Abstract: An object of the present invention is to provide a multilayered heat-recoverable article in which an adhesive layer easily flows during heat shrinkage to ensure adhesiveness with an adherend and does not flow out from a base material layer after heat shrinkage, and a wire splice and a wire harness that include a tube formed by thermally shrinking such a multilayered heat-recoverable article. The multilayered heat-recoverable article (1) according to the present invention includes a cylindrical base material layer (10), and an adhesive layer (11) formed on an inner circumferential surface of the base material layer. The adhesive layer (11) is formed of a resin composition that contains a polyamide as a main component and that does not substantially contain an inorganic filler. The resin composition is cross-linked by irradiation with ionizing radiation. A shear viscosity of the adhesive layer (11) at 150° C. is 300 Pa·s or more at a shear rate of 0.01 s?1 and 200 Pa·s or less at a shear rate of 100 s?1.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: It is an object of the present invention to provide a heat-recoverable article which heat-shrinks in an appropriate temperature range, in which the occurrence of bloom and bleeding is small, and which has excellent resistance to copper-induced damage; and a wire splice and a wire harness each including the heat-recoverable article. A heat-recoverable article according to the present invention has a cylindrical shape and includes a base material layer, in which the base material layer contains an antioxidant and two or more polyolefin resins, the base material layer has one melting-point peak temperature, the melting-point peak temperature is 112° C. to 128° C., the heat of fusion of all of the resin components of the base material layer is 80 to 130 J/g, and the oxidation induction temperature of the base material layer is 265° C. to 280° C.

Abstract: An object of the present invention is to provide a multilayered heat-recoverable article in which an adhesive layer easily flows during heat shrinkage to ensure adhesiveness with an adherend and does not flow out from a base material layer after heat shrinkage, and a wire splice and a wire harness that include a tube formed by thermally shrinking such a multilayered heat-recoverable article. The multilayered heat-recoverable article (1) according to the present invention includes a cylindrical base material layer (10), and an adhesive layer (11) formed on an inner circumferential surface of the base material layer. The adhesive layer (11) is formed of a resin composition that contains a polyamide as a main component and that does not substantially contain an inorganic filler. The resin composition is cross-linked by irradiation with ionizing radiation. A shear viscosity of the adhesive layer (11) at 150° C. is 300 Pa·s or more at a shear rate of 0.01 s?1 and 200 Pa·s or less at a shear rate of 100 s?1.

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: The present invention provides a semiconductor device in which a power line is not affected by noise due to a voltage drop caused by instantaneous high-current consumption in the buffer portion and that has no possibility that a logic portion malfunctions. In a case where the same potential is supplied to a logic portion and a buffer portion, by a method in which separate FPC terminals are used for the logic portion and the buffer portion, or by a method in which the FPC terminal is shared but a power line is branched for the logic portion and the buffer portion at a point close to the FPC terminal, a problem that the logic portion is affected by noise generated by a voltage drop of the power line due to instantaneous high-current consumption in the buffer portion can be prevented.

Abstract: The liquid crystal display device performs display by changing the number of gray scales depending on external light intensity, and switches the display mode in accordance with a content to be displayed on a display. By controlling a display mode-specific video signal generation circuit depending on external light intensity, an inputted video signal is outputted as an analog value, is outputted with a digital value of a binary, or is outputted with a multiple digital value. As a result, display gradation of a pixel changes timely. Accordingly, a clear image can be displayed. For example, a display device which secures visibility can be obtained in a wide range from under fluorescent light in a dark place or indoor to under outdoor sunlight.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: If a potential of a gate electrode of a driving transistor varies after a gray scale signal is inputted into each pixel, a current value of a current supplied to a light emitting element varies so that accurate gray scale display cannot be obtained. In particular, in the case of performing black display, current may flow, which makes clear black display difficult. Accordingly, the invention provides a light emitting device capable of performing accurate gray scale display, and a driving method thereof. According to the invention, a signal for display is inputted plural times within a predetermined timing period, or a writing operation period is lengthened. Consequently, the gate voltage of the transistor is determined after the anode potential of the light emitting element is stabilized, and therefore accurate gray scale display can be performed.

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: A problem in that a light emitting element slightly emits light is solved by an off current of a thin film transistor connected in series to the light emitting element, thereby a display device which can perform a clear display by increasing contrast, and a driving method thereof are provided. When the thin film transistor connected in series to the light emitting element is turned off, a charge held in the capacitance of the light emitting element itself is discharged. Even when an off current is generated at the thin film transistor connected in series to the light emitting element, this off current charges this capacitance until the capacitance of the light emitting element itself holds a predetermined voltage again. Accordingly, the off current of the thin film transistor does not contribute to light emission. In this manner, a slight light emission of the light emitting element can be reduced.

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: According to a driving method of applying a reverse bias voltage, capacitance occurs due to a stacked structure of a conductor, an insulator and a conductor, or due to a structure of a TFT. This capacitance prevents normal operation. The invention provides a pixel configuration including at least a driving transistor for driving a light emitting element and a switching transistor for controlling the driving transistor, wherein the switching transistor is turned on in the case of applying a forward bias voltage after applying a reverse bias voltage. As a result, it is prevented that the potential changes due to unwanted capacitive coupling.

Abstract: A problem in that a light emitting element slightly emits light is solved by an off current of a thin film transistor connected in series to the light emitting element, thereby a display device which can perform a clear display by increasing contrast, and a driving method thereof are provided. When the thin film transistor connected in series to the light emitting element is turned off, a charge held in the capacitance of the light emitting element itself is discharged. Even when an off current is generated at the thin film transistor connected in series to the light emitting element, this off current charges this capacitance until the capacitance of the light emitting element itself holds a predetermined voltage again. Accordingly, the off current of the thin film transistor does not contribute to light emission. In this manner, a slight light emission of the light emitting element can be reduced.

Abstract: It is an object of the present invention to provide a display device in which images can be seen under a dark place to intense external light. In the display device, display is performed by changing the gray scale number depending on external light intensity, and display modes can be switched depending on contents displayed on the screen. An analog mode and a digital mode are switched depending on external light intensity. In an analog digital switching circuit, when a video signal is an analog value, a signal is outputted to a pixel array without any change and, when the video signal is a digital value, the signal is outputted to a circuit that performs a digital operation such as a latch circuit. Consequently, display gray scales of a pixel are changed appropriately. Accordingly, a clear image can be displayed. For example, it is possible to ensure visibility in a wide range of a dark place or under indoor florescent light to outdoor sun light.

Abstract: The invention provides a light emitting device and an element substrate in which a luminance variation of light emitting elements among pixels due to variation in characteristics of driving transistors can be suppressed even without suppressing the off-current of a switching transistor low or increasing the capacitance of a capacitor. A gate of a first transistor is connected to a first scan line, and a gate of a second transistor is connected to a second scan line. A connection between a signal line and a gate of a third transistor is controlled by the first transistor. The second transistor and the third transistor are connected in series between a pixel electrode of a light emitting element and a power supply line. The signal line, the second scan line and the power supply line are disposed in parallel, while the first scan line is crossed with the signal line, the second scan line and the power supply line.