Abstract: A substrate processing method including: a) providing a substrate having a first region on a surface; b) supplying a precursor to the surface of the substrate, the precursor including at least both a halogen and carbon and being configured to form a first chemical bond in the first region; and c) exposing the surface of the substrate to a plasma of an inert gas.

Abstract: A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.

Abstract: A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, and position 13 of the triptycene skeleton are arranged, and a second plane in which position 4, position 5, and position 16 of the triptycene skeleton are arranged. The triptycene derivative includes a first side chain on a one plane side, the one plane side being on a side of one plane from among the first plane and the second plane, and a second side chain on another plane side or on the one plane side, the another plane side being on a side of another plane from among the first plane and the second plane. The second side chain is different from the first side chain in an etching selectivity ratio.

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

Abstract: A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

Abstract: A mask pattern formation method includes applying a substance that includes a polymerizable ionic liquid to a substrate, causing a polymerization reaction of the polymerizable ionic liquid for at least a part of the substance that includes a polymerizable ionic liquid to produce a substance that include a polymeric ionic liquid on the substrate, and forming a mask pattern of the substance that includes a polymeric ionic liquid on the substrate by using the substance that includes a polymeric ionic liquid.

Abstract: Embodiments of improved methods and processes are provided for patterning a semiconductor substrate using direct self-assembly (DSA) of ionic liquid crystals (ILCs). In the disclosed embodiments, an ILC solution comprising ILCs is deposited on a variety of substrate surfaces. An upper surface of the ILC solution is exposed to a gas phase, non-polar solvent (such as, e.g., hexane gas). The gas phase, non-polar solvent provides an ambient environment that promotes self-assembly of the ILCs into vertically layered ILC structures.

Abstract: A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Abstract: A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.

Abstract: A method for observing a surface includes a) and b). At the a), a material including at least one or more solid luminescent dye molecules is accumulated in a region having an abnormal shape in a substrate or in a structure on the substrate. At the b), the region having the abnormal shape in the substrate or in the structure on the substrate is irradiated with illumination light to acquire the fluorescent image of the solid luminescent dye molecules.

Abstract: A substrate processing method according to one embodiment of the present disclosure includes preparing a substrate having a target film exposed on a surface of the substrate, forming a liquid film on a surface of the target film by supplying an ionic liquid containing an oxoacid structure having 6 or more carbon atoms to the surface of the substrate at a first temperature, forming a solid film by cooling the substrate to a second temperature lower than the first temperature to solidify the liquid film, and removing the solid film by supplying a polar solvent to the substrate.

Abstract: A substrate processing apparatus includes a processing container in which a substrate to be processed is accommodated and substrate processing is performed, a liquid supplier configured to supply a first ionic liquid to an interior of the processing container, a liquid recoverer configured to recover the first ionic liquid from the interior of the processing container, a connection pipe configured to connect the liquid recoverer to the liquid supplier, and a gas supplier configured to supply gas to the connection pipe to send the first ionic liquid to the liquid supplier from the liquid recoverer by a gas lift pump action of the gas which rises.

Abstract: Embodiments of improved methods and processes are provided for patterning a semiconductor substrate using direct self-assembly (DSA) of ionic liquid crystals (ILCs). In the disclosed embodiments, an ILC solution comprising ILCs is deposited on a variety of substrate surfaces. An upper surface of the ILC solution is exposed to a gas phase, non-polar solvent (such as, e.g., hexane gas). The gas phase, non-polar solvent provides an ambient environment that promotes self-assembly of the ILCs into vertically layered ILC structures.

Abstract: A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, and position 13 of the triptycene skeleton are arranged, and a second plane in which position 4, position 5, and position 16 of the triptycene skeleton are arranged. The triptycene derivative includes a first side chain on a one plane side, the one plane side being on a side of one plane from among the first plane and the second plane, and a second side chain on another plane side or on the one plane side, the another plane side being on a side of another plane from among the first plane and the second plane. The second side chain is different from the first side chain in an etching selectivity ratio.

Abstract: A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Abstract: A disclosed etching method includes (a) etching a titanium nitride film with a first plasma, and (b) etching the titanium nitride film with a second plasma. The first plasma is generated from a first processing gas, and the second plasma is generated from a second processing gas. One of the first processing gas and the second processing gas contains a chlorine-containing gas and a fluorocarbon gas, and the other of the first processing gas and the second processing gas contains a chlorine-containing gas and does not contain a fluorocarbon gas. A repetition of a cycle including the operations (a) and (b) is performed. The repetition of the cycle is stopped in a state where the titanium nitride film is partially etched in a film thickness direction thereof.

Abstract: A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

Abstract: A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.