Patents by Inventor Ryoji Hiroyama
Ryoji Hiroyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7796669Abstract: A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.Type: GrantFiled: September 22, 2006Date of Patent: September 14, 2010Assignee: Sanyo Electronic Co., Ltd.Inventors: Ryoji Hiroyama, Teruaki Miyake, Yuzuru Miyata
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Publication number: 20090323750Abstract: A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.Type: ApplicationFiled: June 26, 2009Publication date: December 31, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Daijiro Inoue, Kiyoshi Oota, Yoshiki Murayama, Ryoji Hiroyama, Hiroki Ohbo, Seiichi Tokunaga
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Publication number: 20090267100Abstract: A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.Type: ApplicationFiled: April 24, 2009Publication date: October 29, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata, Yasumitsu Kuno
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Publication number: 20090263925Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: ApplicationFiled: June 30, 2009Publication date: October 22, 2009Applicant: SANYO ELECTRIC CO., LTDInventors: Tatsuya KUNISATO, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20090245310Abstract: A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.Type: ApplicationFiled: March 31, 2009Publication date: October 1, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata, Yasumitsu Kuno
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Patent number: 7592630Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: February 2, 2005Date of Patent: September 22, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20090185594Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.Type: ApplicationFiled: January 21, 2009Publication date: July 23, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Daijiro Inoue, Yasuyuki Bessho, Masayuki Hata
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Publication number: 20090086783Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.Type: ApplicationFiled: September 24, 2008Publication date: April 2, 2009Applicant: SANYO ELECTRIC CO., LTD.Inventors: Shingo KAMEYAMA, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
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Publication number: 20090086778Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.Type: ApplicationFiled: September 24, 2008Publication date: April 2, 2009Applicant: SANYO ELECTRIC CO., LTDInventors: Shingo KAMEYAMA, Yasuhiko Nomura, Ryoji Hiroyama, Masayuki Hata
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Patent number: 7512167Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.Type: GrantFiled: September 7, 2005Date of Patent: March 31, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Hiroaki Izu, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20090046755Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.Type: ApplicationFiled: October 23, 2008Publication date: February 19, 2009Applicant: SANYO ELECTRIC CO., LTD.Inventors: Hiroaki IZU, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20090039473Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.Type: ApplicationFiled: August 5, 2008Publication date: February 12, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Yasuto Miyake, Ryoji Hiroyama, Masayuki Hata
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Patent number: 7488613Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: GrantFiled: October 16, 2007Date of Patent: February 10, 2009Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20090028204Abstract: A semiconductor laser device includes a substrate made of a nitride-based semiconductor and a waveguide formed on a principal surface of the substrate, wherein the substrate includes a dislocation concentrated region arranged so as to obliquely extend with respect to the principal surface of the substrate, and the waveguide is so formed as to be located above the dislocation concentrated region and also located on a region except a portion where the dislocation concentrated region is present in the principal surface of the substrate.Type: ApplicationFiled: July 24, 2008Publication date: January 29, 2009Applicant: Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Yasuhiko Nomura, Masayuki Hata, Yasuto Miyake
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Publication number: 20080064130Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.Type: ApplicationFiled: October 16, 2007Publication date: March 13, 2008Applicant: SANYO ELECTRIC CO., LTD.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20070274359Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.Type: ApplicationFiled: July 24, 2007Publication date: November 29, 2007Applicant: SANYO ELECTRIC CO., LTD.Inventors: Kunio Takeuchi, Ryoji Hiroyama, Daijiro Inoue, Shigeyuki Okamoto, Noriaki Matsuoka, Shingo Kameyama, Kiyoshi Oota
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Patent number: 7260130Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.Type: GrantFiled: March 29, 2004Date of Patent: August 21, 2007Assignee: Sanyo Electric Co., Ltd.Inventors: Kunio Takeuchi, Ryoji Hiroyama, Daijiro Inoue, Shigeyuki Okamoto, Noriaki Matsuoka, Shingo Kameyama, Kiyoshi Oota
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Publication number: 20070069221Abstract: A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.Type: ApplicationFiled: September 22, 2006Publication date: March 29, 2007Applicants: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Ryoji Hiroyama, Teruaki Miyake, Yuzuru Miyata
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Patent number: 7154123Abstract: A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.Type: GrantFiled: February 18, 2005Date of Patent: December 26, 2006Assignee: Sanyo Electric Co., Ltd.Inventors: Tatsuya Kunisato, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota
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Publication number: 20060078020Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.Type: ApplicationFiled: September 7, 2005Publication date: April 13, 2006Inventors: Hiroaki Izu, Tsutomu Yamaguchi, Hiroki Ohbo, Ryoji Hiroyama, Masayuki Hata, Kiyoshi Oota