Abstract: A differential multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to respective positive and negative unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. Each positive and negative unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each positive and negative unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors and to an analog to digital converter to generate a digital output product. The charge transfer lines may span multiple unit elements.

Abstract: A multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. The number of bits in the B input is a number of AND-groups and the number of bits in A is the number of AND gates in an AND-group. Each unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors which sum and scale the charges from the charge transfer lines, the charge coupled to an analog to digital converter which forms the dot product output. The charge transfer lines may span multiple unit elements.

Abstract: Arrays of optical emitters, modulators, receivers and/or optoelectronic devices used in communication are printed with redundant elements to provide multiple solutions to select from at screening time to improve overall yield. Multiple optoelectronic devices are printed on common chiplets, tightly packed, or printed in sub-arrays.

Abstract: A multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. The number of bits in the B input is a number of AND-groups and the number of bits in A is the number of AND gates in an AND-group. Each unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors which sum and scale the charges from the charge transfer lines, the charge coupled to an analog to digital converter which forms the dot product output. The charge transfer lines may span multiple unit elements.

Abstract: Mass-transfer printing an optical receiver element that also has part of the receiver front end integrated with the purpose of lowering the capacitance exposed to the sensitive input of the RX frontend. An optical receiver element with integrated front end where the silicon layer of the optical element is used to implement a silicon field-effect transistor process which is then used to incorporate the resistive transimpedance amplifier adjacent to the photodiode, resulting in a lower capacitance.

Abstract: Arrays of optical emitters, modulators, receivers and/or optoelectronic devices used in communication are printed with redundant elements to provide multiple solutions to select from at screening time to improve overall yield. Multiple optoelectronic devices are printed on common chiplets, tightly packed, or printed in sub-arrays.

Abstract: System architecture for devices with integrated electrical and optical power and signal distribution coupled with thermal dissipation. Systems include an electrical signal and electrical power delivery subsystem, an optical engine, an electrical interposer between the electrical signal and electrical power delivery subsystem and the optical engine, and an optical element to exchange optical signals with the optical engine and to exchange optical signals and optical power with an optical interface. Electrical signals and electrical power delivery from the electrical interposer to the optical engine and optical signal delivery from the optical element to the optical engine are provided through a common plane on the optical engine.

Abstract: Systems and methods for enabling robust fault tolerance targeting runtime failures in multi-wavelength optical links. The proposed embodiment relies on built-in lane redundancy where failure can be detected and repaired during runtime and in an online fashion. Features allow out-of-band and side-band communication.

Abstract: The architecture integrates electronic circuitry with highly parallel (>100 elements) surface-normal optoelectronic devices for the purpose of transmitting optical communication signals over a transmission channel. Local electronic circuitry is integrated very close (<100 um) to the optical element, which simplifies the electrical characteristics such that the electronic circuitry can perform better in terms of power dissipation, area utilization, and accuracy of the transmitted and received optical emissions.

Abstract: A Bias Unit Element (UE) has a digital input, a sign input, and a chop clock. The sign input is exclusive ORed with the chop clock to generate a signed chop clock. Each Bias UE comprises a positive Bias UE and a negative Bias UE, each comprising groups of NAND gates generating an output and a complementary output, each of which are coupled to differential charge transfer lines through binary weighted charge transfer capacitors to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The chopped sign input enables the positive Bias UE when the sign bit is positive and enables the negative Bias UE when the sign bit is negative.

Abstract: An architecture for a multiplier-accumulator (MAC) uses a common Unit Element (UE) for each aspect of operation, the MAC formed as a plurality of MAC UEs, a plurality of Bias UEs, and a plurality of Analog to Digital Conversion (ADC) UEs which collectively perform a scalable MAC operation and generate a binary result. Each MAC UE, BIAS UE and ADC UE comprises groups of NAND gates with complementary outputs arranged in NAND-groups, each NAND gate coupled to a differential charge transfer bus through a binary weighted charge transfer capacitor to form an analog multiplication product as a charge applied to the differential charge transfer bus. The analog charge transfer bus is coupled to groups of ADC UEs with an ADC controller which enables and disables the ADC UEs using successive approximation to determine the accumulated multiplication result.

