Abstract: The present invention provides a novel photolithography processes using photoresist pattern having at least two areas which has different thickness from each other for a fabrication method for a liquid crystal display device having reversed staggered and channel-etched type thin film transistors, reduce a number of photolithography processes required for whole of the fabrication process of the liquid crystal display device, and improve brightness of the liquid crystal display device.

Abstract: There is provided a TFT liquid crystal display device in which the adhesion strength of a sealing material is high and the reliability of its terminals is high. In a peripheral area of the liquid crystal display device, an organic protective film underlying the area of the sealing material is collectively removed together with an inorganic protective film, and video signals are respectively led from drain lines of a display area in such a manner that the respective drain lines are temporarily connected to gate lines underlying an insulating film under the sealing material.

Abstract: A pair of electrodes which constitute an upper layer and a lower layer with respect to an interlayer insulation film are formed as different layers at respective pixel regions on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other in an opposed manner by way of liquid crystal. At two pixel regions which are selected from the respective pixel regions, the height of background layers on which the electrodes which constitute the lower layers with respect to the interlayer insulation films are formed differs with respect to a surface of one substrate. The film thickness of the interlayer insulation film is set small with respect to the high background layer out of respective background layers which differ in height and is set large with respect to the low background layer out of respective background layers which differ in height.

Abstract: In a TFT type liquid crystal display device comprising first and second transparent substrates and a liquid crystal layer which is sandwiched between the first and second substrates, the first substrate includes a plurality of video signal lines, a plurality of scanning signal lines and a plurality of pixel regions which are formed as regions surrounded by the video signal lines and the scanning signal lines, each pixel region includes at least one active element, one pixel electrode and one common electrode, and color filter layers are formed between the pixel electrodes and the liquid crystal layer. The liquid crystal display device is substantially characterized in that the common electrodes are formed as layers above the color filters, the pixel electrodes are formed as layers below the color filters, and the color filters are superposed at least on the whole surfaces of the pixel electrodes in the pixel region.

Abstract: An active matrix type liquid crystal display device includes, in each pixel, a semiconductor layer of a thin film transistor, a first insulating film formed on the semiconductor layer, a gate line formed on the first insulating film, a second insulating film formed on the gate line, and a drain line formed on the second insulating film. The bottom side of the gate line is opposed to the semiconductor layer with the first insulating film interposed therebetween, and the top side of the gate line is covered with a metal electrode formed on the second insulating film by the same process as used to form the drain line, whereby leakage electric fields from the gate line are shielded. Particularly when an IPS type liquid crystal display device using low temperature poly silicon TFTs is constructed in the above-described manner, a wide viewing angle and a bright display image are obtained.

Abstract: The present invention provides a display device which includes signal lines which are formed on an upper surface side of a substrate, an insulation film which is formed such that the film covers the signal lines except for terminal portions of the signal lines, and conductive layers which extend in the extension direction of the signal lines such that the terminal portions traverse the terminal portions. In such a display device, gaps are formed between respective sides of the conductive layer parallel to the extension direction of the conductive layer and the insulation film and holes are formed in the signal lines at portions corresponding to the gaps along the extension direction of the signal lines.

Abstract: Below a transparent pixel electrode, an opaque pixel electrode is arranged while sandwiching an insulation film between the transparent pixel electrode and the opaque pixel electrode. A common electrode is arranged below the opaque pixel electrode thus forming a holding capacitance between the common electrode and an opaque metal electrode. In case when the pixel is divided into four or more portions, an interval between the pixel electrode and the common electrode is set to an unequal pitch size or an unequal electrode width within one pixel.

Abstract: In a liquid crystal display device, a counter electrode CT is arranged above and is overlapped to a drain line DL by way of an insulation layer, wherein a width of the counter electrode CT is set larger than a width of the drain line DL, and a recessed groove AL is formed between an end periphery of the counter electrode CT and the drain line DL along the extending direction of the counter electrode CT and the drain line DL.

Abstract: An active matrix type liquid crystal display device includes semiconductor layers made of thin film transistors which are formed over a first substrate, a first insulation film formed over the semiconductor layers, a second insulation film formed over the first insulation film, and common lines formed over the second insulation film. The second insulation film includes regions where the film is removed which are positioned where the semiconductor layers are formed. Holding capacitance is formed by a common potential supplied from the common lines in the film-removed regions together with the pixel potential formed by the semiconductor layers.

Abstract: A pair of electrodes which constitute an upper layer and a lower layer with respect to an interlayer insulation film are formed as different layers at respective pixel regions on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other in an opposed manner by way of liquid crystal. At two pixel regions which are selected from the respective pixel regions, the height of background layers on which the electrodes which constitute the lower layers with respect to the interlayer insulation films are formed differs with respect to a surface of one substrate. The film thickness of the interlayer insulation film is set small with respect to the high background layer out of respective background layers which differ in height and is set large with respect to the low background layer out of respective background layers which differ in height.

