Abstract: A surface emission semiconductor laser device capable of substantially completely controlling the plane of polarization is obtained. This surface emission semiconductor laser device comprises a first multi-layer reflector, an emission layer formed on the first multi-layer reflector and a second multi-layer reflector formed on the emission layer, and at least either the first multi-layer reflector or the second multi-layer reflector includes a striped part worked in a striped manner in a prescribed period.

Abstract: A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.

Abstract: A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

Abstract: A pre-curing viscous solution (precursor solution) is applied to the back surface of a substrate for forming an optically transparent layer principally composed of an inorganic material. The substrate is heated or irradiated with UV light while being pressed with unevenness of a mold. By removing the substrate from the mold, the optically transparent, inorganic material layer principally composed of the inorganic material is formed on the substrate. In this manner, the inorganic material layer with the unevenness is formed on the back surface of the substrate (a light extraction surface) by embossing.

Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

Abstract: A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

Abstract: A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

Abstract: A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

Abstract: An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

Abstract: A surface emission semiconductor laser device capable of substantially completely controlling the plane of polarization is obtained. This surface emission semiconductor laser device comprises a first multi-layer reflector, an emission layer formed on the first multi-layer reflector and a second multi-layer reflector formed on the emission layer, and at least either the first multi-layer reflector or the second multi-layer reflector includes a striped part worked in a striped manner in a prescribed period.

Abstract: A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

Abstract: A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

Abstract: An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

Abstract: A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

Abstract: A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

Abstract: A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

Abstract: A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a <011> direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

Abstract: The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.

Abstract: On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.