Abstract: An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer.

Abstract: The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.