Patents by Inventor Ryoji Hiroyama

Ryoji Hiroyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12142895
    Abstract: A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: November 12, 2024
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Keishi Kouno, Ryoji Hiroyama, Shinji Yoshida, Katsuya Samonji, Masanori Hiroki
  • Publication number: 20210281038
    Abstract: A semiconductor laser device includes: a semiconductor laminate body; an insulating layer disposed above the semiconductor laminate body and including a first opening extending in a first direction that is a direction from a front end surface toward a rear end surface; a first electrode disposed above the semiconductor laminate body; a second electrode disposed above the first electrode and the insulating layer; and an adhesion layer disposed between the second electrode and the insulating layer. The adhesion layer includes a second opening that at least partially overlaps with the first opening in plan view, the first electrode is at least partially disposed inside the first opening and the second opening, and the second electrode and the adhesion layer are disposed above the insulating layer between the first opening and at least one of the front end surface or the rear end surface.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 9, 2021
    Inventors: Keishi KOUNO, Ryoji HIROYAMA, Shinji YOSHIDA, Katsuya SAMONJI, Masanori HIROKI
  • Patent number: 8750343
    Abstract: A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle ?1 (about) 62° with respect to the facet (50a).
    Type: Grant
    Filed: September 25, 2008
    Date of Patent: June 10, 2014
    Assignee: Future Light, LLC
    Inventors: Ryoji Hiroyama, Yasuto Miyake, Yasumitsu Kuno, Yasuyuki Bessho, Masayuki Hata
  • Patent number: 8445303
    Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: May 21, 2013
    Assignee: Future Light, LLC
    Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
  • Publication number: 20120142167
    Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
    Type: Application
    Filed: February 6, 2012
    Publication date: June 7, 2012
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Yasuto MIYAKE, Ryoji Hiroyama, Masayuki Hata
  • Patent number: 8193016
    Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: June 5, 2012
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
  • Patent number: 8134171
    Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: March 13, 2012
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
  • Patent number: 8022427
    Abstract: A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: September 20, 2011
    Assignee: Sanyoelectric Co., Ltd.
    Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata, Yasumitsu Kuno
  • Patent number: 8013344
    Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
    Type: Grant
    Filed: August 5, 2008
    Date of Patent: September 6, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
  • Publication number: 20110211609
    Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
    Type: Application
    Filed: May 4, 2011
    Publication date: September 1, 2011
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Hiroaki IZU, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
  • Publication number: 20110210365
    Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
    Type: Application
    Filed: May 11, 2011
    Publication date: September 1, 2011
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
  • Publication number: 20110200065
    Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
    Type: Application
    Filed: March 4, 2011
    Publication date: August 18, 2011
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Shingo KAMEYAMA, Yasuhiko NOMURA, Ryoji HIROYAMA, Masayuki HATA
  • Patent number: 7978744
    Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
    Type: Grant
    Filed: September 24, 2008
    Date of Patent: July 12, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Shingo Kameyama, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
  • Patent number: 7961768
    Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: June 14, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hiroaki Izu, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
  • Publication number: 20110104839
    Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
    Type: Application
    Filed: January 6, 2011
    Publication date: May 5, 2011
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
  • Patent number: 7924898
    Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
    Type: Grant
    Filed: September 24, 2008
    Date of Patent: April 12, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Shingo Kameyama, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
  • Patent number: 7903709
    Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: March 8, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
  • Patent number: 7892874
    Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: February 22, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
  • Patent number: 7885304
    Abstract: A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: February 8, 2011
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata, Yasumitsu Kuno
  • Publication number: 20100265981
    Abstract: A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.
    Type: Application
    Filed: December 12, 2008
    Publication date: October 21, 2010
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Ryoji Hiroyama, Yasuto Miyake, Yasumitsu Kunoh, Yasuyuki Bessho, Masayuki Hata