Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle ? with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle ? with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

Abstract: A photoelectric conversion device comprises a photoelectric conversion element disposed at a semiconductor substrate, and a multilayered wiring structure including a plurality of wiring layers disposed over the semiconductor substrate in such a manner to sandwich an interlayer insulation film therebetween. A diffusion suppressing film is disposed at least on the uppermost one of the wiring layers, the diffusion suppressing film serving to suppress diffusion of material forming the uppermost wiring layer; the diffusion suppressing film covers regions of the uppermost wiring layer and the interlayer insulation film corresponding to the photoelectric conversion element; and a lens is disposed with respect to a region of the diffusion suppressing film corresponding to the photoelectric conversion element.

Abstract: An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

Abstract: An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.

Abstract: The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: An image pickup apparatus of the present invention includes a plurality of photoelectric conversion elements disposed on a semiconductor substrate, a multi-layer wiring structure including a plurality of interlayer insulation films disposed above the semiconductor substrate, and a passiation layer disposed above the multi-layer wiring structure. A first insulation layer is disposed below the under surface of the passiation layer; a second insulation layer is disposed above the top surface of the passiation layer; and the refractive indices of the passiation layer and the first insulation layer differ from each other, and the refractive indices of the passiation layer and the second insulation layer differ from each other. Moreover, planarization processing is performed to at least one layer of the interlayer insulation films and the first insulation layer.

Abstract: The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.

Abstract: The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.

Abstract: It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle ? with at least two planes perpendicular to a reference (100) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.