Abstract: One of the objects of the present invention is to provide a semiconductor measurement apparatus capable of obtaining a measurement result that appropriately reflects the deformation of a pattern even if plural causes for the deformation of the pattern exist together. In order to attain the above object, the semiconductor measurement apparatus is proposed in the following way. The semiconductor measurement apparatus is capable of measuring the dimensions between plural measurement points of different positions of the edge of a reference pattern and plural corresponding points of the circuit pattern of an electronic device, in which the corresponding points correspond to the plural measurement points.

Abstract: Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condition. To this end, a method and a device include a storage unit that stores a model indicating a relationship between a feature amount that is obtained by creating a plurality of outlines from a SEM image and an exposure condition, and outline creation parameter information corresponding to the model; an outline creation unit that creates a plurality of outlines from a SEM image using the outline creation parameter information; and an estimation unit that uses a feature amount that is found based on the plurality of outlines created by the outline creation unit and the model to find an exposure condition.

Abstract: The purpose of the present invention is to provide an overlay error measuring device for correcting a pattern displacement other than an overlay error to thereby achieve high-precision overlay error measurement. To accomplish the abovementioned purpose, the present invention proposes an overlay error measuring device which measures a dimension between a plurality of patterns belonging to different layers using a signal obtained by a charged particle beam device, and when measuring the dimension, corrects an amount corresponding to a pattern shift due to an optical proximity effect and measures the dimension between the plurality of patterns.

Abstract: In a panoramic image construction technology a wide-range imaging area (EP) of semiconductor patterns is divided into a plurality of imaging areas (SEP), and joined a group of images, which are obtained by imaging the SEPs using an SEM, through image processing. Although a pattern serving as a key to joining is not contained in an overlap area between some of the SEPs, all the images can be joined in some cases is noted so that: although the number of patterns serving as keys to joining is small, SEPs whose images are all joined can be determined; or even if such SEPs cannot be determined, SEPs satisfying user's request items as many as possible can be determined. The cases are extracted by optimizing an SEP arrangement, whereby the number of cases in which SEPs whose images are all joined can be determined is increased.

Abstract: An object of the present invention is to provide an image processing apparatus and a computer program which detects a defect such as a scum at high speed and with high precision. In order to accomplish the above-described object, the present invention proposes an image processing apparatus and a computer program which acquires image data, and detects edge branch points from this image data. Here, at each of the edge branch points, an edge associated therewith branches off in at least three or more directions. According to this configuration, it becomes possible to detect a defect such as a scum without utilizing the reference-pattern image. As a consequence, it becomes possible to detect the scum at high speed and with high precision.

Abstract: Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condition. To this end, a method and a device include a storage unit that stores a model indicating a relationship between a feature amount that is obtained by creating a plurality of outlines from a SEM image and an exposure condition, and outline creation parameter information corresponding to the model; an outline creation unit that creates a plurality of outlines from a SEM image using the outline creation parameter information; and an estimation unit that uses a feature amount that is found based on the plurality of outlines created by the outline creation unit and the model to find an exposure condition.

Abstract: The purpose of the present invention is to provide an overlay error measuring device for correcting a pattern displacement other than an overlay error to thereby achieve high-precision overlay error measurement. To accomplish the abovementioned purpose, the present invention proposes an overlay error measuring device which measures a dimension between a plurality of patterns belonging to different layers using a signal obtained by a charged particle beam device, and when measuring the dimension, corrects an amount corresponding to a pattern shift due to an optical proximity effect and measures the dimension between the plurality of patterns.

Abstract: The present invention is intended to provide a contour extraction method and a contour extraction device with an objective of either suppression of unnecessary contouring processings or selective contouring of necessary portions. To attain the objective, provided are a contour extraction method, and a device, with which contours of pattern edges on an image formed based on charged particles emitted from a sample are extracted and, when contouring of a pattern located in an overlapping region provided in connecting images of plural image-capturing regions to form a synthesized image is performed, either areas of the pattern in the plurality of image-capturing regions, or a pre-set measurement portion is found, and selective contour extraction of the pattern with respect to an image of an image-capturing region is carried out either on a side where the area is large, or on a side where a measurement portion regarding the pattern is located.

Abstract: An image of the joint portion of circuit patterns manufactured using a design pattern for double patterning is read out. Target boundary lines and evaluation regions are set on the image. In the evaluation regions, image processing is performed along the directions of the target boundary lines. Furthermore, binarization processing is performed. A decision is made based on an image obtained in this way as to whether the patterns have defects.

