Abstract: Imitation lawns are prevented from coming off a laying board 3 due to influence of temperature on an adhesive, secular deterioration of the adhesive, load of an external force exceeding an adhesive strength, load of a strong lateral slide force, and the like. In an artificial lawn including imitation lawns 2, and a laying board 3 onto which the imitation lawns are planted, the imitation lawns 2 each include a bunch of foliaceous pieces 4 and a root portion 5 which bundles the bunch of foliaceous pieces, while the laying board 3 includes a plurality of root portion pots 6 into which the root portions 5 of the imitation lawns 2 are forcibly fit, respectively.

Abstract: The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect).

Abstract: An apparatus of evaluating a layer matching deviation based on CAD information of the invention, is provided with means for storing CAD data and a function of displaying to overlap a scanning microscope image of a pattern of a semiconductor device formed on a wafer and a design CAD image read from the storing means and a function of evaluating acceptability of formation of the pattern by displaying to overlap a pattern image of the semiconductor device formed on the wafer and the design CAD image of the pattern, in addition thereto, a function capable of evaluating acceptability of formation of the pattern also with regard to a shape and positional relationship with a pattern formed at a later step by displaying to overlap a design CAD image of the pattern formed at the later step.

Abstract: An apparatus of evaluating a layer matching deviation based on CAD information of the invention, is provided with means for storing CAD data and a function of displaying to overlap a scanning microscope image of a pattern of a semiconductor device formed on a wafer and a design CAD image read from the storing means and a function of evaluating acceptability of formation of the pattern by displaying to overlap a pattern image of the semiconductor device formed on the wafer and the design CAD image of the pattern, in addition thereto, a function capable of evaluating acceptability of formation of the pattern also with regard to a shape and positional relationship with a pattern formed at a later step by displaying to overlap a design CAD image of the pattern formed at the later step.

Abstract: To provide a wafer inspecting apparatus for classifying by kind defects appearing on a patterned wafer, a wafer is inspected by a wafer defect inspecting apparatus unit and coordinate value data representing positions and sizes of defects on the sample is output thereby. The coordinate value data is supplied to an image data forming unit and graphic images representing defects on the wafer are formed for respective chips on the wafer, and image data is produced. The image data is output to a pattern overlap evaluating unit which analyzes a state of overlap of a first image corresponding to the image data and a second image representing the circuit pattern based on the wiring information and outputting overlap analysis data. A defect kind automatic classifying unit receives the overlap analysis data and classifies defects by kind of defect based on the overlap analysis data.

Abstract: A metrology recipe generator is offered which is capable of automatically creating a metrology recipe without halting the operation of the production line. The metrology recipe is used to carry out SEM-based dimensional metrology for evaluating patterns transferred onto wafers according to CAD data. The generator has a CAD alignment-specifying portion for specifying alignment in CAD according to CAD data and a CAD metrology position-specifying portion for specifying both the coordinates of positions on the wafers on which metrology measurements are made and a metrology type. The metrology recipe is created according to data from the CAD alignment-specifying portion and from the CAD metrology position-specifying portion.

Abstract: An apparatus of evaluating a layer matching deviation based on CAD information of the invention, is provided with means for storing CAD data and a function of displaying to overlap a scanning microscope image of a pattern of a semiconductor device formed on a wafer and a design CAD image read from the storing means and a function of evaluating acceptability of formation of the pattern by displaying to overlap a pattern image of the semiconductor device formed on the wafer and the design CAD image of the pattern, in addition thereto, a function capable of evaluating acceptability of formation of the pattern also with regard to a shape and positional relationship with a pattern formed at a later step by displaying to overlap a design CAD image of the pattern formed at the later step.

Abstract: Low magnification factor pattern image data D1 including the center of the observational position is acquired by adjusting an observation position using a pattern observation device 3 so that the center of observation of prescribed locations of a pattern enter the observational field of view at a low magnification factor. Data D4 for an offset amount caused by errors for the stage 2 is obtained by comparing the edge line segment data D2 based on low magnification factor pattern image data D1 to corresponding CAD line segment data D3. The stage 2 is moved relatively to compensate the offset amount to align the observational field of view of the pattern observation device 3 precisely at the specified pattern portion.

Abstract: In order to check for defects in an electron beam exposure mask M, a mask signal S3 is acquired based on transmission electrons 2Ba acquired by two dimensional scanning of the electron beam exposure mask M by an electron beam scanning device 2, and a CAD signal S4 corresponding to a CAD graphic is acquired, synchronized with output of the mask signal S3 based on CAD data DT for making the electron beam exposure mask M.

Abstract: In order to check for defects in a pattern of an exposure mask, a pattern signal S3 is acquired based on secondary electrons 2Ba acquired by two dimensional scanning of the exposure mask M by an electron beam scanning device 2, and a CAD signal S4 corresponding to a CAD graphic is acquired, and synchronized with output of the pattern signal S3 based on CAD data DT for the pattern of the exposure mask M. Defects in the pattern of the exposure mask M are checked for based on comparison results of the mask signal S3 and the CAD signal S4.

Abstract: Line segment extraction of a subject pattern is carried out based on an SEM image data DBL of a pattern to be subjected to evaluation, so as to obtain SEM line segment data DC. A superimposition displacement distance is then obtained based on CAD line segment data DD corresponding to the subject pattern and SEM line segment data DC, evaluation of a subject pattern is performed in two dimensions, and resulting evaluation value data DE is displayed graphically.

Abstract: An observation position designation section 8 determines a plurality of control points for a wafer pattern formed on a wafer 4 based on CAD data, and generates observation coordinate data D according to the plurality of determined control points, causes a navigation unit 5 to move in accordance with the observation coordinate data D, and automatically and sequentially positions a pattern observation device body 3 on the plurality of observation points for observation.