Abstract: A memory diagnosis system includes a memory device and a server. The memory device includes a memory module configured to adjust operational parameters in response to a parameter control signal, a memory controller configured to generate the parameter control signal in response to a feedback signal, and a memory state monitor configured to monitor the memory module to generate an information signal that includes information on a state of the memory module. The server is configured to generate the feedback signal in response to the information signal.

Abstract: In a method of reading a memory device, difference information is generated based on a distance difference between a position of a read word-line and a position of a boundary word-line. The read word-line corresponds to a read address. The boundary word-line corresponds to a last programmed word-line in a memory block included in a memory cell array. A read word-line voltage and an adjacent word-line voltage are determined based on the difference information. The read word-line voltage is applied to the read word-line. The adjacent word-line voltage is applied to an adjacent word-line that is adjacent to the read word-line. A read data corresponding to the read address is outputted based on the read word-line voltage and the adjacent word-line voltage.

Abstract: According to example embodiments, a method of controller a memory system using a controller includes receiving a first read count command, determining if a read count of a non-volatile memory in the memory system exceeds a threshold value, and performing a first reading operation on the non-volatile memory according to the first read command. If the read count of the non-volatile memory exceeds the threshold value, then addresses are selected to which a plurality of additive reading operation corresponding to the first read command will be performed, in a random neighbor selection operation. The plurality of additive reading operations for checking data of neighboring pages of the page for performing the reading operation are distributed and processed.

Abstract: A method is for operating a memory system including a memory device. The method includes managing program order information of the memory device based on a program order stamp (POS) indicating a relative temporal relationship between program operations of a plurality of memory groups that are included in the memory device, and controlling a read voltage for performing a read operation on the memory device. The read voltage is controlled based on the program order information and a mapping table that stores a read voltage offset and a POS corresponding to the read voltage offset.

Abstract: The present invention provides a communication recovery method using an isolator in a communication system through a power line of land and marine equipment, wherein the method promptly senses situations, such as a disconnection or a short-circuit of a communication line, and restores the communication line for sensing and warning fire or gas in a larger sized space such as an inside/outside of a ship and an inside/outside of a plant or a building.

Abstract: Disclosed is a display device. The display device includes a liquid crystal panel, a backlight unit configured to include a light source that supplies light to the liquid crystal panel, and a polarizing part adhered to the liquid crystal panel. The polarizing part is formed to extend in an outer direction of the liquid crystal panel, and surrounds at least one of an outside of the liquid crystal panel and an outside of the backlight unit.

Abstract: A method of determining a default read voltage of a non-volatile memory device which includes a plurality of first memory cells, each of which stores a plurality of data bits as one of a plurality of threshold voltages corresponding to a plurality of logic states, includes programming a first data to the first memory cells so that the logic states of the first memory cells are balanced or equally used. The method includes applying a first default read voltage included in default read voltages to word lines coupled to the first memory cells, and measuring a first ratio of first on-cells, each of which has a threshold voltage smaller than or equal to the first default read voltage, among the first memory cells, and modifying the first default read voltage based on the first ratio and a first reference value corresponding to the first default read voltage.

Abstract: In a method of manufacturing a semiconductor device, a blend solution that includes a block copolymer and an adsorbent is prepared. The block copolymer is synthesized by a copolymerization between a first polymer unit and a second polymer unit having a hydrophilicity greater than that of the first polymer unit. The adsorbent on which the block copolymer is adsorbed is extracted. The block copolymer is separated from the adsorbent. The block copolymer is collected. The block copolymer may be used to form a mask on an object layer on a substrate and the mask used to etch the object layer.

Abstract: A method of providing an integrated module in a human machine interface (HMI) module in a vehicle includes sensing a switch input signal on a center fascia panel, identifying a switch type based on the sensed switch input signal, identifying an input signal corresponding to the sensed switch input signal and the identified switch type, and identifying an output signal corresponding to the identified input signal, and transmitting the identified output signal to an associated main controller through a communication network in the vehicle.

