Abstract: An analog machine learning architecture uses modular analog multiplier-accumulator (AMAC) elements of fixed size to form a machine learning (ML) system with increasing feature map size. A single 3×3×64 AMAC array is arranged to provide a three layer ML architecture with first layer 3×3×64, second layer 3×3×128, and third layer 3×3×256 using arrangements of single 3×3×64 AMACs arranged in parallel, where the bias of each AMAC is separately established in a unique interval of time.

Abstract: A Gain Balanced Analog Multiply-Accumulator (AMAC) has an inference memory which outputs subsets of inference data comprising X input values and one or more associated W coefficient values, and a number of Analog Multiplier-Accumulator Unit Elements (AMAC UE) in equal number to the number of X input values in each subset of inference data. The X input values and one or more W coefficient values from the inference memory are applied to each AMAC UE to generate a charge corresponding to the multiplication of X input value and W coefficient value of each AMAC UE which is transferred to a shared analog charge bus. The inference memory applies the X input value and W coefficient values of each subset to a different AMAC UE on subsequent cycles to balance the gain of the AMAC such that gain differences from one AMAC UE to another are not cumulative.

Abstract: A Bias Unit Element (UE) comprises NAND gates with complementary outputs, the complementary outputs coupled through a charge transfer capacitor to a differential charge transfer bus comprising positive charge transfer lines and negative charge transfer lines. Each line of the differential charge transfer bus has a particular binary weighted line weight, such as 1, 2, 4, 2, 4, 8, and 4, 8, 16. Digital bias inputs are provided to the Bias UE NAND gate inputs, with a clear bit to initialize charge, and a sign input for enabling one of a positive Bias UE or negative Bias UE. A low-to-high transition causes a transfer of charge to the binary weighted charge transfer bus, thereby adding or subtracting a bias value from the charge transfer bus.

Abstract: An architecture for a chopper stabilized multiplier-accumulator (MAC) uses a chop clock and common Unit Element (UE), the MAC formed as a plurality of MAC UEs receiving X and W values and a sign bit exclusive ORed with the chop clock, a plurality of Bias UEs receiving E value and a sign bit exclusive ORed with the chop clock, and a plurality of Analog to Digital Conversion (ADC) UEs which collectively perform a scalable MAC operation and generate a binary result. Each MAC UE, BIAS UE and ADC UE comprises groups of NAND gates with complementary outputs arranged in NAND-groups, each NAND gate coupled to a differential charge transfer bus through a binary weighted charge transfer capacitor. The analog charge transfer bus is coupled to groups of ADC UEs with an ADC controller which enables and disables the ADC UEs using successive approximation to determine the accumulated multiplication result.

Abstract: A Unit Element (UE) has a digital X input and a digital W input, and comprises groups of NAND gates generating complementary outputs which are coupled to differential charge transfer lines through respective charge transfer capacitor Cu. The number of bits in the X input determines the number of NAND gates in a NAND-group and the number of bits in the W input determines the number of NAND groups. Each NAND-group receives one bit of the W input applied to all of the NAND gates of the NAND-group, and each unit element having the bits of X applied to each associated NAND gate input of each unit element. The NAND gate outputs are coupled through a charge transfer capacitor Cu to charge transfer lines. Multiple Unit Elements may be placed in parallel to sum and scale the charges from the charge transfer lines, the charges coupled to an analog to digital converter which forms the dot product output.

Abstract: A plurality of unit elements share a charge transfer bus, each unit element accepts A and B digital inputs and generates a product P as an analog charge transferred to the charge transfer bus, each unit element comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. Each unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates of each unit element are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors which sum and scale the charges contributed by all unit elements to the charge transfer lines according to a bit weight and converted to a digital value output.

Abstract: A Unit Element (UE) has a digital X input and a digital W input, and comprises groups of NAND gates generating complementary outputs which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The number of bits in the X input determines the number of NAND gates in a NAND-group and the number of bits in the W input determines the number of NAND groups. Each NAND-group receives one bit of the W input applied to all of the NAND gates of the NAND-group, and each unit element having the bits of X applied to each associated NAND gate input of each unit element. The NAND gate outputs are coupled through binary weighted charge transfer capacitors to a positive charge transfer line and negative charge transfer line.

Abstract: A differential multiplier-accumulator accepts A and B digital inputs plus a sign bit and generates a dot product P by applying the bits of the A input and the bits of the B inputs to respective positive and negative unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. One of the positive and negative unit element is enabled by the sign bit, the enabled unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each positive and negative unit element having the bits of A applied to each associated AND gate input of each unit element, which charge to charge transfer lines, and the charge transfer lines are coupled to binary weighted charge summing capacitors and to an analog to digital converter to generate a digital output product.

