Patents by Inventor Ryuichi Asako
Ryuichi Asako has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8268721Abstract: There are provided a semiconductor device and a semiconductor device manufacturing method capable of preventing electrical leakage while suppressing increase of wiring resistance and deterioration of productivity. The semiconductor device manufacturing method for forming on a substrate a semiconductor device having a porous low-k film serving as an interlayer insulating film. Further, the semiconductor device manufacturing method includes forming the low-k film on the substrate; etching the low-k film to form a trench or a hole therein; reforming a surface of the low-k film exposed by etching the low-k film by allowing plasma of a nitro compound to act on the exposed surface within the trench or the hole; and filling the trench or the hole with a conductor.Type: GrantFiled: June 29, 2011Date of Patent: September 18, 2012Assignee: Tokyo Electron LimitedInventor: Ryuichi Asako
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Publication number: 20120132365Abstract: There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a CO2 plasma processing mechanism for performing a CO2 plasma process that exposes the substrate to CO2 plasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the CO2 plasma process; and a transfer mechanism for transferring the substrate.Type: ApplicationFiled: December 19, 2011Publication date: May 31, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Gousuke Shiraishi, Shigeru Tahara
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Publication number: 20120034779Abstract: In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.Type: ApplicationFiled: October 19, 2011Publication date: February 9, 2012Inventors: Satoru SHIMURA, Kazuhiro Kubota, Ryuichi Asako, Seiichi Takayama
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Patent number: 8101507Abstract: There is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing method includes: an etching process for etching a low dielectric insulating film formed on a substrate; a CO2 plasma process for exposing the substrate to CO2 plasma after the etching process; and a UV process for irradiating UV to the low dielectric insulating film after the CO2 plasma process.Type: GrantFiled: October 16, 2009Date of Patent: January 24, 2012Assignee: Tokyo Electron LimitedInventors: Ryuichi Asako, Gousuke Shiraishi, Shigeru Tahara
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Publication number: 20120001304Abstract: There are provided a semiconductor device and a semiconductor device manufacturing method capable of preventing electrical leakage while suppressing increase of wiring resistance and deterioration of productivity. The semiconductor device manufacturing method for forming on a substrate a semiconductor device having a porous low-k film serving as an interlayer insulating film. Further, the semiconductor device manufacturing method includes forming the low-k film on the substrate; etching the low-k film to form a trench or a hole therein; reforming a surface of the low-k film exposed by etching the low-k film by allowing plasma of a nitro compound to act on the exposed surface within the trench or the hole; and filling the trench or the hole with a conductor.Type: ApplicationFiled: June 29, 2011Publication date: January 5, 2012Applicant: TOKYO ELECTRON LIMITEDInventor: Ryuichi Asako
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Patent number: 8075730Abstract: In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.Type: GrantFiled: June 29, 2005Date of Patent: December 13, 2011Assignee: Tokyo Electron LimitedInventors: Satoru Shimura, Kazuhiro Kubota, Ryuichi Asako, Seiichi Takayama
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Publication number: 20110294232Abstract: There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).Type: ApplicationFiled: August 9, 2011Publication date: December 1, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Yusuke Ohsawa
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Patent number: 8058153Abstract: There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).Type: GrantFiled: June 12, 2008Date of Patent: November 15, 2011Assignee: Tokyo Electron LimitedInventors: Ryuichi Asako, Yusuke Ohsawa
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Publication number: 20110120650Abstract: A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.Type: ApplicationFiled: February 2, 2011Publication date: May 26, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi Asako, Kaoru Maekawa, Yasushi Fujii
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Patent number: 7902077Abstract: A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.Type: GrantFiled: November 29, 2006Date of Patent: March 8, 2011Assignee: Tokyo Electron LimitedInventors: Ryuichi Asako, Kaoru Maekawa, Yasushi Fujii
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Patent number: 7799703Abstract: A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.Type: GrantFiled: February 4, 2008Date of Patent: September 21, 2010Assignee: Tokyo Electron LimitedInventors: Kazuhiro Kubota, Naotsugu Hoshi, Yuki Chiba, Ryuichi Asako
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Publication number: 20100099256Abstract: There is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing method includes: an etching process for etching a low dielectric insulating film formed on a substrate; a CO2 plasma process for exposing the substrate to CO2 plasma after the etching process; and a UV process for irradiating UV to the low dielectric insulating film after the CO2 plasma process.Type: ApplicationFiled: October 16, 2009Publication date: April 22, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi ASAKO, Gousuke SHIRAISHI, Shigeru TAHARA
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Patent number: 7521098Abstract: A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or a film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.Type: GrantFiled: December 4, 2003Date of Patent: April 21, 2009Assignee: Tokyo Electron LimitedInventors: Kazuyuki Mitsuoka, Tadashi Onishi, Minoru Honda, Ryuichi Asako, Mitsuaki Iwashita
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Publication number: 20090011605Abstract: The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric conType: ApplicationFiled: June 30, 2008Publication date: January 8, 2009Inventors: Yuki Chiba, Eiichi Nishimura, Ryuichi Asako
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Publication number: 20090001046Abstract: The present invention provides a method, an apparatus and the like that may be adopted when executing a specific type of processing on a substrate that includes a recessed portion formed by etching a low dielectric constant insulating film with a low dielectric constant having been formed upon a metal layer. More specifically, a hydrogen radical processing phase in which the surface of the metal layer exposed at the bottom of the recessed portion is cleaned and the low dielectric constant insulating film is dehydrated by supplying hydrogen radicals while heating the substrate to a predetermined temperature and a hydrophobicity processing phase in which the low dielectric constant insulating film exposed at a side surface of the recessed portion is rendered hydrophobic by supplying a specific type of processing gas to the substrate are executed in succession without exposing the substrate to air.Type: ApplicationFiled: June 13, 2008Publication date: January 1, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro KUBOTA, Shigeru Tahara, Ryuichi Asako
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Publication number: 20080311728Abstract: There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).Type: ApplicationFiled: June 12, 2008Publication date: December 18, 2008Applicant: Tokyo Electron LimitedInventors: Ryuichi Asako, Yusuke Ohsawa
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Publication number: 20080194115Abstract: A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.Type: ApplicationFiled: February 4, 2008Publication date: August 14, 2008Applicant: TOKYO ELECTON LIMITEDInventors: Kazuhiro KUBOTA, Naotsugu Hoshi, Yuki Chiba, Ryuichi Asako
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Publication number: 20080057728Abstract: In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.Type: ApplicationFiled: June 29, 2005Publication date: March 6, 2008Applicant: Tokyo Electron LimitedInventors: Satoru Shimura, Kazuhiro Kubota, Ryuichi Asako, Seiichi Takayama
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Publication number: 20080045025Abstract: A method includes forming an etching mask having a predetermined circuit pattern on an Si-containing low dielectric constant film disposed on a semiconductor substrate; performing etching on the Si-containing low dielectric constant film through the etching mask by use of an F-containing gas, thereby forming a groove or hole; performing ashing by use of NH3 gas after said etching, thereby removing the etching mask; removing a by-product generated during said ashing; and then supplying a predetermined recovery gas, thereby recovering damage of the Si-containing low dielectric constant film caused before or in said removing the etching mask.Type: ApplicationFiled: August 17, 2007Publication date: February 21, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi ASAKO, Yuki CHIBA, Kazuhiro KUBOTA
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Publication number: 20070122752Abstract: A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.Type: ApplicationFiled: November 29, 2006Publication date: May 31, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Ryuichi ASAKO, Kaoru Maekawa, Yasushi Fujii