Patents by Inventor Ryosuke Matsumoto

Ryosuke Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210001482
    Abstract: A machine learning device for a robot that allows a human and the robot to work cooperatively, the machine learning device including a state observation unit that observes a state variable representing a state of the robot during a period in that the human and the robot work cooperatively; a determination data obtaining unit that obtains determination data for at least one of a level of burden on the human and a working efficiency; and a learning unit that learns a training data set for setting an action of the robot, based on the state variable and the determination data.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Taketsugu TSUDA, Daisuke OKANOHARA, Ryosuke OKUTA, Eiichi MATSUMOTO, Keigo KAWAAI
  • Publication number: 20200382235
    Abstract: A transmitter generates a burst signal obtained by multiplexing signals of a first polarization and a second polarization orthogonal to each other, and including, at the beginning thereof, a pilot sequence in which the first and the second polarizations each have single frequency components of a first frequency and a second frequency different from each other. A coherent light reception unit performs conversion into an electrical signal by allowing received light and local light to interfere with each other. A pilot sequence detection unit detects a pilot sequence from the converted electrical signal. The polarization estimation unit estimates polarization states of the first polarization and the second polarization at a receiver from frequency components corresponding to the first frequency, and the second frequency. An equalizer demultiplexes the first polarization and the second polarization on the basis of the estimated polarization states.
    Type: Application
    Filed: August 28, 2017
    Publication date: December 3, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Keisuke MATSUDA, Ryosuke MATSUMOTO, Naoki SUZUKI
  • Publication number: 20200365629
    Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
    Type: Application
    Filed: August 7, 2020
    Publication date: November 19, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Jun OGI, Yoshiaki TASHIRO, Takahiro TOYOSHIMA, Yorito SAKANO, Yusuke OIKE, Hongbo ZHU, Keiichi NAKAZAWA, Yukari TAKEYA, Atsushi OKUYAMA, Yasufumi MIYOSHI, Ryosuke MATSUMOTO, Atsushi HORIUCHI
  • Patent number: 10840398
    Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: November 17, 2020
    Assignee: Sony Corporation
    Inventors: Shuji Manda, Atsushi Okuyama, Ryosuke Matsumoto
  • Patent number: 10807235
    Abstract: A machine learning device for a robot that allows a human and the robot to work cooperatively, the machine learning device including a state observation unit that observes a state variable representing a state of the robot during a period in that the human and the robot work cooperatively; a determination data obtaining unit that obtains determination data for at least one of a level of burden on the human and a working efficiency; and a learning unit that learns a training data set for setting an action of the robot, based on the state variable and the determination data.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: October 20, 2020
    Assignees: FANUC CORPORATION, PREFERRED NETWORKS, INC.
    Inventors: Taketsugu Tsuda, Daisuke Okanohara, Ryosuke Okuta, Eiichi Matsumoto, Keigo Kawaai
  • Publication number: 20200321386
    Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.
    Type: Application
    Filed: December 12, 2018
    Publication date: October 8, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Shuji MANDA, Ryosuke MATSUMOTO, Suguru SAITO, Shigehiro IKEHARA, Tetsuji YAMAGUCHI, Shunsuke MARUYAMA
  • Patent number: 10777597
    Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: September 15, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Jun Ogi, Yoshiaki Tashiro, Takahiro Toyoshima, Yorito Sakano, Yusuke Oike, Hongbo Zhu, Keiichi Nakazawa, Yukari Takeya, Atsushi Okuyama, Yasufumi Miyoshi, Ryosuke Matsumoto, Atsushi Horiuchi
  • Publication number: 20200254622
    Abstract: A machine learning device that learns an operation of a robot for picking up, by a hand unit, any of a plurality of workpieces placed in a random fashion, including a bulk-loaded state, includes a state variable observation unit that observes a state variable representing a state of the robot, including data output from a three-dimensional measuring device that obtains a three-dimensional map for each workpiece, an operation result obtaining unit that obtains a result of a picking operation of the robot for picking up the workpiece by the hand unit, and a learning unit that learns a manipulated variable including command data for commanding the robot to perform the picking operation of the workpiece, in association with the state variable of the robot and the result of the picking operation, upon receiving output from the state variable observation unit and output from the operation result obtaining unit.
    Type: Application
    Filed: April 28, 2020
    Publication date: August 13, 2020
    Inventors: Takashi YAMAZAKI, Takumi OYAMA, Shun SUYAMA, Kazutaka NAKAYAMA, Hidetoshi KUMIYA, Hiroshi NAKAGAWA, Daisuke OKANOHARA, Ryosuke OKUTA, Eiichi MATSUMOTO, Keigo KAWAAI
  • Patent number: 10717196
    Abstract: A machine learning device that learns an operation of a robot for picking up, by a hand unit, any of a plurality of workpieces placed in a random fashion, including a bulk-loaded state, includes a state variable observation unit that observes a state variable representing a state of the robot, including data output from a three-dimensional measuring device that obtains a three-dimensional map for each workpiece, an operation result obtaining unit that obtains a result of a picking operation of the robot for picking up the workpiece by the hand unit, and a learning unit that learns a manipulated variable including command data for commanding the robot to perform the picking operation of the workpiece, in association with the state variable of the robot and the result of the picking operation, upon receiving output from the state variable observation unit and output from the operation result obtaining unit.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: July 21, 2020
    Assignees: FANUC CORPORATION, PREFERRED NETWORKS, INC.
