Abstract: The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents R1 to R4 on the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions R5 and R6 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature.

Abstract: The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, including an organoruthenium compound in which two diazadiene ligands and two alkyl ligands are coordinated to ruthenium, the organoruthenium being represented by the following formula. The organoruthenium compound to be applied in the present invention can be used for low-temperature deposition, and capable of forming a ruthenium thin film or a ruthenium compound thin film without use of an oxygen gas.

Abstract: The present invention relates to a raw material for a cyclometalated iridium complex, and provides a technique that makes it possible to obtain a cyclometalated iridium complex in higher yield at a lower reaction temperature than using tris(2,4-pentanedionato)iridium(III). The present invention relates to a raw material for a cyclometalated iridium complex, including an organic iridium material for producing a cyclometalated iridium complex, the organic iridium material being a tris(?-diketonato)iridium(III), in which an asymmetric ?-diketone is coordinated to iridium.

Abstract: Polyester-based resin particles including a polyester-based resin as a base resin, in which the base resin exhibits a plurality of endothermic peaks corresponding to crystal melting temperatures by DSC measurement, at least one of the endothermic peaks exists in each region of a low temperature side region and a high temperature side region, a maximum endothermic peak of the low temperature side region and a maximum endothermic peak of the high temperature side region exhibit a crystal melting heat amount ratio (low temperature side crystal melting heat amount/high temperature side crystal melting heat amount) in a range of 0.1 to 1.5, and the polyester-based resin particles have a volume average particle diameter of 1 to 50 ?m.

Abstract: The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.

Abstract: Spacer particles for a resin composition layer have a compressive strength at 10% compressive deformation (10% compressive strength) at room temperature (rt) of 0.05 to 10 MPa, have a rate of change in 10% compressive strength-by a temperature change from rt to 50° C. of 5% or less or have a rate of change in 10% compressive strength by a temperature change from ?20° C. to rt of 30% or less, and have a volume average particle diameter of 2 to 200 ?m and a coefficient of variation in particle diameter of 15% or less.

Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (Mi) and the second transition metal (M2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which as ligands, at least a diimine and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, and the chemical deposition raw material is represented by the following formula. In the formula, the first transition metal (M1) and the second transition metal (M2) are mutually different. The number of diimines (L) is 1 or more and 2 or less, and to the diimine is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R4. With the present chemical deposition raw material, a composite metal thin film or a composite metal compound thin film containing a plurality of metals can be formed from a single raw material.

Abstract: The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents R1 to R4 on the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions R5 and R6 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature.

Abstract: The present invention relates to a raw material for chemical deposition in a formula shown below and including an organoplatinum compound in which an alkenyl amine and an alkyl anion are coordinated to divalent platinum. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure enough to make possible the manufacturing of a platinum thin film at low temperature and also has moderate thermal stability.

Abstract: A process for producing resin particles includes a step in which a polymerizable mixture including a polymerizable monomer including at least one of a styrene-based monomer and a (meth)acrylic-based monomer, and a polymerization initiator is absorbed into seed particles in an aqueous medium, without using a dispersant, in the presence of an anionic surfactant not having a polyoxyethylene chain but having an alkyl group; and a step in which the polymerizable monomer is polymerized in an aqueous medium, without using a dispersant, in the presence of an anionic surfactant having a polyoxyethylene chain to thereby obtain resin particles. The resin particles include a resin derived from a polymerizable monomer including at least one of a styrene-based monomer and a (meth)acrylic-based monomer. The proportion by number of particles having a particle diameter in the range of from 80 to 120% of the volume-average particle diameter is 85% or more.

Abstract: A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R1 to R5 which are substituent groups of the cyclopentadienyl group represent CnH2n+1 and n represents an integer of 0 to 6).

Abstract: A high-recoverability resin particles having a mean particle size of 1 to 100 ?m containing a crossdinked (meth)acrylic acid ester-based resin, wherein the high-recoverability resin particles have a recovery rate of 22% or greater, and a 30% compression strength of 1.5 to 5.0 kgf/mm2.

Abstract: A method for manufacturing tris(?-diketonato)iridium by reacting ?-diketone with an iridium compound, in which an activation treatment including (a) an alkali treatment and (b) an acid treatment described below is applied to the iridium compound to activate the iridium compound, and to subsequently react the ?-diketone, (a) an alkali treatment: a treatment of adding alkali to a solution of the iridium compound to raise pH of the solution to a more alkaline side than that before the alkali addition and to not less than 10, and (b) an acid treatment: a treatment of adding acid to the solution subjected to the alkali treatment to lower pH of the solution to a more acidic side than that before the acid addition and to make the pH difference between solutions before and after the acid addition be not less than 0.1 and not more than 10. The present invention allows manufacture of tris(?-diketonato)iridium utilizing a wide variety of ?-diketones.

Abstract: The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: wherein the substituents R1 to R12 are each independently a hydrogen atom, a linear or cyclic hydrocarbon, an amine, an imine, an ether, a ketone, or an ester, and the substituents R1 to R12 each have 6 or less carbon atoms.

Abstract: The present invention provides a raw material, formed of a ruthenium complex, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, wherein the ruthenium complex is a ruthenium complex represented by the following formula, in which carbonyl groups and a fluoroalkyl derivative of a polyene are coordinated to ruthenium.

Abstract: Porous resin particles are disclosed that comprise a polymer of a monomer mixture. The monomer mixture includes: a mono(meth)acrylate-based monomer in an amount of 3 wt % to 40 wt % containing: an ethylenic unsaturated group only in a (meth)acrylic acid residue; and a hydroxyl group and at least either an ether group or an ester group in an alcohol residue; another monofunctional vinyl-based monomer in an amount of 10 wt % to 69 wt % containing a single ethylenic unsaturated group; and a polyfunctional vinyl-based monomer in an amount of 30 wt % to 70 wt % containing two or more ethylenic unsaturated groups.

Abstract: The invention provides non-spherical resin particles with a novel shape capable of improving light diffusion, adhesion, oil absorption, and other properties, as well as a manufacturing method and use of the particles. Each non-spherical resin particle includes a concave portion and a convex portion formed in the concave portion, wherein the convex portion has a quasi-spherical surface. The method of manufacturing non-spherical resin particles involves a step of polymerizing 100 parts by weight of a first monomer mixture containing 77 to 99.99 parts by weight of a branched alkyl methacrylate, 0.01 to 3 parts by weight of a polyfunctional monomer, and 0 to 20 parts by weight of a monofunctional (meth)acrylate which is not a branched alkyl methacrylate, in the presence of 0.1 to 0.9 parts by weight of a chain transfer agent and 0 to 100 parts by weight of a (meth)acrylate polymer, to obtain resin particles.

Abstract: The present invention relates to a raw material for a cyclometalated iridium complex, and provides a technique that makes it possible to obtain a cyclometalated iridium complex in higher yield at a lower reaction temperature than using tris(2,4-pentanedionato)iridium(III). The present invention relates to a raw material for a cyclometalated iridium complex, including an organic iridium material for producing a cyclometalated iridium complex, the organic iridium material being a tris(?-diketonato)iridium(III), in which an asymmetric ?-diketone is coordinated to iridium.

Abstract: The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. This raw material has a low melting point, proper heat stability and film-formation ability at low temperature. Further, due to a high vapor pressure, the raw material is suitable for a three-dimensional electrode material having a three-dimensional structure.