Patents by Inventor Ryosuke Matsumoto
Ryosuke Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11217612Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.Type: GrantFiled: November 14, 2019Date of Patent: January 4, 2022Assignee: SONY CORPORATIONInventors: Hiroshi Tayanaka, Kentaro Akiyama, Yorito Sakano, Takashi Oinoue, Yoshiya Hagimoto, Yusuke Matsumura, Naoyuki Sato, Yuki Miyanami, Yoichi Ueda, Ryosuke Matsumoto
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Publication number: 20210384246Abstract: A semiconductor element including: an element substrate provided with an element region at a middle part and a peripheral region outside the element region; and a readout circuit substrate facing the element substrate, in which the element substrate includes a first semiconductor layer provided in the element region and including a compound semiconductor material, a wiring layer provided between the first semiconductor layer and the readout circuit substrate, the wiring layer electrically coupling the first semiconductor layer and the readout circuit substrate to each other, a first passivation film provided between the wiring layer and the first semiconductor layer, and a second passivation film opposed to the first passivation film with the first semiconductor layer interposed therebetween, and in which the peripheral region of the element substrate includes a bonded surface with respect to the readout circuit substrate.Type: ApplicationFiled: October 3, 2019Publication date: December 9, 2021Inventor: RYOSUKE MATSUMOTO
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Patent number: 10994424Abstract: Provided are a tool exchange device and a tool exchange system that enable management of a coupling state according to a tool to be fixed. A tool exchange device including a male member to be detachably attached to an apparatus side and a female member to be detachably attached to a tool side includes: a proximity sensor provided in the male member; and a target provided in the female member, the target corresponding to the proximity sensor, and the target is provided in the female member in such a manner that a distance between the target and the proximity sensor in a state in which the male member and the female member are coupled together is adjustable.Type: GrantFiled: April 12, 2017Date of Patent: May 4, 2021Assignee: NITTA CORPORATIONInventor: Ryosuke Matsumoto
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Patent number: 10991745Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.Type: GrantFiled: April 16, 2018Date of Patent: April 27, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Suguru Saito, Nobutoshi Fujii, Ryosuke Matsumoto, Yoshifumi Zaizen, Shuji Manda, Shunsuke Maruyama, Hideo Shimizu
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Patent number: 10985845Abstract: Each of a first filter to a fourth filter is an FIR filter having one tap. Each of a fifth filter and a sixth filter is an FIR filter having less than 46 taps. As a result, it is possible to obtain an adaptive equalization filter having a smaller total number of taps than an adaptive equalization filter using an FIR filter having 24 taps as each of the first to fourth filters.Type: GrantFiled: August 28, 2017Date of Patent: April 20, 2021Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Masashi Binkai, Keisuke Matsuda, Ryosuke Matsumoto
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Patent number: 10951345Abstract: A transmitter generates a burst signal obtained by multiplexing signals of a first polarization and a second polarization orthogonal to each other, and including, at the beginning thereof, a pilot sequence in which the first and the second polarizations each have single frequency components of a first frequency and a second frequency different from each other. A coherent light reception unit performs conversion into an electrical signal by allowing received light and local light to interfere with each other. A pilot sequence detection unit detects a pilot sequence from the converted electrical signal. The polarization estimation unit estimates polarization states of the first polarization and the second polarization at a receiver from frequency components corresponding to the first frequency, and the second frequency. An equalizer demultiplexes the first polarization and the second polarization on the basis of the estimated polarization states.Type: GrantFiled: August 28, 2017Date of Patent: March 16, 2021Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Keisuke Matsuda, Ryosuke Matsumoto, Naoki Suzuki
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Patent number: 10943932Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.Type: GrantFiled: October 17, 2019Date of Patent: March 9, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinichi Yoshida, Shunsuke Maruyama, Ryosuke Matsumoto, Shuji Manda, Tomomasa Watanabe
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Publication number: 20200382235Abstract: A transmitter generates a burst signal obtained by multiplexing signals of a first polarization and a second polarization orthogonal to each other, and including, at the beginning thereof, a pilot sequence in which the first and the second polarizations each have single frequency components of a first frequency and a second frequency different from each other. A coherent light reception unit performs conversion into an electrical signal by allowing received light and local light to interfere with each other. A pilot sequence detection unit detects a pilot sequence from the converted electrical signal. The polarization estimation unit estimates polarization states of the first polarization and the second polarization at a receiver from frequency components corresponding to the first frequency, and the second frequency. An equalizer demultiplexes the first polarization and the second polarization on the basis of the estimated polarization states.Type: ApplicationFiled: August 28, 2017Publication date: December 3, 2020Applicant: Mitsubishi Electric CorporationInventors: Keisuke MATSUDA, Ryosuke MATSUMOTO, Naoki SUZUKI
