Abstract: A thermal imaging system includes a pixel array having a plurality of pixel groups. Each pixel group including a plurality of pixel rows and a trigger sense circuit including a pixel group input line in signal communication with the plurality of bolometer pixels pixel row containing a plurality of bolometer pixels. The pixel group further includes a selector switch that selectively establishes an electrical connection between the pixel group and the trigger sense circuit. The selector switch operates in a first state to disconnect the pixel group from the pixel group input line while connecting the pixel group to the integration unit such that the integration unit generates the image, and a second state to disconnect the pixel group from the integration unit while connecting the pixel group to the pixel group input line such that the trigger sense circuit monitors the pixel group for a high temperature bolometer.

Abstract: A thermal imaging system includes a pixel array having a plurality of pixel groups. Each pixel group including a plurality of pixel rows and a trigger sense circuit including a pixel group input line in signal communication with the plurality of bolometer pixels pixel row containing a plurality of bolometer pixels. The pixel group further includes a selector switch that selectively establishes an electrical connection between the pixel group and the trigger sense circuit. The selector switch operates in a first state to disconnect the pixel group from the pixel group input line while connecting the pixel group to the integration unit such that the integration unit generates the image, and a second state to disconnect the pixel group from the integration unit while connecting the pixel group to the pixel group input line such that the trigger sense circuit monitors the pixel group for a high temperature bolometer.

Abstract: A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.