Abstract: A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.

Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.

Abstract: Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

Abstract: Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

Abstract: Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

Abstract: Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to cells while electrophysiological data relating to cell membranes is obtained using the patch clamp technique. A SERS-facilitating assembly is coupled to a micropipette and is used in conjunction with a monochromatic light source for generating scattered light. Surface enhanced Raman spectroscopy is employed to obtain the chemical data. Electrophysiological data is obtained using the same micropipette to perform the patch clamp technique.

Abstract: A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. The 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tounge and groove device at the memory wafer top and bottom surfaces allows an accurate stack alignment. The memory stack also has micro-channels on the backside to allow fluid cooling. The memory stack is further diced at the fixed clock-cycle distance and is flipped on its side and re-assembled on to a template into a pseudo-wafer format. The top side wall of the assembly is polished and built with BEOL to fan-out and use the T&J fine pitch connection to join to the 2D logic wafer. The other side of the memory stack is polished, fanned-out, and bumped with C4 solder. The invention also comprises a process for manufacturing the device.

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to cells while electrophysiological data relating to cell membranes is obtained using the patch clamp technique. A SERS-facilitating assembly is coupled to a micropipette and is used in conjunction with a monochromatic light source for generating scattered light. Surface enhanced Raman spectroscopy is employed to obtain the chemical data. Electrophysiological data is obtained using the same micropipette to perform the patch clamp technique.

Abstract: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to cells while electrophysiological data relating to cell membranes is obtained using the patch clamp technique. A SERS-facilitating assembly is coupled to a micropipette and is used in conjunction with a monochromatic light source for generating scattered light. Surface enhanced Raman spectroscopy is employed to obtain the chemical data. Electrophysiological data is obtained using the same micropipette to perform the patch clamp technique.

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to body tissue and cells. The chemical environments of stimulation implants and drug-delivery catheters are spectroscopically monitored in real time using an implantable probe. The probe includes a surface enhancer that facilitates surface enhanced Raman spectroscopy in opposing relation to an array of optical fibers. Light emitted by the optical fibers can be employed for chemical detection and/or tissue stimulation. Wavelength and optical power are selected based on whether the probe is employed for such detection or stimulation. Fabrication of a probe assembly that enables surface enhanced Raman spectroscopy is further disclosed.

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to body tissue and cells. The chemical environments of stimulation implants and drug-delivery catheters are spectroscopically monitored in real time using an implantable probe. The probe includes a surface enhancer that facilitates surface enhanced Raman spectroscopy in opposing relation to an array of optical fibers. Light emitted by the optical fibers can be employed for chemical detection and/or tissue stimulation. Wavelength and optical power are selected based on whether the probe is employed for such detection or stimulation.

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to cells while electrophysiological data relating to cell membranes is obtained using the patch clamp technique. A SERS-facilitating assembly is coupled to a micropipette and is used in conjunction with a monochromatic light source for generating scattered light. Surface enhanced Raman spectroscopy is employed to obtain the chemical data. Electrophysiological data is obtained using the same micropipette to perform the patch clamp technique.

Abstract: A process and resultant article of manufacture made by such process comprises forming through vias needed to connect a bottom device layer in a bottom silicon wafer to the one in the top device layer in a top silicon wafer comprising a silicon-on-insulator (SOI) wafer. Through vias are disposed in such a way that they extend from the middle of the line (MOL) interconnect of the top wafer to the buried oxide (BOX) layer of the SOI wafer with appropriate insulation provided to isolate them from the SOI device layer.

Abstract: Lenses and methods for adjusting the focus of a lens include dividing multiple light sensors in a lens into four quadrants. A position of the lens relative to occlusion along a top and bottom edge of the lens is determined based on lengths of bit sequences from light sensors in each of the four quadrants. An optimal focal length for the lens is determined based on the position of the lens. The focal length of the lens is adjusted to match the optimal focal length.

Abstract: Methods of forming a lens include forming components on a lower substrate. The components are sealed on the lower substrate with a sealing layer. An upper substrate is formed over the sealing layer. The lower substrate is polished to a lower lens curvature.

Abstract: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Abstract: A volumetric integrated circuit manufacturing method is provided. The method includes assembling a slab element of elongate chips, exposing a wiring layer between adjacent elongate chips of the slab element, metallizing a surface of the slab element at and around the exposed wiring layer to form a metallized surface electrically coupled to the wiring layer and passivating the metallized surface to hermetically seal the metallized surface.

Abstract: A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tongue and groove device at the memory wafer top and bottom surfaces allows an accurate stack alignment. The memory stack also has micro-channels on the backside to allow fluid cooling, and is further diced at the fixed clock-cycle distance, and flipped on its side and re-assembled on to a template into a pseudo-wafer format. The top side wall of the assembly is polished and built with BEOL to fan-out and use the T&J fine pitch connection to join to the 2D logic wafer. The other side of the memory stack is polished, fanned-out, and bumped with C4 solder. The invention also comprises a process for manufacturing the device.