Abstract: The present disclosure discloses a device with a protective layer, including a substrate, a seed layer formed on the substrate, and a diamond-like carbon layer formed on the seed layer, where the seed layer is a silicon nitride layer, and a content of nitrogen in the silicon nitride layer is 9%-17%. The present disclosure further discloses a microwave-assisted magnetic recording (MAMR) head slider, a head gimbal assembly, and a disk drive unit. The device has good thermal stability, oxidation resistance and corrosion resistance, thereby improving reliability and prolonging service life of an MAMR head.

Abstract: The present utility model belongs to the technical field of charging cases, and discloses a light guide structure of an earphone charging case, including a charging case and earphones. A shell of the charging case is provided with a shell light guide element, and the element penetrates the shell. The earphone is provided with a light source. When the earphone is placed in the charging case, light generated by the earphone light source can be transmitted to the shell light guide element, making the guide element emits light. The light guide structure of the earphone charging case use the light source of the earphone directly through optical simulation so as to realize secondary light guide, so that the shell of the charging case emits light, no additional light source is required, costs are reduced, the size of charging case can be effectively reduced, and miniaturization and lightweight can be realized.

Abstract: In some embodiments, a method is provided. The method includes identifying an incident situation based upon a sensor detecting an abnormal condition. One or more life safety systems are queried to obtain life safety system data. One or more databases, comprising equipment information, chemical information, personnel information, and/or emergency response contingency procedures, are queried to obtain on-site information. The life safety system data and the on-site information are integrated together to generate incident situation information. The incident situation information is displayed through an electronic display.

Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.

Abstract: The present utility model belongs to the technical field of charging cases, and discloses a light guide structure of an earphone charging case, including a charging case and earphones. A shell of the charging case is provided with a shell light guide element, and the element penetrates the shell. The earphone is provided with a light source. When the earphone is placed in the charging case, light generated by the earphone light source can be transmitted to the shell light guide element, making the guide element emits light. The light guide structure of the earphone charging case use the light source of the earphone directly through optical simulation so as to realize secondary light guide, so that the shell of the charging case emits light, no additional light source is required, costs are reduced, the size of charging case can be effectively reduced, and miniaturization and lightweight can be realized.

Abstract: In some embodiments, a method is provided. The method includes identifying an incident situation based upon a sensor detecting an abnormal condition. One or more life safety systems are queried to obtain life safety system data. One or more databases, comprising equipment information, chemical information, personnel information, and/or emergency response contingency procedures, are queried to obtain on-site information. The life safety system data and the on-site information are integrated together to generate incident situation information. The incident situation information is displayed through an electronic display.

Abstract: Aspects of this disclosure are directed to a method and a terminal device, and a computer-readable storage medium. The terminal device includes processing circuitry that obtains n voice messages from at least one user account. n is a positive integer. The processing circuitry displays a voice message presentation interface. The voice message presentation interface is configured to display virtual characters corresponding to the n voice messages in a virtual world. Locations of the n voice messages in the virtual world are based on whether the n voice messages are unplayed. The virtual characters can be based on respective message attributes of the n voice messages.

Abstract: An electronic device includes a processor circuit, a frequency-domain-to-time-domain conversion circuit, a transmitter circuit, a hybrid circuit, a receiver circuit, and a time-domain-to-frequency-domain conversion circuit. The processor circuit generates a frequency-domain transmitting signal. The frequency-domain-to-time-domain conversion circuit converts the frequency-domain transmitting signal into a first time-domain transmitting signal. The transmitter circuit generates a second time-domain transmitting signal. The hybrid circuit includes an echo noise cancelling path and an echo noise path. When the echo noise cancelling path is turned off, the processor circuit receives a first frequency-domain receiving signal. When the echo noise cancelling path is turned on, the processor circuit receives a second frequency-domain receiving signal.

Abstract: Aspects of this disclosure are directed to a voice message display method and apparatus in an application, a computer device, and a computer-readable storage medium. The method can be performed by a terminal on which an application is installed and is capable of receiving a voice message. The method can include starting an application, and obtaining n voice messages published by at least one user account. The method can further include displaying a voice message presentation interface of the application, where the voice message presentation interface displays the voice message in a virtual world and the voice message are displayed by using a visible element in the virtual world as a carrier.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a first transistor over a substrate, wherein the first transistor comprises a first source/drain feature; depositing an interlayer dielectric layer around the first transistor; etching an opening in the interlayer dielectric layer to expose the first source/drain feature; conformably depositing a semimetal layer over the interlayer dielectric layer, wherein the semimetal layer has a first portion in the opening in the interlayer dielectric layer and a second portion over a top surface of the interlayer dielectric layer; and forming a source/drain contact in the opening in the interlayer dielectric layer.

