Abstract: The present invention provides SERF2, a nucleic acid encoding said SERF2 or a cell expressing SERF2 for use as a medicament, in particular for use for use in treating or preventing an atrophy disease or condition or for increasing cellular growth in a patient such as sarcopenia, cachexia, dystrophy, hypoplasia, hypotonia, or muscle loss, as well as in vitro methods suitable for cell culture proliferation and pharmaceutical compositions.

Abstract: A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor.

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: The invention relates to stathmin, stathmin, a nucleic acid encoding said stathmin or a cell expressing stathmin for use in the treatment of chronic wounds or disease- or medication-dependent impaired wound healing in a patient or for increasing or inducing the proliferation and/or migration of mesenchymal cells, of stem cells, for stimulating immune cells, preferably natural killer cells, for stimulating fibroblasts, for stimulating epithelial cells, preferably epithelial cells of the epidermis, or for stimulating angiogenesis.

Abstract: A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a ceramic-forming polymer precursor.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.

Abstract: A piece of equipment which has a ground contact device for working on a ground region located below the ground contact device in the working position of the piece of equipment, a driving device which can be operated by an electric motor in order to produce a working movement of the ground contact device, an electrical energy accumulator, enclosed by a housing, for supplying the electric motor with electrical energy, and a covering device for covering the housing and thus the energy accumulator, which covering device is arranged above the energy accumulator in the working position. The piece of equipment may for example be a tamper, a vibration plate, a roller, or a breaker.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor.

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10?4 mg/cm2 to 0.1 mg/cm2.

Abstract: A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

Abstract: A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

Abstract: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.

Abstract: A percussive mechanism, which is provided in the form of an, e.g. pneumatic spring percussive mechanism, comprises an electrodynamic linear drive, a drive piston, which can be reciprocally moved inside a percussive mechanism housing by the linear drive, and a percussive piston. An additional hollow space is provided in front of and/or behind the drive piston and can be isolated at least in part from the surrounding area so that a pneumatic spring can be created in the additional hollow space. The pneumatic spring slows the drive piston at its returning points and facilitates a returning motion without loading the electrodynamic linear drive.

Abstract: A percussion mechanism that has a motor, a drive piston which can be moved to and fro in a guide cylinder by the motor, and a percussion piston. A coupling device is active between the drive piston and the percussion piston, via which coupling device the movement of the drive piston is transmitted to the percussion piston. The motor can be configured as a reluctance motor or as a synchronous motor. The motor can be actuable in such a way that different rotational speeds of the rotor can be generated within a percussion cycle and/or from percussion cycle to percussion cycle.