Patents by Inventor Roy G. Gordon

Roy G. Gordon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210083311
    Abstract: The invention provides an electro-chemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically in quinone molecules having multiple oxidation states, e.g., three or more. During charging of the battery, the quinone molecules at one electrode are oxidized by emitting electrons and protons, and the quinone molecules at the other electrode are reduced by accepting electrons and protons. These reactions are reversed to deliver electrical energy. The invention also provides additional high and low potential quinones that are useful in rechargeable batteries.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 18, 2021
    Inventors: Brian HUSKINSON, Michael MARSHAK, Michael J. AZIZ, Roy G. GORDON, Alan ASPURU-GUZIK, Suleyman ER, Changwon SUH, Liuchuan TONG, Kaixiang LIN
  • Publication number: 20210009497
    Abstract: We disclose quinone compounds and related species (Formula I) that possess significant advantages when used as a redox active material in a battery, e.g., a redox flow battery. In particular, the compounds provide redox flow batteries (RFBs) with extremely high capacity retention. For example, RFBs of the invention can be cycled for 500 times with negligible loss of capacity, and such batteries could be employed for years of service. Thus, the invention provides a high efficiency, long cycle life redox flow battery with reasonable power cost, low energy cost, and all the energy scaling advantages of a flow battery.
    Type: Application
    Filed: February 11, 2019
    Publication date: January 14, 2021
    Inventors: Michael J. AZIZ, Roy G. GORDON, Kaixiang LIN, David Gator KWABI, Yunlong JI
  • Publication number: 20200373599
    Abstract: The invention features redox flow batteries and compound useful therein as negolytes or posolytes. The batteries and compounds are advantageous in terms of being useable in water solutions at neutral pH and have extremely high capacity retention. Suitable negolytes are diquaternized bipyridines, suitable posolytes are water-soluble ferrocene derivatives.
    Type: Application
    Filed: August 14, 2017
    Publication date: November 26, 2020
    Applicant: President and Fellows of Harvard College
    Inventors: Roy G. GORDON, Michael J. AZIZ, Eugene BEH
  • Patent number: 10847829
    Abstract: The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically in quinone molecules having multiple oxidation states, e.g., three or more. During charging of the battery, the quinone molecules at one electrode are oxidized by emitting electrons and protons, and the quinone molecules at the other electrode are reduced by accepting electrons and protons. These reactions are reversed to deliver electrical energy. The invention also provides additional high and low potential quinones that are useful in rechargeable batteries.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: November 24, 2020
    Assignee: President and Fellows of Harvard College
    Inventors: Brian Huskinson, Michael Marshak, Michael J. Aziz, Roy G. Gordon, Alan Aspuru-Guzik, Suleyman Er, Changwon Suh, Liuchuan Tong, Kaixiang Lin
  • Patent number: 10840532
    Abstract: The present invention relates to flow battery systems including a flow battery and an electrolyte rebalancing system. In accordance with certain embodiments, the electrolytes used in the systems of the present invention are aqueous, and in one embodiment, bromine species are used as redox-active species.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: November 17, 2020
    Assignee: President and Fellows of Harvard College
    Inventors: Qing Chen, Roy G. Gordon, Michael J. Aziz
  • Publication number: 20180219241
    Abstract: The present invention relates to flow battery systems including a flow battery and an electrolyte rebalancing system. In accordance with certain embodiments, the electrolytes used in the systems of the present invention are aqueous, and in one embodiment, bromine species are used as redox-active species.
    Type: Application
    Filed: January 29, 2018
    Publication date: August 2, 2018
    Inventors: Qing CHEN, Roy G. GORDON, Michael J. AZIZ
  • Patent number: 9966622
    Abstract: The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically at an electrochemical electrode by the protonation of small organic molecules called quinones to hydroquinones. The proton is provided by a complementary electrochemical reaction at the other electrode. These reactions are reversed to deliver electrical energy. A flow battery based on this concept can operate as a closed system. The flow battery architecture has scaling advantages over solid electrode batteries for large scale energy storage.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: May 8, 2018
    Assignee: President and Fellows of Harvard College
    Inventors: Brian Huskinson, Michael Marshak, Michael J. Aziz, Roy G. Gordon, Theodore A. Betley, Alan Aspuru-Guzik, Suleyman Er, Changwon Suh
  • Publication number: 20180048011
    Abstract: Provided herein are redox flow (e.g., rechargeable) batteries having a first aqueous electrolyte including a first type of redox active material (e.g., a quinone or alloxazine) and a second aqueous electrolyte including a second type of redox active material. The invention also features a method for storing electrical energy involving charging a battery including first and second electrodes and a method for providing electrical energy involving discharging a battery including the same.