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Publication number: 20200365629Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.Type: ApplicationFiled: August 7, 2020Publication date: November 19, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Jun OGI, Yoshiaki TASHIRO, Takahiro TOYOSHIMA, Yorito SAKANO, Yusuke OIKE, Hongbo ZHU, Keiichi NAKAZAWA, Yukari TAKEYA, Atsushi OKUYAMA, Yasufumi MIYOSHI, Ryosuke MATSUMOTO, Atsushi HORIUCHI
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Patent number: 10840398Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.Type: GrantFiled: February 12, 2020Date of Patent: November 17, 2020Assignee: Sony CorporationInventors: Shuji Manda, Atsushi Okuyama, Ryosuke Matsumoto
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Publication number: 20200321386Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.Type: ApplicationFiled: December 12, 2018Publication date: October 8, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shuji MANDA, Ryosuke MATSUMOTO, Suguru SAITO, Shigehiro IKEHARA, Tetsuji YAMAGUCHI, Shunsuke MARUYAMA
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Patent number: 10777597Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.Type: GrantFiled: March 20, 2018Date of Patent: September 15, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Jun Ogi, Yoshiaki Tashiro, Takahiro Toyoshima, Yorito Sakano, Yusuke Oike, Hongbo Zhu, Keiichi Nakazawa, Yukari Takeya, Atsushi Okuyama, Yasufumi Miyoshi, Ryosuke Matsumoto, Atsushi Horiuchi
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Publication number: 20200212236Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.Type: ApplicationFiled: February 12, 2020Publication date: July 2, 2020Applicant: SONY CORPORATIONInventors: Shuji MANDA, Atsushi OKUYAMA, Ryosuke MATSUMOTO
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Publication number: 20200119814Abstract: Each of a first filter to a fourth filter is an FIR filter having one tap. Each of a fifth filter and a sixth filter is an FIR filter having less than 46 taps. As a result, it is possible to obtain an adaptive equalization filter having a smaller total number of taps than an adaptive equalization filter using an FIR filter having 24 taps as each of the first to fourth filters.Type: ApplicationFiled: August 28, 2017Publication date: April 16, 2020Applicant: Mitsubishi Electric CorporationInventors: Masashi BINKAI, Keisuke MATSUDA, Ryosuke MATSUMOTO
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Patent number: 10615298Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.Type: GrantFiled: February 8, 2017Date of Patent: April 7, 2020Assignee: SONY CORPORATIONInventors: Shuji Manda, Atsushi Okuyama, Ryosuke Matsumoto
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Publication number: 20200083262Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.Type: ApplicationFiled: November 14, 2019Publication date: March 12, 2020Inventors: HIROSHI TAYANAKA, KENTARO AKIYAMA, YORITO SAKANO, TAKASHI OINOUE, YOSHIYA HAGIMOTO, YUSUKE MATSUMURA, NAOYUKI SATO, YUKI MIYANAMI, YOICHI UEDA, RYOSUKE MATSUMOTO
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Publication number: 20200052011Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.Type: ApplicationFiled: October 17, 2019Publication date: February 13, 2020Inventors: SHINICHI YOSHIDA, SHUNSUKE MARUYAMA, RYOSUKE MATSUMOTO, SHUJI MANDA, TOMOMASA WATANABE
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Publication number: 20200035739Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.Type: ApplicationFiled: April 16, 2018Publication date: January 30, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Suguru SAITO, Nobutoshi FUJII, Ryosuke MATSUMOTO, Yoshifumi ZAIZEN, Shuji MANDA, Shunsuke MARUYAMA, Hideo SHIMIZU
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Patent number: 10529767Abstract: The present disclosure relates to a solid state image sensor, a fabrication method, and an electronic apparatus, which enable to efficiently provide trench structures, which surrounds respective pixel sections of the solid state image sensor, and through-electrodes side by side. A solid state image sensor according to a first aspect of the present disclosure includes photoelectric conversion sections formed in respective pixel sections of a semiconductor substrate, trench structures defined by walls of insulating films formed in a depth direction of the semiconductor substrate and surrounding the respective pixel sections, and through-electrodes formed through the semiconductor substrate at positions overlapping the respective trench structures. The present disclosure can be applied, for example, to back-side illumination CMOS image sensors.Type: GrantFiled: July 1, 2016Date of Patent: January 7, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Naoyuki Sato, Ryosuke Matsumoto, Junpei Yamamoto
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Patent number: 10515988Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.Type: GrantFiled: February 12, 2016Date of Patent: December 24, 2019Assignee: SONY CORPORATIONInventors: Hiroshi Tayanaka, Kentaro Akiyama, Yorito Sakano, Takashi Oinoue, Yoshiya Hagimoto, Yusuke Matsumura, Naoyuki Sato, Yuki Miyanami, Yoichi Ueda, Ryosuke Matsumoto