi-liquid frozen or hot food dispenser comprising a stirring means configured to stir the food, a motor (50) configured to drive the stirring means to rotate, a refrigerating means or heating means configured to input cold energy or heat energy into the food, a rotation speed sensor (80) configured to detect a stirring speed, and a temperature sensor (13) configured to detect the food temperature, the control method comprising the steps of: a) refrigerating or heating the food by the refrigerating means or heating means; b) comparing the food temperature detected by the temperature sensor (13) with a target preset value of the food temperature, and determining to continue the refrigeration or heating, or to stop the refrigeration or heating and to keep stopping for a preset time; c) intervening by corresponding adjustment of the target preset value when a data set collected from the rotation speed sensor (80) shows that change trend of the rotation speed meets predefined inter

Abstract: An electrical connector is used to electrically connect a first component and a second component, including: an insulating body, having an insertion slot for the first component to insert backward therein; multiple terminals, having at least one pair of first signal terminals. Each terminal has a contact portion and a tail portion provided in the front-rear direction. The contact portion is provided relatively in front of the bottom surface and protrudes into the insertion slot to be electrically connected to the first component. The tail portion is electrically connected to the second component. Each terminal further has a connecting portion located between the contact portion and the tail portion. An insulating block is used to fix the terminal. The connecting portion of each terminal extends forward from the front surface of the insulating block and passes beyond the bottom surface.

Abstract: An anti-bedsore bed may comprise a bed unit, a first bed body, and a second bed body. The bed unit has a first mattress, and a bottom portion is coupled on a bottom surface thereof. Moreover, the bottom portion comprises a plurality of first supporting units at positions corresponding to a user's upper back, middle portion of back and lower back, and each of the first supporting units has a first sliding block moveably mounted on the bottom portion. Each of the first sliding blocks has a first supporting rod, and an abutting unit is pivotally connected to an upper end of the first supporting rod. Each of first power units secured on a bottom surface of the first sliding block is engaged with the first supporting rod while each of second power units secured on the bottom portion is engaged with the first sliding block.

Abstract: A method of managing a computer network is described. The method comprising: identifying a characteristic of data traffic being sent over the computer network; and applying a policy to at least part of the network, the policy defining the operation of at least part of the network in event of a failure within the network and being defined on the basis of the characteristic of the data traffic.

Abstract: A method of managing a computer network in a production environment is described. The method comprises: identifying the endpoints to be used on the computer network during a time period; and at least a predetermined time prior to the commencement of the time period, the method comprises: running a flow routing algorithm for the computer network having the identified endpoints.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

Abstract: A GIS mechanical fault diagnosis method and the device are disclosed. The method includes: collecting vibration signals to be measured of various excitation sources of GIS in mechanical operation; performing wavelet packet-feature entropy vector extraction on the vibration signals to be measured, when it is determined that the vibration signals to be measured are abnormal according to standard vibration signals in the normal state; inputting the extracted wavelet packet-feature entropy vectors into the pre-trained BP neural network for GIS mechanical fault identification, and outputting the corresponding fault. The disclosure integrates the vibration signals under the action of various excitation sources, extracts the feature entropy vectors according to the entropy theory, and constructs and trains a BP neural network that can classify and recognize various GIS mechanical faults, so as to perform comprehensive and effective GIS mechanical faults diagnose.

Abstract: A method for synchronous control of a gantry mechanism with online inertia matching is applicable to a machine tool equipped with a gantry mechanism. The gantry mechanism includes two rails, a crossbeam and a saddle, in which the saddle is disposed on the crossbeam, and the crossbeam is disposed by crossing the two rails. Each of the two rails is furnished with a driving apparatus for synchronously driving the crossbeam, and the driving apparatus includes a drive motor and a lead screw. This method includes the steps of: obtaining gantry-mechanism information; detecting position information of the saddle on the crossbeam; evaluating the position information and the gantry-mechanism information to derive load-inertia variety information; and, evaluating the load-inertia variety information to adjust torque-output information of the drive motor corresponding to the respective driving apparatus.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.

Abstract: An electrolyzed copper foil and a current collector of an energy storage device are provided. The electrolyzed copper foil includes a transition layer and a nano-twin copper layer formed on the transition layer. The transition layer has an equiaxial grain of a (111) plane having a volume ratio of 20-40%, a (200) plane having a volume ratio of 20-40%, and a (220) plane having a volume ratio of 20-40%. A thickness of the transition layer is 0.2 ?m to 1.5 ?m. The nano-twin copper layer has a columnar grain of the (111) plane having a volume ratio of more than 85%, and a thickness of the nano-twin copper layer is 3 ?m to 30 ?m.

Abstract: A touch module includes a touch panel unit, a conductive adhesive layer and a circuit board. The touch panel unit includes a substrate, a touch sensing structure disposed on the substrate, a signal transmitting structure disposed on the substrate and electrically connected to the touch sensing structure, and a protection layer covering a part of a surface of the signal transmitting structure. The protection layer and the substrate are disposed at two opposite sides of the signal transmitting structure. The conductive adhesive layer has a main portion which covers a region of the signal transmitting structure on which the protection layer is not disposed, and a cover portion which extends from the main portion and covers the protection layer. The circuit board is disposed on the conductive adhesive layer, and the circuit board and the signal transmitting structure are disposed at two opposite sides of the conductive adhesive layer.

Abstract: A control unit for controlling a deflector in an imaging apparatus. The imaging apparatus includes an electron gun arranged to provide electron beam to scan a specimen, and the deflector. The deflector is arranged to move the electron beam in a first scanning direction and a second scanning direction that are in the same plane for scanning the specimen. The control unit is configured to determine the first scanning direction and the second scanning direction, and process the determined first scanning direction and the determined second scanning direction based on predetermined equations. The control unit is further configured to provide, based on the processing, a control signal to the deflector to adjust one or both of the first scanning direction and the second scanning direction such that they become substantially orthogonal.