Abstract: A solid-state image sensor comprises unit pixels each having a photoelectric conversion element for converting incident light into electric signal charge and then storing the signal charge obtained through such photoelectric conversion, an amplifying element for converting into an electric signal the signal charge stored in the photoelectric conversion element, and a select switch for selectively outputting the pixel signal from the amplifying element to a signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the photoelectric conversion element every time a pixel signal is outputted from the relevant unit pixel.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a loating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: An arithmetic circuit, which is retained by each pixel in a conventional image sensor, is shared by each column. Signal processing circuits of different configurations are provided on signal transmission paths in an upward direction and a downward direction of a vertical signal line for extracting an image signal from each pixel, whereby image output processing and arithmetic processing are performed completely separately by the different circuit blocks. Thus, image quality of an actual image is improved and optimum design for arithmetic processing is made possible. Specifically, an I-V converter circuit unit, a CDS circuit unit and the like are provided on the image output side. A current mirror circuit unit, an analog memory array unit, a comparator unit, a bias circuit unit, a data latch unit, an output data bus unit and the like are provided on the arithmetic processing side.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ? Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: According to a solid-state image pickup device and a driving method thereof in which unit pixels, each comprising a photodiode, a selection MOS transistor and a read-out MOS transistor, are two-dimensionally disposed in a matrix form, and each vertical signal line is connected to a column amplifier. The vertical signal line is first reset by a reset MOS transistor, and then a pixel signal is read out from the photodiode to the vertical signal line to successively output the reset level and the signal level to a horizontal signal line through the same route (the column amplifier, the horizontal selection MOS transistor, etc.), and then the difference between the reset level and the signal level is calculated by a CDS circuit.

Abstract: An amplifying type solid-state image sensor comprises, in each of unit pixels arrayed to form a matrix of rows and columns, a photoelectric conversion element, an amplifying element having a storage to store a signal charge transferred thereto from the photoelectric conversion element and serving to convert the signal charge of the storage into an electric signal, and a selector switch for selectively outputting the pixel signal from the amplifying element to a vertical signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the storage of each amplifying element every time a pixel signal is outputted from the pixel. A pre-reset signal and a post-reset signal are delivered from each unit pixel and then are transferred via a common path, and the difference between such signals is taken to suppress not only the fixed pattern noise derived from characteristic deviation in each unit pixel but also vertically correlated fixed pattern noises of vertical streaks.

Abstract: A solid-state image pickup device including a matrix of unit pixels, each unit pixel including five transistors, a plurality of horizontal signal lines wired on a row-by-row basis and a vertical signal line commonly wired for the plurality of the horizontal signal lines. A reset transistor resets a floating diffusion region FD, and the reset level of the reset transistor is output to the horizontal signal lines through an amplifying transistor. In succession, a signal charge of a photodiode is read out into the floating diffusion region FD through a read out transistor, and the signal level based on the signal charge is output to the horizontal signal lines through the amplifying transistor.

Abstract: A solid-state image pickup device 20 according to the present invention includes a plurality of light-receiving sensor portions 2 arrayed in the horizontal and vertical directions and interconnection layers of a plurality of layers formed through interlayer insulators so as to form opening portions 423 at their portions corresponding to the respective light-receiving sensor portions 2, wherein the opening portions 423 of the uppermost layer of the interconnection layer are shifted from the light-receiving sensor portions 2 toward the center of the image pickup area in any one direction of the horizontal direction or the vertical directions. Thus, it is possible to provide a solid-state image pickup device and an image pickup camera including this solid-state image pickup device capable of restraining shading while interconnection and layout of interconnection layers are being facilitated.

Abstract: The present invention relates to a flue gas treatment method and apparatus for removing sulfur oxides by injecting ammonia into flue gas containing sulfur oxides. In the flue gas treatment method for removing sulfur oxides contained in the flue gas using ammonia, the present invention is characterized in that ammonia is injected into the flue gas containing sulfur oxides to react sulfur oxides with ammonia to produce ammonium compounds containing ammonium sulfate, and after recovering the produced ammonium compounds from the flue gas, the flue gas is brought into contact with an absorption liquid to remove residual sulfur oxides and/or ammonia contained in the flue gas.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse &PHgr;Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: There has been a case where during the changing of a speed such that the continuation time is reduced or extended, the output timing of a video signal and the output timing of an audio signal can largely deviate from each other in comparison with the case of normal reproduction, and that the synchronization can not be maintained.

Abstract: A solid-state image sensor comprises unit pixels each having a photoelectric conversion element for converting incident light into electric signal charge and then storing the signal charge obtained through such photoelectric conversion, an amplifying element for converting into an electric signal the signal charge stored in the photoelectric conversion element, and a select switch for selectively outputting the pixel signal from the amplifying element to a signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the photoelectric conversion element every time a pixel signal is outputted from the relevant unit pixel.

Abstract: A solid-state image sensor comprises unit pixels each having a photoelectric conversion element for converting incident light into electric signal charge and then storing the signal charge obtained through such photoelectric conversion, an amplifying element for converting into an electric signal the signal charge stored in the photoelectric conversion element, and a select switch for selectively outputting the pixel signal from the amplifying element to a signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the photoelectric conversion element every time a pixel signal is outputted from the relevant unit pixel.

Abstract: A photodiode and a FD portion are arranged in parallel with a transfer gate portion interposed therebetween, and a transfer electrode is arranged above the transfer gate portion. The transfer electrode has a body portion and an expanded portion and is expanded in the gate lengthwise direction. Where the partial expanded portion is provided on the transfer electrode in this manner, the modulation degree of the transfer electrode can be increased while the amount of reduction of the area of a light reception portion of the photodiode is reduced (the numerical aperture is increased). As a result, a solid-state image pickup device with which transfer residual is less likely to occur and which is suitable for complete transfer can be configured.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: The invention relates to a color solid-state pickup element and a method for producing the same, which can improve the sensitivity by efficiently utilizing light received by the element surface and has an excellent color reappearance property, wherein, in a solid-state pickup element having light receptive elements arrayed and formed on the surface side of a substrate, a light polarizing prism that polarizes light he that has entered from the surface side of the substrate, distributes and irradiates spectral light ha of specified wavelength bands onto a plurality of light receptive areas is provided on the substrate in which the light receptive areas are arrayed and formed; the second light condensing lens that condenses light he irradiated on the surface side of the substrate is provided on the light polarizing prism; an in-layer lens that makes the light hc condensed by the second light condensing lens into a parallel beam hb and causes it to enter the light polarizing prism is provided between the second l

Abstract: Each unit pixel includes a photodiode, a reading selection transistor, a reading transistor, an amplifying transistor, a reset transistor, and a horizontal selection transistor, and thus a MOS image sensor of a dot-sequential reading 5-Tr type is formed. The reading selection transistor and the reading transistor are formed with a two-layer gate structure, and gate potential of the reading selection transistor and the reading transistor is set to a negative potential. Thereby, a lower layer of a gate region of the reading transistor and the reading selection transistor is controlled to a negative potential. Thus, depletion in the lower layer region is suppressed to reduce leakage current.