Abstract: A light emitting device includes a resin-molded body including: a light emitting window, a white portion, and a black portion, wherein, in a top plan view of the light emitting device, the white portion surrounds the light emitting window, and the black portion surrounds the white portion; an electrode protruding from an outer surface of the resin-molded body; and a plurality of light emitting elements mounted in an area surrounded by the white portion, the plurality of light emitting elements including at least two light emitting elements that are different in type from one another.

Abstract: A light emitting device includes a resin-molded body including: a light emitting window, a white portion, and a black portion, wherein, in a top plan view of the light emitting device, the white portion surrounds the light emitting window, and the black portion surrounds the white portion; an electrode protruding from an outer surface of the resin-molded body; and a plurality of light emitting elements mounted in an area surrounded by the white portion, the plurality of light emitting elements including at least two light emitting elements that are different in type from one another.

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

Abstract: A lead-free solder alloy having a relatively low melting temperature and suitable for use to solder electronic devices consists essentially of: from 7 to 10 wt % of Zn; at least one of from 0.01 to 1 wt % of Ni, from 0.1 to 3.5 wt % of Ag, and from 0.1 to 3 wt % of Cu; optionally at least one of from 0.2 to 6 wt % of Bi, from 0.5 to 3 wt % of In, and from 0.001 to 1 wt % of P; and a balance of Sn. Another such lead-free solder alloy consists essentially of: from 2 to 10 wt % of Zn; from 10 to 30 wt % of Bi; from 0.05 to 2 wt % of Ag; optionally from 0.001 to 1 wt % of P, and a balance of Sn. These solder alloys have a tensile strength of at least 5 kgf/mm2 and at least 10% elongation.

Abstract: A lead-free solder alloy having a relatively low melting temperature and suitable for use to solder electronic devices consists essentially of: from 7 to 10 wt % of Zn; at least one of from 0.01 to 1 wt % of Ni, from 0.1 to 3.5 wt % of Ag, and from 0.1 to 3 wt % of Cu; optionally at least one of from 0.2 to 6 wt % of Bi, from 0.5 to 3 wt % of In, and from 0.001 to 1 wt % of P; and a balance of Sn. Another such lead-free solder alloy consists essentially of: from 2 to 10 wt % of Zn; from 10 to 30 wt % of Bi; from 0.05 to 2 wt % of Ag; optionally from 0.001 to 1 wt % of P, and a balance of Sn. These solder alloys have a tensile strength of at least 5 kgf/mm2 and at least 10% elongation.

Abstract: A lead-free solder alloy having a relatively low melting temperature and suitable for use to solder electronic devices consists essentially of: from 7 to 10 wt % of Zn; at least one of from 0.01 to 1 wt % of Ni, from 0.1 to 3.5 wt % of Ag, and from 0.1 to 3 wt % of Cu; optionally at least one of from 0.2 to 6 wt % of Bi, from 0.5 to 3 wt % of In, and from 0.001 to 1 wt % of P; and a balance of Sn. Another such lead-free solder alloy consists essentially of: from 2 to 10 wt % of Zn; from 10 to 30 wt % of Bi; from 0.05 to 2 wt % of Ag; optionally from 0.001 to 1 wt % of P, and a balance of Sn. These solder alloys have a tensile strength of at least 5 kgf/mm2 and at least 10% elongation.