Patents by Inventor Ruey-Hsin Liu

Ruey-Hsin Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210273069
    Abstract: A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions.
    Type: Application
    Filed: July 15, 2020
    Publication date: September 2, 2021
    Inventors: Chen-Liang Chu, Chien-Chih Chou, Chih-Chang Cheng, Yi-Huan Chen, Kong-Beng Thei, Ming-Ta Lei, Ruey-Hsin Liu, Ta-Yuan Kung
  • Patent number: 11107899
    Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ming-Ta Lei, Ruey-Hsin Liu, Shih-Fen Huang
  • Patent number: 11088277
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: August 10, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yogendra Yadav, Chi-Chih Chen, Ruey-Hsin Liu, Chih-Wen Yao
  • Patent number: 11088085
    Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes an isolation structure disposed in a semiconductor substrate, where an inner perimeter of the isolation structure demarcates a device region of the semiconductor substrate. A gate is disposed over the device region, where an outer perimeter of the gate is disposed within the inner perimeter of the isolation structure. A first source/drain region is disposed in the device region and on a first side of the gate. A second source/drain region is disposed in the device region and on a second side of the gate opposite the first side. A silicide blocking structure partially covers the gate, partially covers the first source/drain region, and partially covers the isolation structure, where a first sidewall of the silicide blocking structure is disposed between first opposite sidewalls of the gate.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ruey-Hsin Liu
  • Publication number: 20210226025
    Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.
    Type: Application
    Filed: April 7, 2021
    Publication date: July 22, 2021
    Inventors: TA-YUAN KUNG, RUEY-HSIN LIU, CHEN-LIANG CHU, CHIH-WEN YAO, MING-TA LEI
  • Publication number: 20210202708
    Abstract: A semiconductor device includes a substrate and a gate structure over the substrate. The semiconductor device includes a source in the substrate on a first side of the gate structure. The semiconductor device further includes a drain in the substrate on a second side of the gate structure. The semiconductor device further includes a first well having a first dopant type, wherein the first well contacts at least two surfaces of the source. The semiconductor device further includes a second well having the first dopant type, wherein the second well contacts at least two surfaces of the drain. The semiconductor device further includes a deep well below the first well and below the second well, wherein the second well extends between the first well and the deep well. In some embodiments, the deep well has a second dopant type, and the second dopant type is opposite the first dopant type.
    Type: Application
    Filed: March 16, 2021
    Publication date: July 1, 2021
    Inventors: Chih-Chang CHENG, Fu-Yu CHU, Ruey-Hsin LIU
  • Patent number: 11031495
    Abstract: A method includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, forming a first trench and a second trench through in the first semiconductor layer and the second semiconductor layer, wherein a width of the second trench is different from a width of the first trench, forming a dielectric region in the first trench and forming a first gate region in the first trench and over the dielectric region, and a second gate region in the second trench.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wai Ng, Hsueh-Liang Chou, Po-Chih Su, Ruey-Hsin Liu
  • Publication number: 20210167205
    Abstract: A high-voltage device includes a substrate, at least a first isolation in the substrate, a first well region, a frame-like gate structure over the first well region and covering a portion of the first isolation, a drain region in the first well region and separated from the frame-like gate structure by the first isolation, and a source region separated from the drain region by the first isolation and the frame-like gate structure. The first well region, the drain region and the source region include a first conductivity type, and the substrate includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.
    Type: Application
    Filed: June 19, 2020
    Publication date: June 3, 2021
    Inventors: HUNG-SEN WANG, YUN-TA TSAI, RUEY-HSIN LIU, SHIH-FEN HUANG, HO-CHUN LIOU
  • Patent number: 11011610
    Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: May 18, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ming-Ta Lei, Ruey-Hsin Liu, Shih-Fen Huang
  • Patent number: 10985256
    Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, a pair of source/drain regions, a pair of first well regions, a second well region, a pair of contact regions and a pair of third well regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric. The pair of first well regions are disposed under the pair of source/drain regions. The second well region is disposed between the pair of first well regions. The pair of contact regions are disposed on opposing sides of the pair of source/drain regions. The pair of third well regions are disposed under the pair of contact regions.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: April 20, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ta-Yuan Kung, Ruey-Hsin Liu, Chen-Liang Chu, Chih-Wen Yao, Ming-Ta Lei
  • Patent number: 10957772
    Abstract: A semiconductor device includes a substrate and a gate structure over a top surface of the substrate. The semiconductor device further includes a source in the substrate on a first side of the gate structure. The semiconductor device further includes a drain in the substrate on a second side of the gate structure. The semiconductor device further includes a first well having a first dopant type, wherein the first well surrounds the source. The semiconductor device further includes a second well having a second dopant type opposite the first dopant type, wherein the second well surrounds the drain, an entirety of an upper most surface of the second well between the drain and the first well is coplanar with the top surface of the substrate, and the second well is spaced from the first well.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ruey-Hsin Liu
  • Publication number: 20210057412
    Abstract: A device includes a vertical transistor comprising a first gate in a first trench, wherein the first gate comprises a dielectric layer and a gate region over the dielectric layer, and a second gate in a second trench, a high voltage lateral transistor immediately adjacent to the vertical transistor and a low voltage lateral transistor, wherein the high voltage lateral transistor is between the vertical transistor and the low voltage lateral transistor.
