Abstract: For a solid-state image pickup device 1, a plurality of pixels are two dimensionally arranged in an imaging region 10, and two photodiodes PD1 and PD2 are included in each pixel Pm,n. An electric charge generated in the respective photodiodes PD1 and PD2 is input to a signal readout section 20, and a voltage according to an electric charge amount thereof is output from the signal output section 20. The voltage output from the signal readout section 20 is input to an A/D converting section 40, and a digital value according to the input voltage is output from the A/D converting section 40. In an adding section 50, a sum of digital values to be output from the A/D converting section 40 according to the amount of electric charge generated, for each pixel Pm,n of the imaging region 10, in the two respective photodiodes PD1 and PD2 included in the pixel is operated, and a digital value being a sum value thereof is output.

Abstract: The solid-state image pick-up device (1) includes a photodetecting section (10) which is formed by two-dimensionally aligning M×N (M and N are integers not less than 2) pixels in M rows and N columns and has a rectangular photodetecting surface. This solid-state image pick-up device (1) is supported rotatably by a rotation controlling section, and the rotation controlling section controls the rotation angle of the solid-state image pick-up device (1) so that the row direction or column direction of the photodetecting section (10) becomes parallel to the movement direction (B) of the solid-state image pick-up device (1) in one of the two imaging modes, and both of the row direction and the column direction of the photodetecting section (10) tilt with respect to the movement direction (B) of the solid-state image pick-up device (1) in the other imaging mode of the two imaging modes.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: A radiographic imaging apparatus 1 has a solid-state image sensor 11, a scintillator 21, and others. The solid-state image sensor 11 has a photosensitive section 13 and an amplification section 15, which are formed on one side of an Si substrate 12. The photosensitive section 13 includes a plurality of photodiodes 16 as photoelectric converters for photoelectric conversion, and these photodiodes 16 are arrayed in a two-dimensional pattern. The amplification section 15 amplifies outputs from the photodiodes 16 and outputs amplified signals. The scintillator 21 is arranged to cover a region where the photosensitive section 13 and the amplification section 15 are formed on the one side of Si substrate 12, and is formed directly on the region.

Abstract: There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p?-type layer 12c and n+-type semiconductor regions 12d) exposed on a light-incident surface of the semiconductor substrate 12 (p?-type layer 12c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12e is set at the ground potential.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.

Abstract: A radiographic imaging apparatus 1 has a solid-state image sensor 11, a scintillator 21, and others. The solid-state image sensor 11 has a photosensitive section 13 and an amplification section 15, which are formed on one side of an Si substrate 12. The photosensitive section 13 includes a plurality of photodiodes 16 as photoelectric converters for photoelectric conversion, and these photodiodes 16 are arrayed in a two-dimensional pattern. The amplification section 15 amplifies outputs from the photodiodes 16 and outputs amplified signals. The scintillator 21 is arranged to cover a region where the photosensitive section 13 and the amplification section 15 are formed on the one side of Si substrate 12, and is formed directly on the region.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p31 -type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p?-type layer 12c and n+-type semiconductor regions 12d) exposed on a light-incident surface of the semiconductor substrate 12 (p?-type layer 12c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12e is set at the ground potential.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.

Abstract: A solid-state imaging device and a frame are secured onto a base plate. The frame has a positioning portion in contact with a side face of a substrate, so as to protect the bonding wire positioned thereunder while positioning and supporting the substrate abutting thereagainst. The frame is made of a metal, and is further provided with a shield member, so as to restrain X-rays from entering a bonding wire and the like. The substrate is set relatively thin, whereby its X-ray transmissivity improves, though substrate bent occurs in this case. Since an elastic body presses the substrate, the bent of the substrate is corrected.

Abstract: In an X-ray image pickup apparatus comprising first and second semiconductor image sensor chips 14A, 14C arranged adjacent each other on a base plate 20, and a single scintillator panel 40 disposed on the first and second semiconductor image sensor chips, respective planes including surfaces of photosensitive regions of the first and second semiconductor image sensor chips have normals intersecting at a predetermined angle.

Abstract: In an X-ray image pickup apparatus comprising first and second semiconductor image sensor chips 14A, 14C arranged adjacent each other on a base plate 20, and a single scintillator panel 40 disposed on the first and second semiconductor image sensor chips, respective planes including surfaces of photosensitive regions of the first and second semiconductor image sensor chips have normals intersecting at a predetermined angle.

Abstract: A solid-state imaging device and a frame are secured onto a base plate. The frame has a positioning portion in contact with a side face of a substrate, so as to protect the bonding wire positioned thereunder while positioning and supporting the substrate abutting thereagainst. The frame is made of a metal, and is further provided with a shield member, so as to restrain X-rays from entering a bonding wire and the like. The substrate is set relatively thin, whereby its X-ray transmissivity improves, though substrate bent occurs in this case. Since an elastic body presses the substrate, the bent of the substrate is corrected.