Abstract: The present invention provides a novel photolithography processes using photoresist pattern having at least two areas which has different thickness from each other for a fabrication method for a liquid crystal display device having reversed staggered and channel-etched type thin film transistors, reduce a number of photolithography processes required for whole of the fabrication process of the liquid crystal display device, and improve brightness of the liquid crystal display device.

Abstract: Below a transparent pixel electrode, an opaque pixel electrode is arranged while sandwiching an insulation film between the transparent pixel electrode and the opaque pixel electrode. A common electrode is arranged below the opaque pixel electrode thus forming a holding capacitance between the common electrode and an opaque metal electrode. In case when the pixel is divided into four or more portions, an interval between the pixel electrode and the common electrode is set to an unequal pitch size or an unequal electrode width within one pixel.

Abstract: An active matrix type liquid crystal display device according to the invention includes in each pixel a semiconductor layer of a thin film transistor, a first insulating film formed on the semiconductor layer, a gate line formed on the first insulating film, a second insulating film formed on the gate line, and a drain line formed on the second insulating film. The bottom side of the gate line is opposed to the semiconductor layer with the first insulating film interposed therebetween, and the top side of the gate line is covered with a metal electrode formed on the second insulating film by the same process as the drain line, whereby leak electric fields from the gate line are shielded. Particularly in an IPS type liquid crystal display device using low temperature poly silicon TFTs is constructed in the above-described manner, a wide viewing angle and a bright display image are obtained.

Abstract: In a liquid crystal display device of the active matrix type using the in-plane switching (IPS) scheme with at least four transmission regions being formed within a single pixel area surrounded by neighboring gate wiring lines and neighboring drain wiring lines in a direction transverse to the drain wiring lines, the present invention makes use of a multilayer structure of two layers of conductive films with an insulating film sandwiched therebetween at a pixel electrode extending from either one of the neighboring gate wiring lines toward the pixel inside and causes one of these two-layer conductive films (i.e.

Abstract: A display device such as liquid crystal display device which restrains the entrance of static electricity into a scanning signal driver circuit or a video signal driver circuit includes a pair of substrates, a signal line, a capacitance line and a counter voltage line formed on one substrate of the pair of substrate, a pixel including a thin film transistor connected to the signal line, a pixel electrode connected to the thin film transistor and a counter electrode connected to the counter voltage line, a driver circuit formed on the one substrate and connected to the signal line and an interconnection layer disposed between the pixel and the driver circuit. At least one of the capacitance line and the counter voltage line is connected to the interconnection layer between the driver circuit and the pixel.

Abstract: An active matrix type liquid crystal display device includes semiconductor layers made of thin film transistors which are formed over a first substrate, a first insulation film formed over the semiconductor layers, a second insulation film formed over the first insulation film, and common lines formed over the second insulation film. The second insulation film includes regions where the film is removed which are positioned where the semiconductor layers are formed. Holding capacitance is formed by a common potential supplied from the common lines in the film-removed regions together with the pixel potential formed by the semiconductor layers.

Abstract: A liquid crystal display device includes at least a common electrode line, a common electrode and a pixel electrode in each pixels, the common electrode line comprising a first common electrode line which extends in the extending direction of the gate lines and a second common electrode line which extends in the extending direction of the drain lines in the pixel region, the first common electrode line and the second common electrode line are spaced apart from each other by way of a first insulating film, the first common electrode line and the second common electrode line are connected via an opening portion formed in the first insulating film, and a second insulating film is formed over the opening portion.

Abstract: There is provided a TFT liquid crystal display device in which the adhesion strength of a sealing material is high and the reliability of its terminals is high. In a peripheral area of the liquid crystal display device, an organic protective film underlying the area of the sealing material is collectively removed together with an inorganic protective film, and video signals are respectively led from drain lines of a display area in such a manner that the respective drain lines are temporarily connected to gate lines underlying an insulating film under the sealing material.

Abstract: In a liquid crystal display device, a capacitance element uses a semiconductor layer as one electrode and is formed between the semiconductor layer and a storage capacitance line with an insulating film interposed therebetween, and a voltage which constantly brings a MOS type transistor into an ON state is applied to the storage capacitance line.

Abstract: Below a transparent pixel electrode, an opaque pixel electrode is arranged while sandwiching an insulation film between the transparent pixel electrode and the opaque pixel electrode. A common electrode is arranged below the opaque pixel electrode thus forming a holding capacitance between the common electrode and an opaque metal electrode. In case when the pixel is divided into four or more portions, an interval between the pixel electrode and the common electrode is set to an unequal pitch size or an unequal electrode width within one pixel.