Abstract: Provided is a communication control method of controlling communication between a first electrical switch and a second electrical switch each connected via an optical network and via an electrical network and each responsible for one or more devices to enable a data transfer with high reliability and low latency. The communication control method includes processes of (A) determining the presence or absence of blocking in relation to a first setup request of an optical circuit from the first electrical switch to the second electrical switch and (B) performing, if the blocking is present, at least one process of a first process of transmitting, from the first electrical switch, a second setup request of the optical circuit from the first electrical switch to the second electrical switch and a second process of transmitting a packet or a packet flow related to the first setup request from the first electrical switch via the electrical network.

Abstract: A semiconductor element including: an element substrate provided with an element region at a middle part and a peripheral region outside the element region; and a readout circuit substrate facing the element substrate, in which the element substrate includes a first semiconductor layer provided in the element region and including a compound semiconductor material, a wiring layer provided between the first semiconductor layer and the readout circuit substrate, the wiring layer electrically coupling the first semiconductor layer and the readout circuit substrate to each other, a first passivation film provided between the wiring layer and the first semiconductor layer, and a second passivation film opposed to the first passivation film with the first semiconductor layer interposed therebetween, and in which the peripheral region of the element substrate includes a bonded surface with respect to the readout circuit substrate.

Abstract: A stator for a rotating electric machine includes a stator core and a stator coil. The stator core is formed of a band-shaped steel sheet that is helically bent and laminated. The stator core has slots each opening at an inner periphery of the stator core and spaced from one another in a circumferential direction. The stator coil is formed of electrical conductor segments that are inserted in the slots of the stator core and connected with one another. The band-shaped steel sheet has slits each of which is formed, at a position corresponding to one of the slots, to be open to the corresponding slot. Each of the electrical conductor segments is substantially U-shaped and has a pair of leg portions respectively inserted in corresponding two of the slots of the stator core; the corresponding two slots are circumferentially apart from each other by two or more slot-pitches.

Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

Abstract: There is provide a photoelectric conversion element and an imaging device, in which image quality is capable of being improved. The photoelectric conversion element includes: a photoelectric conversion layer including a compound semiconductor material; a mesa portion disposed on a part of an upper surface side of the photoelectric conversion layer and including a compound semiconductor material having band gap energy larger than the band gap energy of the photoelectric conversion layer; a first electrode disposed on the mesa portion and configured to read charge photoelectrically converted in the photoelectric conversion layer via the mesa portion; and a transfer gate disposed to face a part of the upper surface side of the photoelectric conversion layer and at least a part of a sidewall of the mesa portion.

Abstract: Aspects of the technology utilize an integrated computing device that supports a shared, communal interaction while still enabling a personalized experience. This includes a unified desktop experience based on presence, a shared family or common space as part of an ambient visual display, and seamless switching involving user interface elements when the display device is rotatable. A presence sensor detects whether someone is at or near the device. When at least one person is identified, specific information is surfaced on a display based on the current context, enabling the person(s) to interact with the device in selected ways. The device evaluates a current presentation state of the display and selects content items to present. The presentation state can include content currently being displayed, other context signals, or any other information associated with the state of the device, such as whether the device is locked or logged-in, for example.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: The technology provides a computing device having a human presence sensor module. An image sensor of the human presence sensor module captures imagery, and the imagery is not disseminated outside of the human presence sensor module to another part of the computing device. One or more machine learning models, each trained to identify whether one or more persons are present in the imagery, are retrieved from memory within the human presence sensor module. The imagery received from the image sensor is processed using the one or more machine learning models to determine whether one or more persons are present in the imagery. Upon detection that one or more persons are present in the imagery, the human presence sensor module issues a signal to an operating system of the computing device so that the computing device can respond to that presence by performing one or more actions.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: Provided is a communication control method of controlling communication between a first electrical switch and a second electrical switch each connected via an optical network and via an electrical network and each responsible for one or more devices to enable a data transfer with high reliability and low latency. The communication control method includes processes of (A) determining the presence or absence of blocking in relation to a first setup request of an optical circuit from the first electrical switch to the second electrical switch and (B) performing, if the blocking is present, at least one process of a first process of transmitting, from the first electrical switch, a second setup request of the optical circuit from the first electrical switch to the second electrical switch and a second process of transmitting a packet or a packet flow related to the first setup request from the first electrical switch via the electrical network.

Abstract: There is provided a light-detecting device. A light-detecting device includes a first substrate including a first electrode, a semiconductor layer, a first insulating film, and a via, and a second substrate that faces the first substrate and is electrically connected to the semiconductor layer through the via. The semiconductor layer includes a compound semiconductor material. The first electrode includes a first portion and the second portion. The first portion of the first electrode is in contact with the semiconductor layer, and the second portion is in contact with both the first insulating film and the via.

Abstract: There is provided a light detecting device. The light detecting device includes an element substrate including an element region and a peripheral region and a circuit substrate that faces the element substrate and is electrically connected to the semiconductor layer through the first wiring layer. The element region includes a first wiring layer and a semiconductor layer. The semiconductor layer includes a compound semiconductor material, and the peripheral region is outside the element region in a plan view. An outer boundary of the element substrate is different from an outer boundary of the circuit substrate.

Abstract: A tool exchange device includes a first coupling member attached to one of a body side of an apparatus and a tool side and having a first coupling surface, and a second coupling member attached to the other of the body side and the tool side and having a second coupling surface capable of being in contact with the first coupling surface, in which the first coupling member includes, on the first coupling surface, a first pin, a second pin, and an auxiliary projection, the second coupling member includes, on the second coupling surface, a first hole, a second hole, and an auxiliary hole, a first gap is provided each between the first pin and the first hole and between the second pin and the second hole, a second gap is provided between the auxiliary projection and the auxiliary hole, and the second gap is larger than the first gap.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

Abstract: According to the present disclosure, there is provided an imaging device including: a first semiconductor layer (180) formed on a semiconductor substrate; a second semiconductor layer (170) formed on the first semiconductor layer (180) and having an opposite conductivity type to the first semiconductor layer (180); a pixel separation portion (150) configured to demarcate a pixel region including the first semiconductor layer (180) and the second semiconductor layer (170); a first electrode (130) connected to the first semiconductor layer (180) from one surface side of the semiconductor substrate; and a metal layer (152) connected to the second semiconductor layer (170) from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion (150) in at least a part of the semiconductor substrate in a thickness direction.