Abstract: A drive system includes a carrying device with a wearable carrying frame, an energy store carried by the carrying frame, and at least one electric drive motor carried by the carrying frame. A coupling device is configured to mechanically couple a work apparatus to the drive system. The carrying device is formed as a shoulder bag or backpack, having at least one strap that permits the carrying device to be worn over a shoulder of a user. Two straps may be provided that permit the carrying device to be worn over both shoulders of a user. Also disclosed is a tool having such a drive system and a work apparatus, which may be concrete vibrator.

Abstract: A compaction system has a compaction device with an electric motor for generating a compaction movement, an energy device for providing electric energy for the electric motor, a measurement device for measuring the current drawn by the electric motor, and an evaluation device for evaluating the current draw as measured by the measurement device and for determining, from this determination, the compaction progress in the medium being compacted. The evaluation device is arranged at least partly in an external device, spatially separate from the energy device and/or from the compaction device.

Abstract: A concrete compaction system includes an unbalance exciter for concrete compaction, a compaction detection device for detecting progress of the compaction in the concrete, and a vibration device for generating a haptic feedback when a prescribed progress of the compaction has been detected by the compaction detection device. An electric motor may drive the unbalance exciter and may be powered by an electric power supply and a converter device for converting an electric current from the electric power supply to a drive current for the electric motor. The compaction detection device may comprise a measurement device for measuring the current drawn from the electric motor. The compaction detection device may also comprise an evaluation device for evaluating the current drawn measured by the measurement device, for determining therefrom the progress of the compaction in the concrete, and for detecting whether a prescribed progress of the compaction has been achieved.

Abstract: A concrete compaction device includes a vibrator housing for immersion in flowable concrete, and an unbalance exciter which is driven by an electric motor and which is arranged in the vibrator housing. A current detection device detects the electric current absorbed by the electric motor. Ann evaluation device determines an operating state of the concrete compaction device based on the electric current that is currently detected. The operating state is selected from the group consisting of: positioning of the vibrator housing in the air, immersion of the vibrator housing in the concrete, performance of a compaction process with the vibrator housing immersed in the concrete, and emersion of the vibrator housing from the concrete. The evaluation device is configured to recognize all of these operating states.

Abstract: A material cutting device includes a rotatably mounted tool holder configured to carry a cutting tool and a drive for rotating the tool holder. The drive includes an electric motor with a rotor and a stator. The axis of rotation of the rotor of the electric motor and the axis of rotation of the tool holder are arranged coaxially. The stator encloses the rotor over an angle of less than 360 degrees.

Abstract: A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.

Abstract: A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

Abstract: A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

Abstract: A drive system includes a carrying device with a wearable carrying frame, an energy store carried by the carrying frame, and at least one electric drive motor carried by the carrying frame. A coupling device is configured to mechanically couple a work apparatus to the drive system. The carrying device is formed as a shoulder bag or backpack, having at least one strap that permits the carrying device to be worn over a shoulder of a user. Two straps may be provided that permit the carrying device to be worn over both shoulders of a user. Also disclosed is a tool having such a drive system and a work apparatus, which may be concrete vibrator.

Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

Abstract: A system and method for producing a medical bag with an HF welder that uses upper and lower dies each having a plurality of electrode lamellae arranged such that they are alternatingly polarized relative to adjacent lamellae and opposing lamellae. Interspersed dielectric materials may be used to impart contours onto the film material to produce a patterned bag.

Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

Abstract: A carrying device includes a carrying frame, an energy store carried by the carrying frame, a transformer device, carried by the carrying frame, for transforming an electric current drawn from the energy store, and an electrical connection device, carried by the carrying frame, for connecting the carrying device to a consumer. The carrying device is in the form of a shoulder bag or backpack having at least one strap for wearing the carrying device over one or both shoulders of a user.

Abstract: A drive system includes a carrying device with a wearable carrying frame, an energy store carried by the carrying frame, and at least one electric drive motor carried by the carrying frame. A coupling device is configured to mechanically couple a work apparatus to the drive system. The carrying device is formed as a shoulder bag or backpack, having at least one strap that permits the carrying device to be worn over a shoulder of a user. Two straps may provided that permit the carrying device to be worn over both shoulders of a user.

Abstract: A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

Abstract: A semiconductor device includes a semiconductor chip, an electrical connection element for electrically connecting the semiconductor device to a carrier, and a metallization adjoining the electrical connection element, the metallization contains porous nanocrystalline copper that contains portions of organic acids.