Abstract: It is an object of the present invention to provide an image processing device for allowing an actual-image-closer pattern to be formed based on the design data, or its simulation image. In order to accomplish the above-described object, the proposal is made concerning an image processing device which includes an image processing unit which sets the operation condition of a charged-particle beam device on the basis of the design data on a semiconductor element. Here, the image processing device accesses a library for storing device-condition information on the charged-particle beam device, pattern types, and a plurality of combinations of pattern information on each pattern-region basis. Moreover, the image processing device forms a composite image of each pattern region, using the pattern information on each pattern-region basis, and based on the device-condition information and the selection of a pattern type from the pattern types.

Abstract: One of the objects of the present invention is to provide a semiconductor measurement apparatus capable of obtaining a measurement result that appropriately reflects the deformation of a pattern even if plural causes for the deformation of the pattern exist together. In order to attain the above object, the semiconductor measurement apparatus is proposed in the following way. The semiconductor measurement apparatus is capable of measuring the dimensions between plural measurement points of different positions of the edge of a reference pattern and plural corresponding points of the circuit pattern of an electronic device, in which the corresponding points correspond to the plural measurement points.

Abstract: Disclosed is a method wherein a template for template matching is created with high accuracy and high efficiency. With respect to each individual pattern constituting a basic circuit, pattern information regarding a plurality of layers in a semiconductor device is stored in a library. On the basis of the designation of the position and the layer, pattern information regarding the designated position and layer is extracted from the pattern information stored in the library. A template is created on the basis of the extracted pattern information.

Abstract: (1) part or all of the number, coordinates and size/shape and imaging sequence of imaging points each for observation, the imaging position change method and imaging conditions can be calculated automatically from CAD data, (2) a combination of input information and output information for imaging recipe creation can be set arbitrarily, and (3) decision is made of imaging or processing at an arbitrary imaging point as to whether to be successful/unsuccessful and in case a failure is determined, a relief process can be conducted in which the imaging point or imaging sequence is changed.

Abstract: It is the object of the present invention to provide a pattern measurement apparatus which suitably evaluates a pattern formed by a double patterning method prior to a transfer using masks or which suitably evaluates a deviation of patterns formed by the double patterning method. To achieve the object, a pattern measurement apparatus is proposed which performs an exposure simulation on data about contour lines obtained by converting the pattern edges of first and mask images formed based on charged-particle beam irradiation of the two masks used for subsequent double exposure and which overlaps two exposure-simulated contour lines based on the coordinate information of design data about the masks. Furthermore, a pattern dimension measuring apparatus is proposed which sets measurement conditions using a charged-particle beam based on the positional information about parts or portions separated for double exposure.

Abstract: Provided is a panorama image synthesis technique using a scanning charged-particle microscope and capable of obtaining a panorama image synthesis that is robust against contamination and the imaging shift and distortion of an image in a wide-field imaging region (EP) for semiconductor fine patterns. The panorama image synthesis technique in the wide-field imaging region (EP) using the scanning charged-particle microscope is characterized in that the layout of each adjustment point, each local imaging region, and an imaging sequence comprising the imaging order of the each adjustment point are optimized and created as an imaging recipe.

Abstract: (1) part or all of the number, coordinates and size/shape and imaging sequence of imaging points each for observation, the imaging position change method and imaging conditions can be calculated automatically from CAD data, (2) a combination of input information and output information for imaging recipe creation can be set arbitrarily, and (3) decision is made of imaging or processing at an arbitrary imaging point as to whether to be successful/unsuccessful and in case a failure is determined, a relief process can be conducted in which the imaging point or imaging sequence is changed.

Abstract: A pattern inspection apparatus for detecting an abnormality includes a storage, a compensator and an abnormality judger. The storage stores data based on a reference pattern associated with an object pattern as an object to detect an abnormality and including a first pattern edge portion and a second pattern edge portion. The compensator partially compensates a location of the first pattern edge portion to be shrunk or expanded based on the reference pattern such that the first pattern edge portion is to be placed at a location of a third pattern edge portion while the second pattern edge portion maintains the same size. The abnormality judger sets a tolerance based on the location compensated based on the reference pattern, and judges the object pattern as abnormal when an outline of the object pattern is fallen outside of the tolerance.

Abstract: It is an object of the present invention is to provide an image processing technique that can detect the rotation of an observation image of a specimen with high accuracy. An image processing apparatus according to the present invention indirectly corrects a rotation gap between measurement image data and reference image data through wide-angle image data including a measurement part of a specimen (FIG. 1).

Abstract: In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.

Abstract: In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.