    Type: Application
    Filed: November 4, 2020
    Publication date: February 25, 2021
    Inventors: Chun-Wai Ng, Hsueh-Liang Chou, Po-Chih Su, Ruey-Hsin Liu
  • Patent number: 10840246
    Abstract: A device includes a vertical transistor comprising a first gate in a first trench, wherein the first gate comprises a dielectric layer and a gate region over the dielectric layer, and a second gate in a second trench, a high voltage lateral transistor immediately adjacent to the vertical transistor and a low voltage lateral transistor, wherein the high voltage lateral transistor is between the vertical transistor and the low voltage lateral transistor.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wai Ng, Hsueh-Liang Chou, Po-Chih Su, Ruey-Hsin Liu
  • Publication number: 20200343195
    Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes an isolation structure disposed in a semiconductor substrate, where an inner perimeter of the isolation structure demarcates a device region of the semiconductor substrate. A gate is disposed over the device region, where an outer perimeter of the gate is disposed within the inner perimeter of the isolation structure. A first source/drain region is disposed in the device region and on a first side of the gate. A second source/drain region is disposed in the device region and on a second side of the gate opposite the first side. A silicide blocking structure partially covers the gate, partially covers the first source/drain region, and partially covers the isolation structure, where a first sidewall of the silicide blocking structure is disposed between first opposite sidewalls of the gate.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ruey-Hsin Liu
  • Publication number: 20200303496
    Abstract: High voltage semiconductor devices are described herein. An exemplary semiconductor device includes a first doped region and a second doped region disposed in a substrate. The first doped region and the second doped region are oppositely doped and adjacently disposed in the substrate. A first isolation structure and a second isolation structure are disposed over the substrate, such that each are disposed at least partially over the first doped region. The first isolation structure is spaced apart from the second isolation structure. A resistor is disposed over a portion of the first isolation structure and electrically coupled to the first doped region. A field plate disposed over a portion of the second doped region and electrically coupled to the second doped region.
    Type: Application
    Filed: June 12, 2020
    Publication date: September 24, 2020
    Inventors: Ru-Yi SU, Fu-Chih YANG, Chun Lin TSAI, Chih-Chang CHENG, Ruey-Hsin LIU
  • Publication number: 20200295148
    Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, a pair of source/drain regions, a pair of first well regions, a second well region, a pair of contact regions and a pair of third well regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric. The pair of first well regions are disposed under the pair of source/drain regions. The second well region is disposed between the pair of first well regions. The pair of contact regions are disposed on opposing sides of the pair of source/drain regions. The pair of third well regions are disposed under the pair of contact regions.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: TA-YUAN KUNG, RUEY-HSIN LIU, CHEN-LIANG CHU, CHIH-WEN YAO, MING-TA LEI
  • Publication number: 20200279948
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
    Type: Application
    Filed: May 19, 2020
    Publication date: September 3, 2020
    Inventors: YOGENDRA YADAV, CHI-CHIH CHEN, RUEY-HSIN LIU, CHIH-WEN YAO
  • Publication number: 20200273982
    Abstract: A method includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, forming a first trench and a second trench through in the first semiconductor layer and the second semiconductor layer, wherein a width of the second trench is different from a width of the first trench, forming a dielectric region in the first trench and forming a first gate region in the first trench and over the dielectric region, and a second gate region in the second trench.
    Type: Application
    Filed: May 12, 2020
    Publication date: August 27, 2020
    Inventors: Chun-Wai Ng, Hsueh-Liang Chou, Po-Chih Su, Ruey-Hsin Liu
  • Patent number: 10727334
    Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the extended drift region, a source region in the channel region, a first dielectric layer with a first thickness formed over the extended drift region, a second dielectric layer with a second thickness formed over the extended drift region and the channel region, wherein the first thickness is greater than the second thickness, and wherein the first dielectric layer and the second dielectric layer form two steps, a first gate formed over the first dielectric layer and a second gate formed above the second dielectric layer.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wai Ng, Ruey-Hsin Liu, Jun Cai, Hsueh-Liang Chou, Chi-Chih Chen
  • Publication number: 20200227529
    Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 16, 2020
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ming-Ta Lei, Ruey-Hsin Liu, Shih-Fen Huang