Abstract: Various arrangements are presented for determining a state of a traffic light. A first analysis of a scene may be performed that includes the traffic light. The first analysis may result in the output of a first classification result and a first confidence score. A second, different analysis of the scene may be performed that also outputs a classification result and a confidence score. A fusion process may be performed to fuse the classification results into a fused classification result based on the confidence scores and one or more weighting metrics. A vehicle may then be driven at least partially based on the fused classification result.

Abstract: A method, apparatus and computer program product are provided for assisting a user in locating and/or identifying a vehicle that a user has requested. In some examples, the vehicle may be a self-driving or autonomous car. In some examples, the vehicle may not necessarily arrive at the exact location requested by the user, but may be in close proximity to the requested location. Location information of the vehicle, such as a detected real-time location, photographs of the environment surrounding the vehicle, and/or directions to the vehicle may be provided to the user who has requested the vehicle. The user may then efficiently identify the vehicle that was sent for pickup. A key may be associated with the pickup request. The assigned vehicle may communicate the key to the user, for example, by flashing a series of lights indicative of the key, so that the user can identify the vehicle.

Abstract: A near field communication (NFC) device configured to use in preparing a carrier signal for active load modulation supporting both synchronous and asynchronous transmissions. The NFC device comprises a local clock generator for generating a reference clock signal (REF_CLK), a clock extractor for recovering a clock signal (EXT_CLK) generated by an NFC initiator device, a frequency tracking module (FTM) for performing a frequency tracking operation based on an input clock signal (REF_CLK or EXT_CLK) to produce a FTM output with its frequency aligned with the input clock signal, and a phase tracking module (PTM) for performing a phase tracking operation on the FTM output based on EXT_CLK to produce a PTM output with its phase aligned with EXT_CLK.

Abstract: Embodiments of the invention provide a system and method for direct RF sampling a Near Field Communication (NFC) receiver at a rate higher than the carrier frequency by reducing and shifting requirements at a front end analog module to a digital module.

Abstract: The present invention provides a method for preparing a 6-aminohexyl lactoside-NOTA conjugate. The preparation method comprises brominating perbenzoylated lactose with hydrobromic acid; glycosylating 6-azidohexanol to obtain 6-azidohexyl perbenzoyl lactoside; and deprotecting this precursor in two steps to obtain 6-aminohexyl lactoside and conjugating 6-aminohexyl lactoside to NCS-benzyl-NODA GA (i.e. 2,2?-(7-(1-carboxy-4-((4-isothiocyanate benzyl) amino)-4-oxobutyl)-1,4,7-triazonane-1,4-diyl) diacetic acid) in triethyl amine as an alkaline solvent, to obtain a 6-aminohexyl lactoside-NCS-benzyl-NODA GA conjugate. In this novel preparation method, no deglycosylated side product is produced, such that the yield is considerably increased to 46%. Therefore, the method is suitable for future massive production since the requirement for repeated preparations for massive production is reduced, and the impurities produced in the previously scaled-up preparation process are not present.

Abstract: A system and method for an NFC card for use in asynchronous NFC card emulation mode transmission. The method comprises estimating carrier frequency offset between a carrier frequency of a NFC reader and a carrier frequency of the NFC card, adjusting digital baseband sampling of the baseband sample output at the NFC card emulation mode transmitter based on the estimated carrier frequency offset to obtain an adjusted baseband sample output and modulating a RF transmitter in the NFC card emulation mode transmitter based on the adjusted baseband sample output.

Abstract: Embodiments of the invention provide a system and method for direct RF sampling a Near Field Communication (NFC) receiver at a rate higher than the carrier frequency by reducing and shifting requirements at a front end analog module to a digital module.

Abstract: A near field communication (NFC) device configured to use in preparing a carrier signal for active load modulation supporting both synchronous and asynchronous transmissions. The NFC device comprises a local clock generator for generating a reference clock signal (REF_CLK), a clock extractor for recovering a clock signal (EXT_CLK) generated by an NFC initiator device, a frequency tracking module (FTM) for performing a frequency tracking operation based on an input clock signal (REF_CLK or EXT_CLK) to produce a FTM output with its frequency aligned with the input clock signal, and a phase tracking module (PTM) for performing a phase tracking operation on the FTM output based on EXT_CLK to produce a PTM output with its phase aligned with EXT_CLK.

Abstract: The invention provides a method and device for Radio Frequency (RF) limiting. The device for RF limiting comprises: an Analog Limiter configured to limit a voltage of a RF input to a predetermined safe range during power-off or power-up until a disable control signal is received from the Digital Controller, a Sensing Circuit configured to sense a plurality of shunting currents provided by the Analog Limiter in sequence to determine a value of each bit of a preset current sensing code and sense the limiting voltage, a Digital Controller configured to control the Digital Limiter to perform RF limiting function based on the value of each bit of the preset current sensing code, and control the Analog Limiter to stop limiting the voltage of the RF input if the limiting voltage is within a predetermined acceptable voltage range.

Abstract: The present invention provides a method for preparing a 6-aminohexyl lactoside-NOTA conjugate. The preparation method comprises brominating perbenzoylated lactose with hydrobromic acid; glycosylating 6-azidohexanol to obtain 6-azidohexyl perbenzoyl lactoside; and deprotecting this precursor in two steps to obtain 6-aminohexyl lactoside and conjugating 6-aminohexyl lactoside to NCS-benzyl-NODA GA (i.e. 2,2?-(7-(1-carboxy-4-((4-isothiocyanate benzyl) amino)-4-oxobutyl)-1,4,7-triazonane-1,4-diyl) diacetic acid) in triethyl amine as an alkaline solvent, to obtain a 6-aminohexyl lactoside-NCS-benzyl-NODA GA conjugate. In this novel preparation method, no deglycosylated side product is produced, such that the yield is considerably increased to 46%. Therefore, the method is suitable for future massive production since the requirement for repeated preparations for massive production is reduced, and the impurities produced in the previously scaled-up preparation process are not present.

Abstract: A screening machine for superfine powder. The screening machine includes a casing, a screen drum, a funnel, a negative pressure chamber, a rotary air spray pipe, a drive motor, a blast pipe, and a feed pipe. The screen drum is disposed in the middle part of the inner cavity of the casing. The funnel is disposed beneath the casing. The opening of the screen drum is arranged on the bottom of the screen drum and communicates with the upper opening of the funnel. The inner cavity of the casing communicates with the external induced draft fan via the negative pressure chamber disposed on the upper part of the casing. The rotary air spray pipe is arranged in the space between the screen drum and the casing. The middle part of the transverse pipe is connected via a transmission with the drive motor.

Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: Described herein is a method for obtaining a three-dimensional nanostructure array on an aluminum substrate. The method includes anodizing the aluminum substrate; forming an oxide layer on the aluminum substrate; texturizing the aluminum substrate; etching the oxide layer from the aluminum substrate to expose the texturized aluminum substrate; and forming a three-dimensional aluminum nanostructure array on the aluminum substrate. The three-dimensional nanostructure array, coated with a light absorber, is utilized in a thin film solar cell or photovoltaic cell.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed in or on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: Various embodiments of this disclosure may describe a bandpass sigma-delta modulator (BP ??M) comprising an electromechanical filter, a quantizer coupled to the electromechanical filter, and a feedback circuit coupled between the quantizer and the electromechanical filter. Other embodiments be also be disclosed or claimed.

Abstract: Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.

Abstract: An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.