Abstract: A differential multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to respective positive and negative unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. Each positive and negative unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each positive and negative unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors and to an analog to digital converter to generate a digital output product. The charge transfer lines may span multiple unit elements.

Abstract: A multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. The number of bits in the B input is a number of AND-groups and the number of bits in A is the number of AND gates in an AND-group. Each unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors which sum and scale the charges from the charge transfer lines, the charge coupled to an analog to digital converter which forms the dot product output. The charge transfer lines may span multiple unit elements.

Abstract: Arrays of optical emitters, modulators, receivers and/or optoelectronic devices used in communication are printed with redundant elements to provide multiple solutions to select from at screening time to improve overall yield. Multiple optoelectronic devices are printed on common chiplets, tightly packed, or printed in sub-arrays.

Abstract: A multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. The number of bits in the B input is a number of AND-groups and the number of bits in A is the number of AND gates in an AND-group. Each unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors which sum and scale the charges from the charge transfer lines, the charge coupled to an analog to digital converter which forms the dot product output. The charge transfer lines may span multiple unit elements.

Abstract: Arrays of optical emitters, modulators, receivers and/or optoelectronic devices used in communication are printed with redundant elements to provide multiple solutions to select from at screening time to improve overall yield. Multiple optoelectronic devices are printed on common chiplets, tightly packed, or printed in sub-arrays.

Abstract: Mass-transfer printing an optical receiver element that also has part of the receiver front end integrated with the purpose of lowering the capacitance exposed to the sensitive input of the RX frontend. An optical receiver element with integrated front end where the silicon layer of the optical element is used to implement a silicon field-effect transistor process which is then used to incorporate the resistive transimpedance amplifier adjacent to the photodiode, resulting in a lower capacitance.

Abstract: System architecture for devices with integrated electrical and optical power and signal distribution coupled with thermal dissipation. Systems include an electrical signal and electrical power delivery subsystem, an optical engine, an electrical interposer between the electrical signal and electrical power delivery subsystem and the optical engine, and an optical element to exchange optical signals with the optical engine and to exchange optical signals and optical power with an optical interface. Electrical signals and electrical power delivery from the electrical interposer to the optical engine and optical signal delivery from the optical element to the optical engine are provided through a common plane on the optical engine.

Abstract: The architecture integrates electronic circuitry with highly parallel (>100 elements) surface-normal optoelectronic devices for the purpose of transmitting optical communication signals over a transmission channel. Local electronic circuitry is integrated very close (<100 um) to the optical element, which simplifies the electrical characteristics such that the electronic circuitry can perform better in terms of power dissipation, area utilization, and accuracy of the transmitted and received optical emissions.

Abstract: Systems and methods for enabling robust fault tolerance targeting runtime failures in multi-wavelength optical links. The proposed embodiment relies on built-in lane redundancy where failure can be detected and repaired during runtime and in an online fashion. Features allow out-of-band and side-band communication.

Abstract: An architecture for a multiplier-accumulator (MAC) uses a common Unit Element (UE) for each aspect of operation, the MAC formed as a plurality of MAC UEs, a plurality of Bias UEs, and a plurality of Analog to Digital Conversion (ADC) UEs which collectively perform a scalable MAC operation and generate a binary result. Each MAC UE, BIAS UE and ADC UE comprises groups of NAND gates with complementary outputs arranged in NAND-groups, each NAND gate coupled to a differential charge transfer bus through a binary weighted charge transfer capacitor to form an analog multiplication product as a charge applied to the differential charge transfer bus. The analog charge transfer bus is coupled to groups of ADC UEs with an ADC controller which enables and disables the ADC UEs using successive approximation to determine the accumulated multiplication result.

Abstract: A Bias Unit Element (UE) has a digital input, a sign input, and a chop clock. The sign input is exclusive ORed with the chop clock to generate a signed chop clock. Each Bias UE comprises a positive Bias UE and a negative Bias UE, each comprising groups of NAND gates generating an output and a complementary output, each of which are coupled to differential charge transfer lines through binary weighted charge transfer capacitors to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The chopped sign input enables the positive Bias UE when the sign bit is positive and enables the negative Bias UE when the sign bit is negative.

Abstract: An analog machine learning architecture uses modular analog multiplier-accumulator (AMAC) elements of fixed size to form a machine learning (ML) system with increasing feature map size. A single 3 × 3 × 64 AMAC array is arranged to provide a three layer ML architecture with first layer 3×3×64, second layer 3×3×128, and third layer 3×3×256 using arrangements of single 3×3×64 AMACs arranged in parallel, where the bias of each AMAC is separately established in a unique interval of time.