Abstract: An integrated circuit fabrication process as described herein employs a photoresist stabilization step where patterned photoresist material is exposed to radiation having a wavelength that promotes cross-linking in the shallow surfaces of the patterned photoresist features. The patterned photoresist material is highly absorptive of the stabilizing radiation, which results in the surface cross-linking and modification of the outer surfaces of the patterned photoresist material. This modified “shell” is immune to photoresist developer, photoresist solvents, intense ion implantation, and intense etchants. The shell also enables for the resist not to deform when baked at a temperature above its glass transition temperature. For example, the photoresist stabilization technique can be used in a double exposure process such that a patterned photoresist layer remains intact during a subsequent lithographic sub-process.