Abstract: An analog machine learning architecture uses modular analog multiplier-accumulator (AMAC) elements of fixed size to form a machine learning (ML) system with increasing feature map size. A single 3 × 3 × 64 AMAC array is arranged to provide a three layer ML architecture with first layer 3×3×64, second layer 3×3×128, and third layer 3×3×256 using arrangements of single 3×3×64 AMACs arranged in parallel, where the bias of each AMAC is separately established in a unique interval of time.

Abstract: A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.

Abstract: A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.

Abstract: A planar fabrication charge transfer capacitor for coupling charge from a Unit Element (UE) generates a positive charge first output V_PP and a positive charge second output V_NP, the first output coupled to a positive charge line comprising a continuous first planar conductor, a continuous second planar conductor parallel to the first planar conductor, and a continuous third planar conductor parallel to the first planar conductor and second planar conductor, the charge transfer capacitor comprising, in sequence: a first co-planar conductor segment, the first planar conductor, a second co-planar conductor segment, the second planar conductor, a third co-planar conductor segment, the third planar conductor, and a fourth coplanar conductor segment, the first and third coplanar conductor segments capacitively edge coupled to the UE first output V_PP, the second and fourth coplanar conductor segments capacitively edge coupled to the UE second output V_NP.

Abstract: A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (VT) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.

Abstract: A Bias Unit Element (UE) has a digital input and sign input, and comprises a positive Bias UE and a negative Bias UE, each comprising groups of NAND gates generating an output and a complementary output, each of which are coupled to differential charge transfer lines through binary weighted charge transfer capacitors to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The sign input enables the positive Bias UE when the sign bit is positive and enables the negative Bias UE when the sign bit is negative.

Abstract: A Unit Element (UE) has a positive UE and a negative UE, each having a digital X input and a digital W input with a sign bit, the sign bit is exclusive ORed with a chop clock to generate a chopped sign bit. The positive UE is enabled when the chopped sign bit is positive and the negative UE is enabled when the chopped sign bit is negative. Each positive and negative UE comprises groups of NAND gates generating an output and complementary output which are coupled to a differential charge transfer bus comprising a positive charge transfer line and a negative charge transfer line. The NAND gate outputs and complementary outputs are coupled through binary weighted charge transfer capacitors the positive charge transfer line and negative charge transfer line.

Abstract: An architecture for a chopper stabilized multiplier-accumulator (MAC) uses a chop clock and common Unit Element (UE), the MAC formed as a plurality of MAC UEs receiving X and W values and a sign bit exclusive ORed with the chop clock, a plurality of Bias UEs receiving E value and a sign bit exclusive ORed with the chop clock, and a plurality of Analog to Digital Conversion (ADC) UEs which collectively perform a scalable MAC operation and generate a binary result. Each MAC UE, BIAS UE and ADC UE comprises groups of NAND gates with complementary outputs arranged in NAND-groups, each NAND gate coupled to a differential charge transfer bus through a binary weighted charge transfer capacitor. The analog charge transfer bus is coupled to groups of ADC UEs with an ADC controller which enables and disables the ADC UEs using successive approximation to determine the accumulated multiplication result.

Abstract: An architecture for a multiplier-accumulator (MAC) uses a common Unit Element (UE) for each aspect of operation, the MAC formed as a plurality of MAC UEs, a plurality of Bias UEs, and a plurality of Analog to Digital Conversion (ADC) UEs which collectively perform a scalable MAC operation and generate a binary result. Each MAC UE, BIAS UE and ADC UE comprises groups of NAND gates with complementary outputs arranged in NAND-groups, each NAND gate coupled to a differential charge transfer bus through a binary weighted charge transfer capacitor to form an analog multiplication product as a charge applied to the differential charge transfer bus. The analog charge transfer bus is coupled to groups of ADC UEs with an ADC controller which enables and disables the ADC UEs using successive approximation to determine the accumulated multiplication result.