    Inventors: Takashi Yamazaki, Takumi Oyama, Shun Suyama, Kazutaka Nakayama, Hidetoshi Kumiya, Hiroshi Nakagawa, Daisuke Okanohara, Ryosuke Okuta, Eiichi Matsumoto, Keigo Kawaai
  • Publication number: 20200212236
    Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.
    Type: Application
    Filed: February 12, 2020
    Publication date: July 2, 2020
    Applicant: SONY CORPORATION
    Inventors: Shuji MANDA, Atsushi OKUYAMA, Ryosuke MATSUMOTO
  • Publication number: 20200194151
    Abstract: A sintered body that includes semiconductor ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.
    Type: Application
    Filed: September 19, 2018
    Publication date: June 18, 2020
    Inventors: KEN YANAI, TOMOKAZU YAMAGUCHI, YUJI YAMAGISHI, NAOKI MUTOU, SAYAKA MATSUMOTO, RYOSUKE USUI
  • Publication number: 20200119814
    Abstract: Each of a first filter to a fourth filter is an FIR filter having one tap. Each of a fifth filter and a sixth filter is an FIR filter having less than 46 taps. As a result, it is possible to obtain an adaptive equalization filter having a smaller total number of taps than an adaptive equalization filter using an FIR filter having 24 taps as each of the first to fourth filters.
    Type: Application
    Filed: August 28, 2017
    Publication date: April 16, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Masashi BINKAI, Keisuke MATSUDA, Ryosuke MATSUMOTO
  • Patent number: 10615298
    Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: April 7, 2020
    Assignee: SONY CORPORATION
    Inventors: Shuji Manda, Atsushi Okuyama, Ryosuke Matsumoto
  • Publication number: 20200106347
    Abstract: A method of removing an insulating coating layer of coil wiring includes: a fragmentation step in which a line-shaped region of the insulating coating layer, which separates a removal-planned portion and a remain-planned portion of the insulating coating layer, is removed; a laser irradiation step in which laser light which transmits through the insulating coating layer but which is absorbed by a coil wiring is irradiated from a side of an outer surface of the removal-planned portion toward a boundary of the coil wiring with the insulating coating layer, to carbonize a boundary portion between the insulating coating layer and the coil wiring of the removal-planned portion by generation of heat of the coil wiring; and a coating turn-over step in which air is blown onto the removal-planned portion to turn over and blow off the removal-planned portion.
    Type: Application
    Filed: September 24, 2019
    Publication date: April 2, 2020
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Ken SHIRAI, Yasuyuki HIRAO, Masashi MATSUMOTO, Hiroaki TAKEDA, Ryosuke MARUYAMA
  • Publication number: 20200083262
    Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 12, 2020
    Inventors: HIROSHI TAYANAKA, KENTARO AKIYAMA, YORITO SAKANO, TAKASHI OINOUE, YOSHIYA HAGIMOTO, YUSUKE MATSUMURA, NAOYUKI SATO, YUKI MIYANAMI, YOICHI UEDA, RYOSUKE MATSUMOTO
  • Publication number: 20200052011
    Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Inventors: SHINICHI YOSHIDA, SHUNSUKE MARUYAMA, RYOSUKE MATSUMOTO, SHUJI MANDA, TOMOMASA WATANABE
  • Publication number: 20200035739
    Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.
    Type: Application
    Filed: April 16, 2018
    Publication date: January 30, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Suguru SAITO, Nobutoshi FUJII, Ryosuke MATSUMOTO, Yoshifumi ZAIZEN, Shuji MANDA, Shunsuke MARUYAMA, Hideo SHIMIZU
  • Patent number: 10529767
    Abstract: The present disclosure relates to a solid state image sensor, a fabrication method, and an electronic apparatus, which enable to efficiently provide trench structures, which surrounds respective pixel sections of the solid state image sensor, and through-electrodes side by side. A solid state image sensor according to a first aspect of the present disclosure includes photoelectric conversion sections formed in respective pixel sections of a semiconductor substrate, trench structures defined by walls of insulating films formed in a depth direction of the semiconductor substrate and surrounding the respective pixel sections, and through-electrodes formed through the semiconductor substrate at positions overlapping the respective trench structures. The present disclosure can be applied, for example, to back-side illumination CMOS image sensors.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: January 7, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Naoyuki Sato, Ryosuke Matsumoto, Junpei Yamamoto
  • Patent number: 10514947
    Abstract: A host computer 30 that manages a container built on an operating system includes a processor 31. The processor 31 is configured to duplicate a second container based on a container image of a first container, and configure a hardware resource used by the first container such that the hardware resource can also be used by the second container. A nonvolatile storage device 36 of the host computer 30 stores container resource information in which the container image of the first container and the hardware resource used by the first container is associated, and the processor 31 is configured to, when duplicating the second container based on the container image of the first container, duplicate the hardware resource associated with the container image of the first container, and configure the duplicated hardware resource such that the duplicated hardware resource can be used by the second container.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: December 24, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Ryosuke Kondo, Shinji Osako, Akihisa Nagami, Hiroshi Yamakawa, Keisuke Matsumoto, Kenji Ozoe
  • Patent number: 10515988
    Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: December 24, 2019
    Assignee: SONY CORPORATION
    Inventors: Hiroshi Tayanaka, Kentaro Akiyama, Yorito Sakano, Takashi Oinoue, Yoshiya Hagimoto, Yusuke Matsumura, Naoyuki Sato, Yuki Miyanami, Yoichi Ueda, Ryosuke Matsumoto