Abstract: A method and a device for measuring a tangential reaction force of a resistance device on a flywheel, and the reaction force multiply the radius of the flywheel to obtain a torque, such that the torque multiply a gear ratio is the torque to overcome the resistance of flywheel on the drivetrain. The torque to overcome the resistance of flywheel on the drivetrain adding a torque to overcome the inertia of the flywheel and mechanical friction under the state of no resistance is the total torque presented on the drivetrain. Such that using the total torque to calculate power and energy consumption.

Abstract: The present disclosure discloses a device with a protective layer, including a substrate, a seed layer formed on the substrate, and a diamond-like carbon layer formed on the seed layer, where the seed layer is a silicon nitride layer, and a content of nitrogen in the silicon nitride layer is 9%-17%. The present disclosure further discloses a microwave-assisted magnetic recording (MAMR) head slider, a head gimbal assembly, and a disk drive unit. The device has good thermal stability, oxidation resistance and corrosion resistance, thereby improving reliability and prolonging service life of an MAMR head.

Abstract: A sub-circuit of a voltage regulator includes a load condition detection circuit and a controllable circuit. The load condition detection circuit is arranged to detect a load transient frequency of a load powered by the voltage regulator, and generate a control signal according to a detection result of the load transient frequency. The controllable circuit is arranged to receive the control signal, wherein an operational behavior of the controllable circuit dynamically changes in response to the control signal.

Abstract: A near-eye display device includes a camera module, a display module and a rotating module. The camera module is configured for obtaining an image information along a direction of a first optical axis. The display module is configured for transmitting an image light of virtual information to a human eye along a second optical axis. The rotating module is configured for controlling the rotation of the camera module to change a position of the first optical axis, so as to switch the near-eye display device between a state of close-up view and a state of distant view. In the state of distant view, an angle between the first optical axis and the second optical axis is 25°. In the state of close-up view, the angle between the first optical axis and the second optical axis is less than or equal to 13°.

Abstract: A high-bandwidth bend-insensitive multimode fiber includes a core laver and a cladding including an inner cladding, a depressed cladding, and an outer cladding arranged sequentially from inside to outside. The core layer is a silicon dioxide glass layer co-doped with germanium, phosphorus (P), and fluorine (F) and has a refractive index profile in a shape of a parabola, a distribution index in a range of 2.0-2.3, a radius in a range of 23-27 ?m, and a maximum relative refractive index difference in a range of 0.9-1.2% at its center. A contribution amount of P at the center is in a range of 0.01-0.30%. A doping amount of F increases from the center to the edge of the core layer. A contribution amount of F at the center and edge of the core layer is in range of 0.0% to ?0.1%, and ?0.40% to ?0.20%, respectively.

Abstract: A magnetic component includes a magnetic core and a first winding module. The magnetic core has two opposite openings and at least one magnetic column. The first winding module has a plurality of annular metal plates disposed around the at least one magnetic column. Each of the annular metal plates has an electrical connection end, an annular portion and a heat-dissipating end. The electrical connection end and the heat-dissipation end are located at the two opposite openings of the magnetic core respectively. A thermal-dissipating area of the heat-dissipating end is greater than a cross-sectional area of a connection portion between the heat-dissipating end and the annular portion.

Abstract: A processing method for automatically generating machining features is provided. A workpiece CAD file is obtained to perform a CAD numerical analysis on a blank body. With the workpiece CAD file being used as a target, a workpiece CAD appearance is compared with the blank body to obtain a feature identification result of a first to-be-processed blank body, which includes identifying data of a to-be-removed blank body and a feature of a first processing surface. A geometric analysis is performed on the first processing surface feature and a tool selection range is determined. A virtual cutting simulation is performed on the first processing surface to generate a processed area data and an unprocessed area data. A spatial coordinate mapping comparison between the unprocessed area data and a surface data of the workpiece CAD file is performed to obtain a feature identification result of a second to-be-processed blank body.

Abstract: A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a gate structure disposed on the fin structure, a source/drain (S/D) region disposed adjacent to the gate structure, a contact structure disposed on the S/D region, and a dipole layer disposed at an interface between the ternary compound layer and the S/D region. The contact structure includes a ternary compound layer disposed on the S/D region, a work function metal (WFM) silicide layer disposed on the ternary compound layer, and a contact plug disposed on the WFM silicide layer.

Abstract: A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a gate structure disposed on the fin structure, a source/drain (S/D) region disposed adjacent to the gate structure, a contact structure disposed on the S/D region, and a dipole layer disposed at an interface between the ternary compound layer and the S/D region. The contact structure includes a ternary compound layer disposed on the S/D region, a work function metal (WFM) silicide layer disposed on the ternary compound layer, and a contact plug disposed on the WFM silicide layer.