    Type: Application
    Filed: March 7, 2016
    Publication date: February 15, 2018
    Inventors: Michael J. AZIZ, Roy G. GORDON, Kaixiang LIN, Michael MARSHAK, Qing CHEN, Michael R. GERHARDT
  • Publication number: 20160248114
    Abstract: The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically in quinone molecules having multiple oxidation states, e.g., three or more. During charging of the battery, the quinone molecules at one electrode are oxidized by emitting electrons and protons, and the quinone molecules at the other electrode are reduced by accepting electrons and protons. These reactions are reversed to deliver electrical energy. The invention also provides additional high and low potential quinones that are useful in rechargeable batteries.
    Type: Application
    Filed: September 26, 2014
    Publication date: August 25, 2016
    Inventors: Brian HUSKINSON, Michael MARSHAK, Michael J. AZIZ, Roy G. GORDON, Alan ASPURU-GUZIK, Suleyman ER, Changwon SUH, Liuchuan TONG, Kaixiang LIN
  • Patent number: 9425406
    Abstract: There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: August 23, 2016
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Damon B. Farmer
  • Publication number: 20160043423
    Abstract: The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., gridscale, electrical energy storage. Electrical energy is stored chemically at an electrochemical electrode by the protonation of small organic molecules called quinones to hydroquinones. The proton is provided by a complementary electrochemical reaction at the other electrode. These reactions are reversed to deliver electrical energy. A flow battery based on this concept can operate as a closed system. The flow battery architecture has scaling advantages over solid electrode batteries for large scale energy storage.
    Type: Application
    Filed: August 11, 2015
    Publication date: February 11, 2016
    Inventors: Brian HUSKINSON, Michael MARSHAK, Michael J. AZIZ, Roy G. GORDON, Theodore A. BETLEY, Alan ASPURU-GUZIK, Suleyman ER, Changwon SUH
  • Publication number: 20150243991
    Abstract: The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., grid-scale, electrical energy storage. Electrical energy is stored chemically at an electrochemical electrode by the protonation of small organic molecules called quinones to hydroquinones. The proton is provided by a complementary electrochemical reaction at the other electrode. These reactions are reversed to deliver electrical energy. A flow battery based on this concept can operate as a closed system. The flow battery architecture has scaling advantages over solid electrode batteries for large scale energy storage.
    Type: Application
    Filed: September 26, 2013
    Publication date: August 27, 2015
    Applicant: President and Fellows of Harvard College
    Inventors: Brian Huskinson, Michael Marshak, Michael J. Aziz, Roy G. Gordon, Theodore A. Betley, Alan Aspuru-Guzik, Suleyman Er, Changwon Suh
  • Patent number: 8951444
    Abstract: In a method for functionalizing a carbon nanotube surface, the nanotube surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the nanotube surface, providing chemically functional groups at the nanotube surface, producing a functionalized nanotube surface. A functionalized nanotube surface can be exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the nanotube surface while providing chemically functional groups at the nanotube surface, producing a stabilized nanotube surface. The stabilized nanotube surface can be exposed to at least one material layer precursor species that deposits a material layer on the stabilized nanotube surface.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: February 10, 2015
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Damon B. Farmer
  • Patent number: 8796483
    Abstract: Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: August 5, 2014
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Adam S. Hock, Jaeyeong Heo, Prasert Sinsermsuksakul
  • Patent number: 8334016
    Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: December 18, 2012
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Jill S. Becker, Dennis Hausmann, Seigi Suh
  • Patent number: 8206568
    Abstract: The invention provides a method for molecular analysis. In the method, sidewalls are formed extending through a structure between two structure surfaces, to define an aperture. A layer of material is deposited on the aperture sidewalls and the two structure surfaces. The aperture with the deposited material layer is then configured in a liquid solution with a gradient in a chemical potential, between the two structure surfaces defining the aperture, that is sufficient to cause molecular translocation through the aperture.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: June 26, 2012
    Assignee: President and Fellows of Harvard College
    Inventors: Daniel Branton, Roy G. Gordon, Peng Chen, Toshiyuki Mitsui, Damon B. Farmer, Jene A. Golovchenko
  • Publication number: 20120108075
    Abstract: There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.
    Type: Application
    Filed: January 6, 2012
    Publication date: May 3, 2012
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Roy G. Gordon, Damon B. Farmer
  • Patent number: 8119032
    Abstract: The invention provides methods functionalizing a planar surface of a graphene layer, a graphite surface, or microelectronic structure. The graphene layer, graphite surface, or planar microelectronic structure surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the graphene layer, a graphite surface, or planar microelectronic surface while providing a functionalization layer of chemically functional groups, to produce a functionalized graphene layer, graphite surface, or planar microelectronic surface.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: February 21, 2012
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Damon B. Farmer, Charles M. Marcus, James R. Williams
  • Publication number: 20120028478
    Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
    Type: Application
    Filed: March 19, 2009
    Publication date: February 2, 2012
    Applicant: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Jill Becker, Dennis Hausmann, Seigi Suh
  • Publication number: 20120027937
    Abstract: Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors.
    Type: Application
    Filed: March 31, 2011
    Publication date: February 2, 2012
    Inventors: Roy G. Gordon, Adam S. Hock, Jaeyeong Heo, Prasert Sinsermsuksakul