Abstract: Provided are a PNA probe for detecting nucleotide polymorphism of a target gene, a melting curve analysis method for detecting the nucleotide polymorphism of the target gene using the same, a nucleotide polymorphism analysis method of a target gene including the melting curve analysis method, and a kit for detecting the nucleotide polymorphism of the target gene containing the PNA probe. It is characterized that the PNA probe according to the present invention contains negative charge molecules. The modified PNA probe according to the present invention contains the negative charge molecules to have a high recognition ability with respect to a target DNA and a high coupling ability to the target DNA and to be rapidly dissociated by heat, such that the nucleotide polymorphism analysis may be relatively easily performed even in a heterozygous sample showing two melting curve graphs, and two or more adjacent single nucleotide polymorphisms may be simultaneously analyzed.

Abstract: A method of programming target memory cells of a nonvolatile memory device includes; programming the target memory cells using an incrementally adjusted program time, reading a code word stored by the target memory cells and determining a bit error rate (BER) associated with the target memory cells in view of the read code word, and if the BER exceeds an upper BER limit, increasing the program time by a unit time.

Abstract: In a method of reading a memory device, difference information is generated based on a distance difference between a position of a read word-line and a position of a boundary word-line. The read word-line corresponds to a read address. The boundary word-line corresponds to a last programmed word-line in a memory block included in a memory cell array. A read word-line voltage and an adjacent word-line voltage are determined based on the difference information. The read word-line voltage is applied to the read word-line. The adjacent word-line voltage is applied to an adjacent word-line that is adjacent to the read word-line. A read data corresponding to the read address is outputted based on the read word-line voltage and the adjacent word-line voltage.

Abstract: A parking assistance system and a method for controlling the same are disclosed. The parking assistance system includes a parking-mode input unit, a parking-associated functioning unit having a plurality of parking-associated systems, a setting unit for selecting parking-associated systems that are operated, and a controller configured to control the respective parking-associated systems by receiving an input signal through the parking-mode input unit. The method for controlling the parking assistance system includes transmitting a parking-mode input signal by turning on a parking-mode input unit, recognizing that a parking action is ready to be executed through the parking-mode input signal, and controlling a set of parking-associated functioning units according to a predetermined condition stored in a setting unit.

Abstract: A method of operating a non-volatile memory device including first buffer memory cells and main memory cells, where the first buffer memory cells store first data, the main memory cells store second data, which is read from the first buffer memory cells, or recovered first data, which is recovered from the second data through a correction process, includes reading data, which is stored in sample buffer memory cells included in the first buffer memory cells, as sample data when an accumulated number of read commands, which are executed on the non-volatile memory device, reaches a reference value. The method includes counting the number of errors included in the sample data based an error correction code, and determining whether the main memory cells store the second data or the recovered first data based on the number of the errors relative to the first threshold value.

Abstract: In a method of optimizing a log likelihood ratio (LLR) used to correct errors related to data stored in a nonvolatile memory device, variation of threshold voltage distribution for a plurality of memory cells included in the nonvolatile memory device is monitored, and the LLR for the memory cells is updated based on a monitoring result. Although the characteristics of the memory cells are deteriorated, the LLR is continuously maintained to the optimal value.

Abstract: In a method of reading a memory device, difference information is generated based on a distance difference between a position of a read word-line and a position of a boundary word-line. The read word-line corresponds to a read address. The boundary word-line corresponds to a last programmed word-line in a memory block included in a memory cell array. A read word-line voltage and an adjacent word-line voltage are determined based on the difference information. The read word-line voltage is applied to the read word-line. The adjacent word-line voltage is applied to an adjacent word-line that is adjacent to the read word-line. A read data corresponding to the read address is outputted based on the read word-line voltage and the adjacent word-line voltage.

Abstract: To control a read sequence of a nonvolatile memory device, a plurality of read sequences are set and the read sequences respectively correspond to operating conditions different from each other. The read sequences are performed selectively based on sequence selection rates respectively corresponding to the read sequences. Read latencies of the respective read sequences are monitored and the sequence selection rates are adjusted based on monitoring results of the read latencies.

Abstract: The present invention provides a communication recovery method using an isolator in a communication system through a power line of land and marine equipment, wherein the method promptly senses situations, such as a disconnection or a short-circuit of a communication line, and restores the communication line for sensing and warning fire or gas in a larger sized space such as an inside/outside of a ship and an inside/outside of a plant or a building.