Abstract: There is provided hollow resin particles used in a resin composition for semiconductor members, which can be used in a resin composition for semiconductor members to provide a semiconductor member capable of exerting excellent low dielectric properties. The hollow resin particles used in a resin composition for semiconductor members according to an embodiment of the present invention are hollow resin particles having a hole part inside the particle, wherein a decreasing rate of a relative dielectric constant Dk1 of a film (F1) formulated with 80 parts by weight of polyimide and 20 parts by weight of the hollow resin particles to a relative dielectric constant Dk0 of a film (F0) formed with only the polyimide is 3% or more.

Abstract: The present invention relates to an organoruthenium compound raw material for a chemical deposition method. An organoruthenium compound is represented by the following Formula 1 in which a trimethylenemethane-based ligand (L1), and two carbonyl ligands and a ligand X coordinate to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand (L1) is represented by the following Formula 2. Besides, the ligand X is any one of an isocyanide ligand, a pyridine ligand, an amine ligand, an imidazole ligand, a pyridazine ligand, a pyrimidine ligand, and a pyrazine ligand. wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: A tool diagnosis system includes a machining device to machine a workpiece, an imaging device to capture an image of a blade of a tool attached to the machining device, an image processor to process an image of the blade, a model generator to generate a trained model through machine learning to learn a remaining service life of the tool using, as training data, a processed image of the blade, a machining condition, and specifications of the tool and the workpiece, and an inferrer to input a processed image of the blade, a machining condition, and specifications of the tool and the workpiece into the trained model to output the remaining service life. The image processor compares an image of the blade captured subsequent to machining with an image of the blade captured after the tool is rotated after the image capturing subsequent to machining, and identifies a wear scar.

Abstract: A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.

Abstract: A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.

Abstract: Hollow polymer particles comprising a polymer containing a vinylic monomer unit and a phosphate ester monomer unit, the hollow polymer particles having a volume average particle diameter of 0.5 to 1000 ?m.

Abstract: The present invention provides vinyl-based resin particles capable of easily smoothing the surface of a thermosetting resin film when the particles are used as a pore-forming material for a thermosetting resin. Specifically, the present invention provides vinyl-based resin particles for use in making a thermosetting resin porous, the particles having a temperature of 230° C. or higher and lower than 300° C. at 10% mass loss when heated at a rate of 10° C./min in an air atmosphere, and the particles having a mass loss percentage of 85 to 100% after being heated at 350° C. for 5 hours in an air atmosphere.

Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: There is provided hollow resin particles used in a resin composition for semiconductor members, which can be used in a resin composition for semiconductor members to provide a semiconductor member capable of exerting excellent low dielectric properties. The hollow resin particles used in a resin composition for semiconductor members according to an embodiment of the present invention are hollow resin particles having a hole part inside the particle, wherein a decreasing rate of a relative dielectric constant Dk1 of a film (F1) formulated with 80 parts by weight of polyimide and 20 parts by weight of the hollow resin particles to a relative dielectric constant Dk0 of a film (F0) formed with only the polyimide is 3% or more.

Abstract: Silica-including microcapsule resin particles including an outer shell constituted of a crosslinked polymer and a cavity partitioned with the outer shell, in which the silica-including microcapsule resin particles contain inside the cavity a porous structure in which silica particles are mutually connected, and have a volume average particle diameter of 0.5 to 100 ?m.

Abstract: The present invention relates to an organoruthenium compound raw material for a chemical deposition method. An organoruthenium compound is represented by the following Formula 1 in which a trimethylenemethane-based ligand (L1), and two carbonyl ligands and a ligand X coordinate to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand (L1) is represented by the following Formula 2. Besides, the ligand X is any one of an isocyanide ligand, a pyridine ligand, an amine ligand, an imidazole ligand, a pyridazine ligand, a pyrimidine ligand, and a pyrazine ligand. wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

Abstract: The present invention provides a composite that has good initial adhesion and good adhesion after high temperature and high humidity aging. Provided is a composite including: a topping rubber composition having a fatty acid content of 0.8% by mass or less; and an adherend plated with a copper-containing layer.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.

Abstract: Fluorescent resin particles which comprise a water-soluble fluorescent dye and a polymer made from a monomer mixture.

Abstract: Spherical polyester-based resin particles characterized in that the spherical polyester-based resin particles contain a polyester-based resin and have a crystallinity of 20% or less and an average circularity of 0.96 or more. The spherical polyester-based resin particles according to the present invention can provide suitable resin particles as compounding agents for cosmetics such as foundation, antiperspirants, and skin scrubs; various agents such as matte coating agents for paints, rheology modifying agents, antiblocking agents, slipperiness-imparting agents, light diffusion agents, electroconductive agents, and diagnostic testing agents for medical use; and additives to molded articles such as automobile materials and construction materials.

Abstract: Hollow polymer particles comprising a polymer containing a vinylic monomer unit and a phosphate ester monomer unit, the hollow polymer particles having a volume average particle diameter of 0.5 to 1000 ?m.

Abstract: The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands L1 and L2 coordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. wherein R1 to R12, which are substituents of the ligands L1 and L2, are each independently any one of a hydrogen atom, and a linear or branched alkyl group having a carbon number of 1 or more and 4 or less.

Abstract: The present invention provides vinyl-based resin particles capable of easily smoothing the surface of a thermosetting resin film when the particles are used as a pore-forming material for a thermosetting resin. Specifically, the present invention provides vinyl-based resin particles for use in making a thermosetting resin porous, the particles having a temperature of 230° C. or higher and lower than 300° C. at 10% mass loss when heated at a rate of 10° C./min in an air atmosphere, and the particles having a mass loss percentage of 85 to 100% after being heated at 350° C. for 5 hours in an air atmosphere.