Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.

Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

Abstract: A solid-state imaging device includes an imaging region having a plurality of pixels arranged. Each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal. Further each pixel includes a first gate portion for charge accumulation and a second gate portion for charge readout that are formed between the photoelectric converting portion and a floating diffusion portion.

Abstract: A solid-state imaging device includes: a pixel array unit wherein a unit pixel group with a portion of elements of a unit pixel being shared with a plurality of unit pixels is arrayed in a matrix form, the unit pixel having a detecting unit, a pixel signal generating unit, a transfer unit to transfer the charge, and an initializing unit to initialize the potential of the pixel signal generating unit; and a driving control unit; wherein the driving control unit controls blooming reduction potential which is the transfer control potential supplied to the transfer unit of the unit pixel to be thinned, so that the overflow charge at the detecting unit with the unit pixel to be thinned which has no shared relation with the unit pixel to be read transitions to a state readily transferable to the pixel signal generating unit side of the unit pixel to be thinned.

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract: A digital data processor which receives an N-bit input signal from a data source and converts the N-bit input signal into an M-bit output signal, the M-bit being larger than the N-bit. The digital data processor includes: an weighted addition circuit which is operable to perform weighted addition on at least the input signal and a signal being time-shifted with respect to the input signal and output as a weighted added input signal; an arithmetic shift circuit which is operable to perform an arithmetic rightward shift operation on the weighted added input signal for a predetermined number of shifts and output as a processed input signal; a bit extension circuit which is operable to attach a predetermined bits to an LSD side of the input signal to generate an intermediate signal of M bits; and an addition circuit which is operable to perform addition of the intermediate signal and the processed input signal so as to generate the M-bit output signal.

Abstract: An image reproducing device includes: an image signal inputting part for receiving input of a first image signal; a sub image signal generating part for generating a sub image signal from information on a sub image extracted from said first image signal; a main image signal decoding part for extracting a main image signal from said first image signal and decoding said main image signal; a brightness detecting part for detecting a brightness of said main image signal and calculating a brightness average value; a brightness adjusting part for adjusting a brightness of said sub image signal based on said brightness average value; an image signal composing part for composing said main image signal and said sub image signal, the brightness of which is adjusted, and generating a second image signal; and an image signal outputting part for outputting said second image signal.

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract: An audio mixing device that can get simpler processing done safely without depending on the property of an input signal is provided.

Abstract: A visual acuity testing apparatus capable of performing visual acuity testing under substantially uniform conditions even when a test distance and an installation distance vary has a projection optical unit including a disk whereon a chart is placed, an illumination light source, and variable projection lenses which are moved so as to change an image-forming position and an image size of an image of the chart, an input unit into which an installation distance between the screen and the visual acuity testing apparatus and a test distance between the screen and an examinee are inputted, a projection lens driving unit which moves the variable projection lenses based on the installation distance and the test distance, and a light intensity adjusting unit which adjusts light intensity based on the installation distance and the test distance so that brightness of the chart image falls within a predetermined reference range.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: A solid-state image sensor comprises unit pixels each having a photoelectric conversion element for converting incident light into electric signal charge and then storing the signal charge obtained through such photoelectric conversion, an amplifying element for converting into an electric signal the signal charge stored in the photoelectric conversion element, and a select switch for selectively outputting the pixel signal from the amplifying element to a signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the photoelectric conversion element every time a pixel signal is outputted from the relevant unit pixel.

Abstract: A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: The present invention provides an information embedding apparatus that is capable of preventing playback stop of a content that has been shot without intention of misuse. The information embedding apparatus comprises: an acquisition unit operable to acquire the content that is played back along the playback time-line; a watermark generating unit operable to generate the watermarks such that values held by the watermarks vary according to a first rule, the first rule showing that the values should vary according to a sequential order on the playback time-line; and an embedding unit operable to embed two or more of the watermarks into the content while keeping the sequential order.

Abstract: Each unit pixel includes a photodiode, a reading selection transistor, a reading transistor, an amplifying transistor, a reset transistor, and a horizontal selection transistor, and thus a MOS image sensor of a dot-sequential reading 5-Tr type is formed. The reading selection transistor and the reading transistor are formed with a two-layer gate structure, and gate potential of the reading selection transistor and the reading transistor is set to a negative potential. Thereby, a lower layer of a gate region of the reading transistor and the reading selection transistor is controlled to a negative potential. Thus, depletion in the lower layer region is suppressed to reduce leakage current.

Abstract: A solid-state image sensor comprises unit pixels each having a photoelectric conversion element for converting incident light into electric signal charge and then storing the signal charge obtained through such photoelectric conversion, an amplifying element for converting into an electric signal the signal charge stored in the photoelectric conversion element, and a select switch for selectively outputting the pixel signal from the amplifying element to a signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the photoelectric conversion element every time a pixel signal is outputted from the relevant unit pixel.

Abstract: This audio output device can output audio signals with mutually different numbers of channels through multiple audio output sections on a channel-by-channel basis. The device has a first audio output mode for outputting a first audio signal with a first number of channels through the audio output sections and a second audio output mode for outputting second and third audio signals with second and third numbers of channels, respectively, which are both smaller than the first number, through the audio output sections simultaneously. The audio output sections for use to output the second and third audio signals in the second audio mode are used in the first audio mode to output the first audio signal.