Patents by Inventor Ryoji Hiroyama
Ryoji Hiroyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210281038Abstract: A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.Type: ApplicationFiled: May 26, 2021Publication date: September 9, 2021Inventors: Keishi KOUNO, Ryoji HIROYAMA, Shinji YOSHIDA, Katsuya SAMONJI, Masanori HIROKI
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Patent number: 8750343Abstract: A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle ?1 (about) 62° with respect to the facet (50a).Type: GrantFiled: September 25, 2008Date of Patent: June 10, 2014Assignee: Future Light, LLCInventors: Ryoji Hiroyama, Yasuto Miyake, Yasumitsu Kuno, Yasuyuki Bessho, Masayuki Hata
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Patent number: 8445303Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.Type: GrantFiled: February 6, 2012Date of Patent: May 21, 2013Assignee: Future Light, LLCInventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
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Publication number: 20120142167Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.Type: ApplicationFiled: February 6, 2012Publication date: June 7, 2012Applicant: Sanyo Electric Co., Ltd.Inventors: Yasuto MIYAKE, Ryoji Hiroyama, Masayuki Hata
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Patent number: 8193016Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.Type: GrantFiled: January 6, 2011Date of Patent: June 5, 2012Assignee: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
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Patent number: 8134171Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.Type: GrantFiled: May 11, 2011Date of Patent: March 13, 2012Assignee: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
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Patent number: 8022427Abstract: A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.Type: GrantFiled: April 24, 2009Date of Patent: September 20, 2011Assignee: Sanyoelectric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata, Yasumitsu Kuno
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Patent number: 8013344Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.Type: GrantFiled: August 5, 2008Date of Patent: September 6, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
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Publication number: 20110211609Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.Type: ApplicationFiled: May 4, 2011Publication date: September 1, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventors: Hiroaki IZU, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20110210365Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.Type: ApplicationFiled: May 11, 2011Publication date: September 1, 2011Applicant: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
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Publication number: 20110200065Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.Type: ApplicationFiled: March 4, 2011Publication date: August 18, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventors: Shingo KAMEYAMA, Yasuhiko NOMURA, Ryoji HIROYAMA, Masayuki HATA
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Patent number: 7978744Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.Type: GrantFiled: September 24, 2008Date of Patent: July 12, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Shingo Kameyama, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
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Patent number: 7961768Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.Type: GrantFiled: October 23, 2008Date of Patent: June 14, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Hiroaki Izu, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20110104839Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.Type: ApplicationFiled: January 6, 2011Publication date: May 5, 2011Applicant: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
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Patent number: 7924898Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.Type: GrantFiled: September 24, 2008Date of Patent: April 12, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Shingo Kameyama, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
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Patent number: 7903709Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.Type: GrantFiled: January 21, 2009Date of Patent: March 8, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
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Patent number: 7892874Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: June 30, 2009Date of Patent: February 22, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Patent number: 7885304Abstract: A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.Type: GrantFiled: March 31, 2009Date of Patent: February 8, 2011Assignee: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata, Yasumitsu Kuno
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Publication number: 20100265981Abstract: A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.Type: ApplicationFiled: December 12, 2008Publication date: October 21, 2010Applicant: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Yasuto Miyake, Yasumitsu Kunoh, Yasuyuki Bessho, Masayuki Hata
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Publication number: 20100246624Abstract: A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle ?1 (about) 62° with respect to the facet (50a).Type: ApplicationFiled: September 25, 2008Publication date: September 30, 2010Applicant: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Yasuto Miyake, Yasumitsu Kuno, Yasuyuki Bessho, Masayuki Hata